A cleaning method of gadolinium gallium garnet single crystal substrate for liquid phase epitaxy

A technology of gadolinium gallium garnet and liquid phase epitaxy, which is applied in the field of cleaning of gadolinium gallium garnet single crystal substrates, can solve problems such as unfavorable growth of high-quality thin films, expansion of substrate stress, substrate fragmentation, etc., and achieve reduction Effects of defects and stress, improvement of film formation rate, and improvement of film quality

Inactive Publication Date: 2017-08-11
UNIV OF ELECTRONICS SCI & TECH OF CHINA
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Problems solved by technology

However, this method does not activate the surface of the substrate, which is not conducive to the subsequent growth of high-quality thin films; and for larger substrates, the ultrasonic cleaning method may increase the stress inside the substrate, resulting in cracking of the substrate

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  • A cleaning method of gadolinium gallium garnet single crystal substrate for liquid phase epitaxy

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Embodiment

[0025] A method for cleaning a gadolinium gallium garnet single crystal substrate for liquid phase epitaxy, comprising the following steps:

[0026] Step 1: soak the gadolinium gallium garnet single crystal substrate in trichlorethylene at 80°C for 5 minutes to remove organic impurities on the surface of the substrate, and then soak the taken-out substrate in deionized water at 80°C for 5 minutes to remove Trichlorethylene on the surface and impurities in soluble water;

[0027] Step 2: Prepare a mixture of potassium dichromate, concentrated sulfuric acid and water: accurately weigh 19.8g of potassium dichromate and add it to the beaker, then slowly add 100mL of concentrated sulfuric acid to the beaker, stirring continuously during the addition until most of the heavy After potassium chromate dissolves, add 100mL of vitriol oil again, continue to stir heat dissipation, stop until adding 660mL vitriol oil; Then slowly add above-mentioned potassium dichromate acid solution into ...

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Abstract

The invention provides a method for cleaning a gadolinium gallium garnet single crystal substrate for liquid phase epitaxy. Firstly, the substrate is soaked and cleaned in trichlorethylene and deionized water at 70-80°C respectively; Soak in the mixture of potassium dichromate, concentrated sulfuric acid and water for 10 to 15 times, each time for 1 to 2 seconds. Soak and clean in lye and deionized water at 70-80°C; soak and clean in weak alkali and deionized water in turn; finally clean in isopropanol vapor. The present invention can effectively remove impurities and stains on the surface of the substrate, so that the substrate presents a mirror effect; the surface of the substrate is slightly corroded by the cleaning liquid, the crystal bond of the substrate is opened, and the surface is activated, which is beneficial to the adhesion and maintenance of various film-forming raw materials. Growth, improve the film formation rate and film quality; use immersion cleaning to avoid the stress problem caused by ultrasonic cleaning of larger substrates.

Description

technical field [0001] The invention relates to a cleaning method for a gadolinium gallium garnet substrate, in particular to a cleaning method for a gadolinium gallium garnet single crystal substrate used for liquid phase epitaxy. Background technique [0002] In the film growth process, the cleanliness of the substrate has a crucial impact on the quality of the film. Poor surface cleanliness will lead to problems such as the inability to form a film on the surface of the substrate or poor adhesion of the film. In the process of preparing garnet thin films by liquid phase epitaxy, the surface cleanliness of the common substrate gadolinium gallium garnet (GGG) single crystal substrate is also very high, because the liquid phase epitaxy growth temperature is high and the growth process temperature Substrates with large changes and poor cleanliness will have greater stress, resulting in substrate fragmentation and raw material contamination. In addition, since the liquid phas...

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C30B29/28C30B19/12
Inventor 杨青慧饶毅恒张怀武田晓洁范仁钰金曙晨梅兵
Owner UNIV OF ELECTRONICS SCI & TECH OF CHINA
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