ITO film etching solution for liquid crystal panel manufacturing process and preparation method thereof

Abstract

The invention discloses an ITO film etching solution for a liquid crystal panel manufacturing process. The ITO film etching solution comprises, by weight, 3.5-4.3% of oxalic acid, 0.2-0.8% of butyric acid, 1.2-2.6% of n-pentanoic acid, 1.2-2.6% of iodic acid, 15-20% of hydrochloric acid and the balance pure water. Through use of additives such as butyric acid, n-pentanoic acid, iodic acid and hydrochloric acid based on the original technology, ITO etching solution surface tension is effectively reduced, penetration and infiltration effects are produced, an indium tin oxide semiconductor transparent conductive film etching rate is moderate and a reaction is stable so that product etching effects are improved without influence on product quality, the product can be stored at a low environment temperature, incomplete etching produced by the original technology is avoided, and storage at a low temperature is realized. The ITO film etching solution is suitable for large scale production.

Description

technical field [0001] The invention relates to an ITO film etching solution in a liquid crystal panel manufacturing process and a preparation method thereof. Background technique [0002] ITO is the abbreviation of Indium Tin Oxides. As a nanometer indium tin oxide, it has good conductivity and transparency, and can cut off harmful electron radiation, ultraviolet rays and far infrared rays that are harmful to the human body. Therefore, indium tin oxide is usually sprayed on glass, plastic and electronic display screens, used as a transparent conductive film, and at the same time reduces harmful electron radiation and ultraviolet and infrared radiation. [0003] Etching is the technique of removing material using chemical reaction or physical impact. Etching techniques are divided into wet etching and dry etching. Among them, wet etching uses chemical reagents to achieve the purpose of etching through chemical reactions. Thin-film field-effect transistor liquid crystal di...

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Problems solved by technology

At present, the ITO etching solution is mainly composed of oxalic acid crystals and pure water. This product mainly has the following disadvantages: ①The surface tension of the oxalic acid-type ITO etching solution used by domestic manufacturers is about 70mN / m, and the wettability of the ITO layer is insufficient. , resulting in residual microcrystals after etching; ②It is easy to crystallize when it is lower than 5°C, and it needs to be transported with heat preservation during transportation, and the transportation cost is high; at the same time, it is easy for customers to cause filter blockage when using it, which will affect customer equipment and use

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