High-toughness silicon carbide ceramic and low-temperature sintering technology thereof

A silicon carbide ceramic and low-temperature sintering technology, which is applied in the field of high-toughness silicon carbide ceramic and its low-temperature sintering process, can solve the problem that hot-pressed sintered ceramics are difficult to achieve large-scale production, industrialization and large-scale production cannot be realized, and hot-pressed products have a single shape, etc. To achieve the effect of saving sintering energy, improving homogenization efficiency and density, and high production efficiency

Inactive Publication Date: 2015-10-21
NINGBO DONGLIAN MECHANICAL SEAL
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The temperature of hot-press sintering needs to be above 2000°C. The structure of hot-press equipment is complex, expensive, and difficult to control; the shape of hot-pressed products is single, and it is difficult to realize large-scale production of hot-pressed sintered ceramics. The production efficiency is low, the product scrap rate is high, and the energy consumption is high. , the technical requirements for equipment are very high, which directly leads to high production costs
However, hot pressing and hot isostatic pressing technology are only a research method for people to explore new materials, and basically cannot realize industrialization and large-scale production.

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0032] In this embodiment, the raw materials of the ceramics are composed of 100 parts of α-silicon carbide; 0.3 parts of boron carbide; 5 parts of YAG powder, wherein the particle size of YAG powder is D50≤6.0 microns, and the above raw materials are mixed and ball milled, spray dried, and dry pressed After molding, low-temperature sintering and other processes, sintered ceramics are obtained.

[0033]Among them, the low-temperature sintering is sintering under the protection of argon in a high-temperature vacuum furnace. The sintering temperature is 1875°C. After the temperature in the furnace reaches the sintering temperature, the heat preservation and sintering time is 1.3h. Argon is charged when the high-temperature vacuum furnace is preheated to 1500°C.

[0034] In this embodiment, a ceramic sample 100 was prepared, and the pass rate of the sintered product was 99%. After testing, the average density of the sample was greater than 98%, and the fracture toughness was less ...

Embodiment 2

[0036] In this embodiment, the raw materials of the ceramics are composed of 100 parts of α-silicon carbide; 0.7 parts of boron carbide; 3 parts of YAG powder, wherein the particle size of YAG powder is D50≤6.0 microns, and the above raw materials are mixed and ball milled, spray-dried, and dry-pressed. After molding, low-temperature sintering and other processes, sintered ceramics are obtained.

[0037] Among them, the low-temperature sintering is sintering under the protection of argon in a high-temperature vacuum furnace. The sintering temperature is 1860°C. After the temperature in the furnace reaches the sintering temperature, the heat preservation and sintering time is 1.8h.

[0038] In this embodiment, a ceramic sample 100 was prepared, and the pass rate of the sintered product was 99%. After testing, the average density of the sample was greater than 98%, and the fracture toughness was less than 4.5MPA.

Embodiment 3

[0040] In this embodiment, the raw materials of the ceramics are composed of 100 parts of α-silicon carbide; 1.0 parts of boron carbide; 10 parts of YAG powder, wherein the particle size of YAG powder is D50≤6.0 microns, and the above raw materials are mixed and ball milled, spray-dried, and dry-pressed After molding, low-temperature sintering and other processes, sintered ceramics are obtained.

[0041] Among them, the low-temperature sintering is sintering under the protection of argon in a high-temperature vacuum furnace. The sintering temperature is 1870°C. After the temperature in the furnace reaches the sintering temperature, the heat preservation and sintering time is 1.3h.

[0042] In this embodiment, a ceramic sample 100 was prepared, and the pass rate of the sintered product was 99%. After testing, the average density of the sample was greater than 98%, and the fracture toughness was less than 4.5MPA.

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Abstract

The invention discloses high-toughness silicon carbide ceramic and a low-temperature sintering technology thereof. The high-toughness silicon carbide ceramic comprises, by weight, 100 parts of alpha-silicon carbide, 0.3-1.2 parts of boron carbide and 3-10 parts of YAG powder, wherein the granularity D50 of the YAG powder is smaller than or equal to 6.0 micrometers. Silicon carbide potteries obtained through the sintering technology are good in structural compactness, high in fracture toughness and lower in sintering temperature compared with the prior art, so that better operability and production convenience are achieved, the production cost of products is lowered, and production energy consumption is saved.

Description

technical field [0001] The invention relates to a ceramic material and a preparation method thereof, in particular to a high-toughness silicon carbide ceramic and a low-temperature sintering process thereof. Background technique [0002] Boron carbide (B4C) is a non-fixed stoichiometric covalent bond compound with an open polymorphic crystal structure. Its specific gravity is light, its strength is high, its hardness is second only to diamond and cubic boron nitride, its melting point is high, and its neutron absorption is strong. The above characteristics make boron carbide ceramics a potentially important structural candidate material, especially suitable for light armor and nuclear reactor shielding materials. Boron carbide is a material with excellent performance, but because of its covalent bond structure, its self-diffusion coefficient is small, and sintering is extremely difficult. Most traditional boron carbide ceramics are obtained by hot pressing, hot isostatic p...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C04B35/565C04B35/64
Inventor 李友宝励永平
Owner NINGBO DONGLIAN MECHANICAL SEAL
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