Solar cell taking fluorinated graphene as high-resistance layer and preparing method thereof

A technology of solar cells and fluorinated graphene, applied in circuits, photovoltaic power generation, electrical components, etc., can solve problems such as light transmittance limitation, and achieve the effects of convenient operation, good light transmission rate and high purity

Active Publication Date: 2015-10-21
XIAN JIAOTONG LIVERPOOL UNIV
View PDF3 Cites 5 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, taking the high-resistance layer as zinc oxide as an example, the effective thickness range of the zinc oxide film is 80-200nm, which is not conducive to the tunneli

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Solar cell taking fluorinated graphene as high-resistance layer and preparing method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0030] like figure 1 Shown, a kind of cadmium telluride thin film solar cell with fluorinated graphene thin film as high resistance layer, solar cell bottom layer is metal thin film layer 10, is provided with back contact layer 20 on metal thin film layer 10, on the back contact layer 20 is provided with an absorbing layer 30, the absorbing layer 30 material can be cadmium telluride, the window layer 40 is set on the absorbing layer 30, the material of the window layer 40 can be cadmium sulfide, and the window layer 40 is fluorinated graphene high The uppermost layer of the resistance layer 50 is a transparent conductive film layer 60 .

[0031] The thickness of the fluorinated graphene high resistance layer 50 is 0.34-20nm.

[0032] A method for preparing a cadmium telluride thin-film solar cell, using glass evaporated with a transparent oxide film layer (for example, indium tin oxide) as a substrate, and spin-coating the prepared fluorinated graphene on the substrate...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

PropertyMeasurementUnit
Thicknessaaaaaaaaaa
Login to view more

Abstract

The invention discloses a solar cell taking a fluorinated graphene film as a high-resistance layer. In the solar cell, the cell structure successively comprises a metal film layer as a back electrode, a back contact layer, an absorbing layer, a window layer, a fluorinated graphene high-resistance layer and a transparent conductive film layer from bottom to top. A fluorinated graphene film the thickness of which is 0.34nm to 20nm replaces a native oxide and is taken as the novel high-resistance layer, atom diffusion between different films can be reduced, the interface property is improved, a cell short circuit caused by a pinhole effect of the window layer film can be prevented, and cell efficiency is further improved. Compared with a traditional high-resistance layer, the thinner fluorinated graphene film is more conductive to a tunneling effect of electrons and transfer and collection of the electrons.

Description

technical field [0001] The invention relates to a new solar cell, in particular to a solar cell with a fluorinated graphene film as a high-resistance layer and a preparation method thereof. Background technique [0002] In recent years, graphene has attracted the attention of scientific researchers due to its unique two-dimensional nanostructure and excellent electrical and thermal properties. The functionalization of graphene produces graphene derivatives, broadening the broad application fields of graphene. Graphene derivatives include graphene oxide, hydrogenated graphene and fluorinated graphene. The new fluorinated graphene is usually prepared by hydrothermal method, physical exfoliation method or plasma method. On the surface of fluorinated graphene, fluorine atoms are combined with carbon atoms in the form of covalent bonds, which changes graphene from two-dimensional to three-dimensional structure, and also makes it complete the transformation from conductor to sem...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
IPC IPC(8): H01L31/0216H01L31/073
CPCH01L31/02167H01L31/02168H01L31/073Y02E10/543Y02P70/50
Inventor 吴京锦赵策洲赵胤超
Owner XIAN JIAOTONG LIVERPOOL UNIV
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap