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A Method for Optimizing the Homoepitaxial Growth of Single Crystal Diamond Using Plasma Baffles

A technology of single crystal diamond and plasma, which is applied in the direction of single crystal growth, single crystal growth, crystal growth, etc., can solve the problems of polluting the cabin and the low quality of the lateral growth area, so as to ensure quality, reduce adhesion and deposition, The effect of increasing the growth rate

Active Publication Date: 2017-08-25
九桓碳构(威海)新材料有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0006] The present invention aims to solve the problems of the influence of the plasma density on the growth quality of the seed crystal in the existing MWCVD growth system, the low quality of the lateral growth area caused by the contact mode of the plasma form and the seed crystal, and the pollution of the cabin by carbon source deposition in the plasma. , while providing a method for optimizing the homoepitaxial growth of single crystal diamond using a plasma baffle

Method used

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  • A Method for Optimizing the Homoepitaxial Growth of Single Crystal Diamond Using Plasma Baffles
  • A Method for Optimizing the Homoepitaxial Growth of Single Crystal Diamond Using Plasma Baffles
  • A Method for Optimizing the Homoepitaxial Growth of Single Crystal Diamond Using Plasma Baffles

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specific Embodiment approach 1

[0039] Specific implementation mode one: combine figure 1 , 9, 10, 11 and 12 specifically illustrate the present embodiment, a method for optimizing single crystal diamond homoepitaxial growth using a plasma baffle described in the present embodiment, specifically according to the following steps:

[0040] 1. Cleaning: cleaning the diamond seed crystal and the metal molybdenum substrate wafer to obtain the cleaned diamond seed crystal and the cleaned metal molybdenum substrate wafer;

[0041] 2. Welding: Weld the cleaned diamond seed crystal with gold foil on the cleaned metal molybdenum substrate disc to obtain a diamond seed crystal fixed on the metal molybdenum substrate disc;

[0042] 3. Place the sample:

[0043] Place the diamond seed crystal fixed on the metal molybdenum substrate wafer in the center of the base tray of the microwave plasma assisted chemical vapor deposition instrument;

[0044] 4. Place the plasma baffle:

[0045] The metal molybdenum plasma baffle...

specific Embodiment approach 2

[0058] Specific embodiment 2: The difference between this embodiment and specific embodiment 1 is that in step 1, the diamond seed crystal is cleaned, specifically according to the following steps: under the condition that the ultrasonic power is 200W~600W, the diamond seed crystal Washing in acetone for 3 minutes to 5 minutes, in deionized water for 3 minutes to 5 minutes, and in absolute ethanol for 3 minutes to 5 minutes, to obtain diamond seed crystals after washing. Others are the same as in the first embodiment.

specific Embodiment approach 3

[0059] Embodiment 3: The difference between this embodiment and Embodiment 1 or 2 is that in step 1, the metal molybdenum substrate wafer is cleaned, specifically according to the following steps: Under certain conditions, the metal molybdenum substrate wafers are sequentially cleaned in acetone for 3 minutes to 5 minutes, in deionized water for 3 minutes to 5 minutes, and in absolute ethanol for 3 minutes to 5 minutes to obtain the cleaned metal molybdenum substrate disks. Others are the same as in the first or second embodiment.

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Abstract

The invention provides a method for optimizing monocrystal diamond homoepitaxial growth by utilizing a plasma baffle. The invention relates to the method for optimizing monocrystal diamond homoepitaxial growth. The method in the invention is to solve the problems of affection of plasma density on seed crystal growth quality, low quality of lateral growing area due to plasma shapes and seed crystal contact manners, and pollution of a cabin body due to deposition of a carbon source in plasma in a conventional MWCVD growth system. The method comprises the following steps: step 1, cleaning; step 2, welding; step 3, sample placing; step 4, plasma baffle placing; step 5, preparation work before growth; and step 6, diamond growth, that is, the method for optimizing the monocrystal diamond homoepitaxial growth by utilizing the plasma baffle is completed. The method provided by the invention is used for optimizing the monocrystal diamond homoepitaxial growth by utilizing the plasma baffle.

Description

technical field [0001] The present invention relates to a method for optimizing the homoepitaxial growth of single crystal diamond. Background technique [0002] In recent years, large-size single crystal diamond and quasi-single crystal diamond have been widely used in precision machining, High-tech fields such as high-frequency communication, aerospace, and cutting-edge technology have gradually become the foundation, key, and even the only material solution. The traditional synthetic single crystal diamond adopts high temperature and high pressure (HPHT) method. The diamond prepared by this method contains more impurities, higher defect density, relatively poor quality, and smaller size, which is quite different from the requirements of related applications. Far, resulting in a narrow application range of HPHT diamond, in the downstream of the industry, low profits, and weak competitiveness. [0003] Compared with the HPHT method, the microwave plasma-assisted chemical ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C30B25/02C30B29/04
Inventor 朱嘉琦舒国阳代兵陈亚男杨磊王强王杨刘康赵继文孙明琪韩杰才
Owner 九桓碳构(威海)新材料有限公司
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