Method for producing straightly-pulled heavily-doped ultralow-resistivity silicon monocrystal

A very low resistance, silicon single crystal technology, applied in the direction of single crystal growth, single crystal growth, chemical instruments and methods, etc. The resistivity of single crystal is not involved, so as to reduce the cost of single crystal, reduce the probability of bad loss, and reduce the resistivity of single crystal silicon

Inactive Publication Date: 2015-08-12
TIANJIN HUANOU SEMICON MATERIAL TECH CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] A doping method disclosed in Chinese patent CN1556255A, its main feature is only that the doping efficiency is improved through funnel doping, but the resistivity of the single crystal after doping does not involve
However, the disadvantages of existing heavy-doped low-resistance single crystals are: first, heavy doping is easy to volatilize, and the volatilization of dopants during the growth of single crystals makes the re-doped resistivity reverse, and it is not easy to obtain extremely low-resistance heavy-doped single crystals. ; Second, by increasing the doping to reduce the resistivity of the head, the crystal formation will be greatly affected; third, the axial resistivity of silicon single crystal decays faster

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0022] Material requirements: 5-inch crystal direction, low resistance and heavily doped with arsenic, resistivity requirement: 0.002-0.003Ω.cm;

[0023] The steps are: after dismantling and cleaning the furnace, put heavily arsenic-doped single crystal tailings (resistivity 0.003) as raw materials into a quartz crucible, and other evacuation and chemical materials are carried out according to the normal procedure of Czochralski silicon; when doping, press Doping with 5g / kg, switching the blast furnace pressure parameters (executed at 30torr higher than the crystal pulling furnace pressure) during doping, baking for 1 hour, and then stabilizing the temperature for 1.5 hours to start the crystal pulling step: stabilizing temperature - seeding - shoulder expansion -Keep. When the crystal remains stable, gradually increase the furnace pressure to 35torr-100torr until the equal-diameter growth is completed, and then stop the furnace at the end. The resistivity of the obtained si...

Embodiment 2

[0025] Material requirements: 5-inch crystal direction, low resistance and heavily doped with antimony, resistivity requirement: 0.007-0.014Ω.cm

[0026] The steps are: after the furnace is disassembled, the primary polycrystalline material and the heavily antimony-doped single crystal tailing (resistivity 0.025) are used as raw materials in a ratio of 1:1, and put into a quartz crucible, and other evacuated and chemical materials are used as Czochralski. Silicon is carried out in the normal procedure; when doping, the doping is carried out according to the doping 6g / kg, and the blast furnace pressure parameter (executed at 40 torr higher than the crystal pulling furnace pressure) is switched to bake for 3 hours during doping, and then the temperature is stabilized for 2 hours, when the temperature After stabilization, start the steps of temperature stabilization crystal pulling: temperature stabilization - seeding - shoulder expansion - maintenance. When the crystal remains ...

Embodiment 3

[0028] Material requirements: 6-inch grain heavily doped with phosphorus, resistivity requirement 0.0008-0.0016Ω.cm

[0029] The steps are: after the furnace is disassembled, the primary polycrystalline material and the heavily phosphorus-doped single crystal tailing (resistivity 0.002) are used as raw materials in a ratio of 1:1, and put into a quartz crucible. Silicon is carried out in the normal procedure; when doping, the doping is carried out according to the doping 4g / kg, and the blast furnace pressure parameter (executed at 40 torr higher than the crystal pulling furnace pressure) is switched to bake for 2 hours during doping, and then the temperature is stabilized for 1 hour, and the temperature is stabilized During the process, the argon gas is changed to a mixed gas of argon and phosphine (phosphine volume fraction 0.001%), and when the temperature is stable, the temperature-stabilized crystal pulling step is started: temperature stabilization-seeding-shoulder expans...

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Abstract

The invention provides a method for producing a straightly-pulled heavily-doped ultralow-resistivity silicon monocrystal. The method includes combining heavily-doped monocrystal head tailings (with certain resistivity) with protogenic polycrystal materials according to a certain ratio; performing doping according to normal doping quantity after mixing, switching blast furnace pressure parameters for baking during doping to enable dopants to be fused into melts quickly, starting crystal pulling after normal furnace pressure is stable, injecting argon mixed gas during crystal growth, and increasing partial pressure of the dopants in a furnace; when the monocrystal is kept and grows stably, increasing the furnace pressure gradually to further reduce volatilization of the dopants and resistivity. The method has the advantages that monocrystal cost is reduced through the heavily-doped monocrystal head tailings, head total resistivity can be reduced by 5-25% without addition of first doping amount, monocrystal silicon resistivity is reduced obviously without influence on monocrystal forming rate, resistivity reflex action is suppressed and axial uniformity of the resistivity is improved.

Description

technical field [0001] The invention relates to a production method of silicon single crystal, in particular to a method for producing Czochralski heavy doped silicon single crystal with extremely low resistivity. Background technique [0002] Heavily doped monocrystalline silicon is mainly used in power semiconductor devices. With the development of "4C industries" such as communication, computer, consumer electronics and automobiles, the application range of power semiconductor devices is becoming wider and wider, and has become the foundation of the major pillar industries of the national economy. . [0003] Since power semiconductor devices usually work under high current conditions, and the current flows vertically through the device, the silicon chip as the substrate will consume part of the power when the device is in the on state. In order to reduce this part of power to the greatest extent, it is required to reduce the resistivity of the silicon substrate to reduc...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C30B15/04C30B29/06
Inventor 娄中士朱鹏浩李亚哲张颂越郑海峰刘一波
Owner TIANJIN HUANOU SEMICON MATERIAL TECH CO LTD
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