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Special polishing liquid suitable for gallium oxide substrate polishing and preparation method thereof

A substrate substrate, gallium oxide technology, applied in the direction of polishing compositions containing abrasives, etc., can solve the problems of strong acid and alkali resistance, no cleavage properties, etc., and achieve the effect of convenient cleaning

Active Publication Date: 2017-06-09
常熟耐素生物材料科技有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] At present, sapphire is widely studied in chemical mechanical polishing, and there are many patents for polishing liquid for sapphire. The matrix composition of sapphire is aluminum oxide, with a Mohs hardness of 9, strong acid and alkali resistance, and no cleavage property.

Method used

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  • Special polishing liquid suitable for gallium oxide substrate polishing and preparation method thereof
  • Special polishing liquid suitable for gallium oxide substrate polishing and preparation method thereof
  • Special polishing liquid suitable for gallium oxide substrate polishing and preparation method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0051] Dissolve 1 mass part of disodium edetate, 1.5 mass parts of sodium hydroxide and 1 mass part of triethanolamine in 47 mass parts of deionized water. After sodium oxide and triethanolamine are fully dissolved, then the octylphenol polyoxyethylene ether (10) of 0.5 mass parts and the defoamer of 0.1 mass parts are also dissolved in described deionized water, treat described surfactant and defoamer After the foaming agent was fully dissolved, the obtained mixed solution was slowly added dropwise to 50 parts by mass of the silica sol emulsion which was constantly being stirred, so as to prepare the polishing solution of the present invention.

[0052] The particle size of silicon dioxide in the silica sol emulsion is 15nm, and the mass concentration of silicon dioxide is 40%.

Embodiment 2

[0054] First, 1 mass part of tetrasodium edetate, 0.5 mass part of sodium hydroxide and 1 mass part of triethanolamine are dissolved in 47.5 mass parts of deionized water, and the disodium edetate, hydrogen After sodium oxide and triethanolamine are fully dissolved, then the octylphenol polyoxyethylene ether (10) of 0.5 mass parts and the defoamer of 0.1 mass parts are also dissolved in described deionized water, treat described surfactant and defoamer After the foaming agent was fully dissolved, the obtained mixed solution was slowly added dropwise to 50 parts by mass of the silica sol emulsion which was constantly being stirred, so as to prepare the polishing solution of the present invention.

[0055] The particle size of silicon dioxide in the silica sol emulsion is 15nm, and the mass concentration of silicon dioxide is 40%.

[0056] Using the polishing solution obtained in the above-mentioned preferred embodiment 1 and preferred embodiment 2 to carry out chemical mechanic...

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Abstract

The invention discloses a special polishing solution for gallium oxide substrate polishing and a preparation method thereof. The preparation method comprises the following steps: dissolving 1 part by mass of complexing agent, 0.5-1.5 parts by mass of pH regulator and 1 part by mass of pH stabilizer in 47-47.5 parts by mass of deionized water; after the complexing agent, pH regulator and pH stabilizer are sufficiently dissolved; dissolving 0.5 part by mass of surfactant and 0.1 part by mass of defoaming agent in the deionized water; and after the surfactant and defoaming agent are sufficiently dissolved, slowly and dropwisely adding the mixed solution into 50 parts by mass of continuously stirred silica sol emulsion. The polishing solution can be used for manufacturing a damage-free super-smooth super-clean gallium oxide substrate.

Description

technical field [0001] The invention relates to a special polishing liquid suitable for gallium oxide substrate polishing and a preparation method thereof, belonging to the technical field of polishing liquid production and preparation. Background technique [0002] At the "Japan 3rd LED and Organic EL Lighting Exhibition" held at the Ariake International Convention and Exhibition Center in Tokyo from January 16 to 18, 2013, Tamura Manufacturing Co., Ltd. and its subsidiary Guangbo Company exhibited the gallium oxide ( β-Ga2O3) white LED. The LED consists of a GaN-based semiconductor blue LED chip fabricated on a β-Ga2O3 substrate and uses phosphors in combination. The difference is that compared with the use of ordinary blue LED chips fabricated on a sapphire substrate, it is easier to increase the light output power. [0003] Since the research on gallium oxide single crystal growth has only been carried out at home and abroad in the past three years, the research on the...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C09G1/02
CPCC09G1/02
Inventor 黄传锦周海顾斌刘道标惠学芹吴进
Owner 常熟耐素生物材料科技有限公司
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