Preparation method of ultra-fast-flickering ZnO film

A thin-film, ultra-fast technology, applied in the field of materials science, can solve the problems of poor crystal quality and orientation, low luminescence intensity of excitons and defects in the film, and achieve strong ultra-fast decay performance, low cost, and improved crystal orientation. Effect

Inactive Publication Date: 2015-09-16
SHANGHAI INST OF TECH
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Problems solved by technology

[0005] Aiming at the above-mentioned technical problems in the prior art, the present invention provides a method for preparing an ultrafast flashing ZnO thin film, which solves the problems caused by the mismatch between the substrate and the thin film. Poor crystal quality and orientation, and low ratio of exciton and defect luminescence intensity in the thin film

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  • Preparation method of ultra-fast-flickering ZnO film
  • Preparation method of ultra-fast-flickering ZnO film
  • Preparation method of ultra-fast-flickering ZnO film

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Embodiment 1

[0019] A method for preparing an ultra-fast flashing ZnO thin film, specifically comprising the steps of:

[0020] (1) Calculated by volume ratio, the ratio of concentrated sulfuric acid: concentrated phosphoric acid is 3:1. After mixing concentrated sulfuric acid and concentrated phosphoric acid, the resulting mixed acid is heated to a temperature of 160°C, and a single crystal silicon wafer is placed in it. Keep the temperature at 160°C for 20 minutes, then cool naturally, pour out the mixed acid, and finally take out the monocrystalline silicon wafer, firstly clean it with alcohol, then perform ultrasonic cleaning, and finally blow dry to obtain the acid-treated monocrystalline silicon wafer sheet; the mass percent concentration of the concentrated sulfuric acid is 95-98%, and the concentrated phosphoric acid is an aqueous phosphoric acid solution with a mass percent concentration of 85%;

[0021] (2) The single crystal silicon wafer processed according to the above step (1...

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Abstract

The invention relates to a preparation method of an ultra-fast-flickering ZnO film, which comprises the following steps: acid treatment on monocrystalline silicon wafer: measuring concentrated sulfuric acid and concentrated phosphoric acid, mixing the concentrated sulfuric acid and concentrated phosphoric acid, heating, putting the monocrystalline silicon wafer into the acid mixture, keeping the temperature for 10-40 minutes, naturally cooling, taking out the monocrystalline silicon wafer, cleaning with ethanol, carrying out ultrasonic cleaning, and carrying out blow-drying; and by using the treated monocrystalline silicon wafer as a substrate material, preparing a 40-60nm-thick ZnO film as a seed crystal layer on the substrate by a magnetron sputtering film deposition technique, and depositing a ZnO film on the ZnO seed crystal layer by an ultrasonic spray pyrolysis process, wherein the spray delivering carrier gas is N2, the deposition temperature is 370-390 DEG C, and the thickness of the ZnO film is 150-250nm. The ZnO film obtained by the method has the advantages of (002) preferred orientation characteristic, strong ultraviolet emission and ultra-fast flickering.

Description

technical field [0001] The invention belongs to the field of material science, in particular to a ZnO thin film, in particular to a preparation method of an ultrafast flashing ZnO thin film. Background technique [0002] Scintillation material is a crystalline energy converter that can convert incident high-energy rays (X / γ-rays) or particles into ultraviolet or visible light. It is widely used in high-energy physics and nuclear physics experiments, imaging nuclear medicine (CT and PET), industrial CT online detection, oil well exploration, safety inspection and other fields. In recent years, with the development of imaging nuclear medicine medical equipment and the increase in the demand for high-energy physics and nuclear physics experiments, the requirements for scintillators are getting higher and higher: large effective atomic number (favorable for high-energy ray absorption), higher Light output (increased signal strength), faster decay (enables real-time imaging, l...

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C30B29/16C30B23/02C30B25/02
CPCC23C18/1258
Inventor 张灿云邹军徐家跃孔晋芳王凤超杨波波李龙孙孪鸿
Owner SHANGHAI INST OF TECH
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