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Enhanced RF Inductively Coupled Plasma Discharge Device

A technology of radio frequency inductive coupling and plasma, which is applied in the direction of plasma, electrical components, etc., can solve the problem that the plasma density is difficult to reach a high level, and achieve the effect of increasing the plasma density, increasing the discharge pressure range, and reducing the jump point

Active Publication Date: 2017-08-25
HARBIN INST OF TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0006] The purpose of the present invention is to solve the problem that the plasma density is difficult to reach a high value due to the weak collision of the existing ICP discharge device, and provides an enhanced radio frequency inductively coupled plasma discharge device. high density, large area, uniform and stable plasma device

Method used

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  • Enhanced RF Inductively Coupled Plasma Discharge Device
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  • Enhanced RF Inductively Coupled Plasma Discharge Device

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specific Embodiment approach 1

[0021] Specific implementation mode one: the following combination Figure 1 to Figure 5 Describe this embodiment mode, the enhanced radio frequency inductively coupled plasma discharge device described in this embodiment mode, it comprises upper end cover 1, lower end cover 2, cylindrical quartz glass tube 3, a plurality of long stem bolts 4, inner electrode coil 5 and outer Electrode coil 6;

[0022] The upper end cover 1, the lower end cover 2 and the cylindrical quartz glass tube 3 together form a vacuum chamber.

[0023] The outer part of the upper end cover 1 beyond the cylindrical quartz glass tube 3 is evenly distributed with a plurality of upper end installation holes 1-3 along the circumferential direction. The center position of the upper end cover 1 is provided with an inner coil installation hole 1-1. There is an air inlet 1-2, and the air inlet 1-2 communicates with the air chamber of the vacuum chamber;

[0024] The outer portion of the lower end cover 2 beyon...

specific Embodiment approach 2

[0031] Embodiment 2: In this embodiment, Embodiment 1 is further described. Both the inner electrode coil 5 and the outer electrode coil 6 are made of hollow copper tubes.

[0032] A connection terminal is provided at both ends of the hollow copper tube of the inner electrode coil, which is used for connecting cold water and electrically connecting with an external control system. The two hollow copper electrodes have water channels inside to cool the discharge.

specific Embodiment approach 3

[0033] Embodiment 3: In this embodiment, Embodiment 1 is further described. The outside of the hollow copper tube is covered with a heat-shrinkable tube for insulation between tubes.

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Abstract

An enhanced radio-frequency inductively coupled plasma discharge device belongs to the application technology field of low-temperature plasma. The invention aims to solve the problem that the plasma density is difficult to reach a high value due to the weak collision of the existing ICP discharge device. The invention includes upper and lower end covers, a cylindrical quartz glass tube, a plurality of long rod bolts, inner electrode coils and outer electrode coils; the upper and lower end covers and the cylindrical quartz glass tube together constitute a vacuum chamber, and the outer edge of the upper end cover A plurality of upper mounting holes are evenly distributed along the circumferential direction, and inner coil mounting holes and air inlet holes are arranged; a plurality of lower mounting holes are evenly distributed along the circumferential direction on the outer edge of the lower end cover, and a measuring hole and a vacuuming hole are arranged to measure The holes are used to place probe-like measuring components; the vacuuming holes are connected to the vacuuming system through vacuum bellows; the outer surface of the cylindrical quartz glass tube is provided with an external electrode coil; the inner electrode coil is provided inside the vacuum chamber, and Install at the mounting hole of the inner coil.

Description

technical field [0001] The invention relates to a large-area and stable plasma discharge reaction device which can be used for low-pressure generation, and belongs to the application technical field of low-temperature plasma. Background technique [0002] Material surface modification and surface treatment processes have been widely used in the global manufacturing industry. Traditional processes mainly include: thermal spraying, laser surface modification, electroplating, electroless plating and chemical transfer film, all of which have made great progress. develop. However, for some materials with special structures and special properties, for example, in the processing of ultra-large-scale integrated circuit manufacturing processes, it is required to etch nano-scale groove widths on large-area wafers, and with the increasing technical requirements, more and more Thin etch line width is difficult to achieve with traditional techniques. Therefore, a new process technology...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H05H1/46
Inventor 聂秋月韩雪张仲麟王志斌孔繁荣
Owner HARBIN INST OF TECH