Gallium nitride base low leakage current cantilever beam switch class B push-pull power amplifier

A power amplifier, gallium nitride-based technology, applied in power amplifiers, push-pull amplifiers, improved amplifiers to improve efficiency, etc., can solve problems such as chip performance impact, and achieve the effect of reducing power consumption

Active Publication Date: 2015-09-23
SOUTHEAST UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Too high power consumption will put higher requirements on the heat dissipation material of the chip, and will also affect the performance of the chip

Method used

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  • Gallium nitride base low leakage current cantilever beam switch class B push-pull power amplifier
  • Gallium nitride base low leakage current cantilever beam switch class B push-pull power amplifier
  • Gallium nitride base low leakage current cantilever beam switch class B push-pull power amplifier

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Embodiment Construction

[0014] The GaN-based cantilever switch MESFET high quality factor class B push-pull power amplifier of the present invention consists of a first cantilever switch N-type MESFET1, a second cantilever switch N-type MESFET19, a third cantilever switch N-type MESFET20, and a cantilever switch P-type MESFET2 and LC loop form. The first cantilever switch N-type MESFET1, the second cantilever switch N-type MESFET19, and the third cantilever switch N-type MESFET20 used in the power amplifier are based on a GaN substrate, and its input lead 4 is made of gold, and the source 10 and drain The electrode 12 is composed of a metal and a heavily doped N region to form an ohmic contact, and the gate 5 is composed of a metal and an N-type active layer 11 to form a Schottky contact. A cantilever beam is suspended above the gate 5 of the cantilever switch N-type MESFET. Switch 6, the AC signal is loaded on the cantilever switch 6, the cantilever switch 6 is made of titanium / gold / titanium, the tw...

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Abstract

The invention relates to a gallium nitride base low leakage current cantilever beam switch class B push-pull power amplifier, comprising three cantilever beam switch N type metal semiconductor field effect transistors (MESFET), a cantilever beam switch P type MESFET, and an LC loop. The difference among the three cantilever beam switch N type MESFETs only lies in different shapes of the cantilever beam switches. The cantilever beam switch of the first cantilever beam switch N type MESFET (1) is a wide beam. The cantilever beam switches of the second cantilever beam switch N type MESFET (19) and the third cantilever beam swtich N type MESFET (20) are narrow beams. The cantilever beam switch MESFETs used by the power amplifier are based on GaN substrates, metal and a heavy doping N region form ohm contact so as to form a source electrode and a drain electrode, metal and a channel region form Schottky contact so as to form a gate electrode, the cantilever beam switches are suspended above the gate electrode of the MESFET, and an alternating current signal is loaded on the cantilever beam switch, so that the quality factor of the LC loop of the output end of the class B push-pull power amplifier is improved.

Description

technical field [0001] The invention provides a GaN (gallium nitride)-based low-leakage current cantilever beam switch MESFET (metal-semiconductor field effect transistor) class B push-pull power amplifier, which belongs to the technical field of micro-electromechanical systems. Background technique [0002] With the development of electronic technology, people need to output higher power in some electronic systems. For example, in home audio systems, it is often necessary to increase the power of audio signals to several watts to tens of watts. In a general multi-stage amplifying circuit, in addition to a voltage amplifying circuit, an amplifying circuit that provides power to the load is also required. Power amplifier circuits are divided into Class A, Class B and so on. In a Class A amplifier circuit, the power supply continuously delivers power to the load. The larger the signal, the more power delivered to the load. Even in an ideal state, the efficiency of the Class A...

Claims

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Application Information

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IPC IPC(8): H03F1/02H03F3/20H03F3/26
Inventor 廖小平王小虎
Owner SOUTHEAST UNIV
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