Cross-coupled oscillator using gallium nitride-based clamped beam switches with low leakage current, and preparation method of cross-coupled oscillator

A switching cross-coupling, GaN-based technology, applied in power oscillators, coupling of optical waveguides, semiconductor/solid-state device components, etc., can solve problems such as the impact of chip performance, and achieve reduced power consumption and high electron mobility , the effect of gate leakage current reduction

Active Publication Date: 2015-10-21
SOUTHEAST UNIV
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Problems solved by technology

The oscillator works at a very high frequency, which will cause the power consumption problem of the chip to become more and more obvious. T

Method used

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  • Cross-coupled oscillator using gallium nitride-based clamped beam switches with low leakage current, and preparation method of cross-coupled oscillator
  • Cross-coupled oscillator using gallium nitride-based clamped beam switches with low leakage current, and preparation method of cross-coupled oscillator
  • Cross-coupled oscillator using gallium nitride-based clamped beam switches with low leakage current, and preparation method of cross-coupled oscillator

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[0043] The fixed-supported beam switch MESFET cross-coupled oscillator of the present invention is composed of a first fixed-supported beam switch MESFET and a second fixed-supported beam switch MESFET, an LC resonance circuit, and a constant current source. The MESFET of the cross-coupled oscillator is based on a GaN substrate. The bottom 3 is made, and the input lead 4 is made of gold. The gate 5 of the MESFET in the present invention forms a Schottky contact with the active layer, and a fixed beam 6 is designed above the gate 5. The two anchor regions 7 of the fixed beam 6 are fabricated on the semi-insulating GaN substrate 3. Two electrode plates 8 are designed under each fixed beam 6, and the upper part of the electrode plates is covered with a silicon nitride layer 9. The electrode plate 8 of each MESFET is grounded.

[0044] The cross-coupled oscillator of the present invention is based on a GaN substrate, and a clamped beam structure is designed above the gate of the ME...

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Abstract

The invention provides a cross-coupled oscillator using gallium nitride-based clamped beam switches with low leakage current, and a preparation method of the cross-coupled oscillator. The MESFET with the clamped beam switch is used to replace a traditional MESFET. A pull-down electrode of the clamped beam switch of the cross-coupled oscillator is grounded. The threshold voltages of the two clamped beam switch MESFETs are designed to be equal, and the threshold voltage of the clamped beam switch MESFET is equal to the pull-down voltage of the clamped beam of the clamped beam switch MESFET. When the voltage between the clamped beam and the pull-down electrode plate is more than the absolute value of the threshold voltage, the clamped beam switch is pulled down to the gate and is closely stuck with the gate. Simultaneously, the voltage between the gate and the source is more than the threshold voltage too, and the MESFET is broken over. When the voltage between the clamped beam switch and the pull-down electrode plate of the MESFET is less than the threshold voltage, the clamped beam switch is suspended above the gate and is cut off. The power consumption of the cross-coupled oscillator is reduced.

Description

technical field [0001] The invention provides a GaN (gallium nitride)-based low-leakage current solid-supported beam switch metal-semiconductor field-effect transistor (MESFET) cross-coupled oscillator, which belongs to the technical field of micro-electromechanical systems. Background technique [0002] With the rapid development of modern communications, high-stability and high-performance oscillators have become one of the key components that determine the performance of the system. Oscillators are used in a wide range of applications, such as microprocessors, cellular phones, and test equipment. Especially in military reconnaissance, radar, and communication fields, signal sources need to be used as carriers for increasingly complex baseband information. Higher requirements are placed on the stability of the oscillator. The oscillator works at a very high frequency, which will cause the power consumption problem of the chip to become more and more obvious. Too high powe...

Claims

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Application Information

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IPC IPC(8): H03B5/04B81B7/02
Inventor 廖小平王小虎
Owner SOUTHEAST UNIV
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