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A kind of polishing agent and polishing liquid with self-cleaning effect

A self-cleaning, polishing agent technology, applied in polishing compositions containing abrasives, polishing compositions, chemical instruments and methods, etc., can solve problems such as epitaxial film corrosion, increase surface activity, avoid adhesion, simplify The effect of the cleaning process

Active Publication Date: 2017-08-25
ZHENGZHOU RES INST FOR ABRASIVES & GRINDING CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0006] The purpose of the present invention is to provide a polishing agent with self-cleaning effect to solve the problem caused by the need to use acid and alkali to clean the polished epitaxial wafer after the existing polishing liquid performs chemical mechanical polishing on the sapphire-based LED epitaxial wafer. Corrosion of the epitaxial film layer

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0025] The polishing agent with self-cleaning effect of the present embodiment includes the following components in parts by weight: 20 parts of colloidal silicon dioxide with a particle size of 10 to 30 nm, 0.6 part of potassium hydroxide, 0.08 part of coconut acid diethanolamine condensate, surface Active agent 0.06 part. Wherein, the surfactant is a mixture of sodium lauryl sulfate and nonylphenol polyoxyethylene ether in a mass ratio of 1:1.

[0026] The polishing liquid with self-cleaning effect of the present embodiment contains the following components in mass percentage: 20% of colloidal silicon dioxide, 0.6% of potassium hydroxide, 0.08% of coconut acid diethanolamine condensate, surface active Agent 0.06%, the balance is water. Wherein, the surfactant is a mixture of sodium lauryl sulfate and nonylphenol polyoxyethylene ether in a mass ratio of 1:1.

[0027] The preparation method is as follows: take 1000 g of colloidal silicon dioxide, 30 g of potassium hydroxide,...

Embodiment 2

[0029] The polishing agent with self-cleaning effect of the present embodiment includes the following components in parts by weight: 40 parts of fumed silica with a particle size of 30 to 50 nm, 5 parts of tetramethylammonium hydroxide, and condensate of coconut acid diethanolamine 1 part, 0.5 part of surfactant. Wherein, the surfactant is a mixture of sodium lauryl sulfate and nonylphenol polyoxyethylene ether in a mass ratio of 3:1.

[0030] The polishing liquid with self-cleaning effect of the present embodiment contains the following components in mass percentage: particle size is 40% of fumed silicon dioxide of 30-50nm, 5% of tetramethylammonium hydroxide, 1% of coconut acid diethanolamine condensate , Surfactant 0.5%, balance is water. Wherein, the surfactant is a mixture of sodium lauryl sulfate and nonylphenol polyoxyethylene ether in a mass ratio of 3:1.

[0031] The preparation method is as follows: mix the fumed silicon dioxide, tetramethylammonium hydroxide, coco...

Embodiment 3

[0033] The polishing agent with self-cleaning effect of this embodiment includes the following components in parts by weight: 5 parts of precipitated silica with a particle size of 50-100 nm, 1 part of sodium hydroxide, 0.1 part of coconut acid diethanolamine condensate, Surfactant 0.01 part. Wherein, the surfactant is a mixture of sodium lauryl sulfate and nonylphenol polyoxyethylene ether in a mass ratio of 1:2.

[0034] The polishing liquid with self-cleaning effect of the present embodiment contains the following components in mass percentage: 5% of precipitated silicon dioxide, 1% of sodium hydroxide, 0.1% of coconut acid diethanolamine condensate, surface The active agent is 0.01%, and the balance is water. Wherein, the surfactant is a mixture of sodium lauryl sulfate and nonylphenol polyoxyethylene ether in a mass ratio of 1:2.

[0035]The preparation method is as follows: the polishing agent is obtained after mixing the precipitated silica, sodium hydroxide, coconut ...

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Abstract

The invention discloses a polishing agent and polishing liquid with a self-cleaning effect. The polishing agent comprises, by weight, 5-40 parts of silicon dioxide, 0.2-10 parts of alkaline compounds, 0.001-1 part of cocoanutfatty acid N, N-diethanol and 0.001-0.5 part of surfactants. The polishing agent and the polishing liquid have the advantages that the added cocoanutfatty acid N, N-diethanol in the polishing liquid can be adsorbed by the surfaces of organic matters and abrasive grains, and accordingly the surface activity of the organic matters and the abrasive grains can be greatly improved; the cocoanutfatty acid N, N-diethanol and other components are matched with one another, coordinating effects can be realized by the cocoanutfatty acid N, N-diethanol and the other components, and accordingly the self-cleaning effect can be realized by the polishing liquid; adhesion of the organic matters and the abrasive grains on the surfaces of epitaxial wafers can be greatly reduced and even can be completely prevented; the organic matters and the abrasive grains can be prevented from being adhered on the surfaces of the polished wafers, or only extremely few organic matters and abrasive grains can be adhered on the surfaces of the polished wafers, accordingly, the polished wafers do not need to be cleaned by the aid of acid or alkali in follow-up procedures, corrosion damage to epitaxial film layers can be prevented, cleaning procedures can be simplified, the cleaning cost can be saved, and the polishing agent and the polishing liquid are suitable for popularization and application.

Description

technical field [0001] The invention belongs to the technical field of wafer surface chemical mechanical polishing, in particular to a polishing agent with a self-cleaning effect, and also to a polishing liquid with a self-cleaning effect. Background technique [0002] Light-emitting diode (LED) is a solid-state device that can convert electrical energy into light energy. Its structure is mainly composed of PN junction chips, electrodes and optical systems. The basic working principle of LED is an electro-optic conversion process. When a forward bias voltage is applied to both ends of the PN junction, due to the reduction of the PN junction barrier, the positive charges in the P region will diffuse to the N region, and the electrons in the N region will also flow to the P region. The area diffuses, forming a non-equilibrium charge accumulation in both areas at the same time. Since the minority carriers generated by current injection are unstable, for the PN junction system,...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C09G1/02C09G1/18
CPCC09G1/02C09G1/18
Inventor 王乐军徐明艳代克周万里
Owner ZHENGZHOU RES INST FOR ABRASIVES & GRINDING CO LTD