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Manufacturing method for high linear density EUV multilayer blazed grating

A technology of blazed gratings and multi-layer films, applied in the direction of diffraction gratings, optics, optical elements, etc., can solve the problems of low grating line density, low diffraction efficiency and low spectral resolution, increase the grating line density, and simplify complex processes , Improve the effect of diffraction efficiency and spectral resolution

Active Publication Date: 2015-11-18
SHANGHAI INST OF MICROSYSTEM & INFORMATION TECH CHINESE ACAD OF SCI +1
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0005] In view of the shortcomings of the prior art described above, the purpose of the present invention is to provide a method for preparing a high linear density EUV multilayer blazed grating, which is used to solve the problems of diffraction efficiency and The problem of low spectral resolution and low grating line density

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  • Manufacturing method for high linear density EUV multilayer blazed grating
  • Manufacturing method for high linear density EUV multilayer blazed grating
  • Manufacturing method for high linear density EUV multilayer blazed grating

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Embodiment 1

[0037] The invention provides a method for preparing a high linear density extreme ultraviolet multilayer film blazed grating, such as figure 1 As shown, the preparation method at least includes the following steps:

[0038] First execute step S1, please refer to the attached figure 2 , a substrate 1 is provided, and a low-energy ion beam 3 is used to irradiate the surface of the substrate 1 to form a periodic array 4 of zigzag nanostructures.

[0039] The substrate 1 is a single crystal material composed of at least two chemical elements, that is, a stoichiometric material composed of two or more chemical components. According to one embodiment, the nanofabricated material is a compound semiconductor material, in particular a III-V compound semiconductor material such as GaAs, InAs, GaSb. At the same time, the nano-fabricated material can also be a II-VI group semiconductor material, such as ZnSe, CdTe, HgS or a compound composed of two group four elements in the chemical ...

Embodiment 2

[0056] The present invention will further illustrate the preparation method of the high linear density extreme ultraviolet multilayer film blazed grating of the present invention through corresponding implementation cases and with reference to the accompanying drawings.

[0057] Step 1. Provide a GaAs substrate to be irradiated, using an energy of 1keV and a beam density of 10 15 cm -2 the s -1 , the dose is 10 19 cm -2 Ar + The ion beam irradiates the GaAs(001) surface forwardly at 410°C.

[0058] Figure 4 shows the scanning electron micrographs of the GaAs(001) surface after irradiation at 410°C, Figure 5 and Image 6 shows the transmission electron micrographs of the GaAs(001) surface after irradiation at 410°C, where, Image 6 Yes Figure 5 A magnified photograph of a single sawtooth structure in . from Figure 5 and Image 6 It can be seen that a periodic array of zigzag nanostructures is produced on the surface of GaAs, and the period of the periodic array ...

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Abstract

The invention relates to a manufacturing method for high linear density EUV multilayer blazed grating comprising the steps of: providing a substrate and irradiating a surface of the substrate with low energy ion beam to produce serrated periodic array of nanostructures; then growing periodic multilayer films on the serrated periodic array of nanostructures to produce EUV multilayer blazed grating. The manufacturing method for high linear density EUV multilayer blazed grating comprises only two steps, simplifying the complex technology of traditional preparation method. Furthermore, linear density of the EUV multilayer blazed grating produced by the manufacturing method is greatly increased so that diffraction efficiency and spectral resolution are greatly increased.

Description

technical field [0001] The invention relates to the technical fields of semiconductor and optical microfabrication, in particular to a preparation method of a high linear density extreme ultraviolet multilayer film blazed grating. Background technique [0002] The extreme ultraviolet band refers to a section of the electromagnetic spectrum with a wavelength from 5nm to 40nm. There are a large number of atomic resonance absorption lines in this band, and almost any material has serious absorption of radiation in the extreme ultraviolet band. Therefore, the development of extreme ultraviolet optics was very slow before the 1970s. In the past 40 years, the advent of multilayer mirrors has improved this situation. Applications such as extreme ultraviolet astronomy, soft X-ray microscopy, extreme ultraviolet projection lithography, and X-ray plasma diagnosis have been realized by using multilayer mirrors. However, the spectral resolution (λ / Δλ) of multilayer mirrors is low. I...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G02B5/18
CPCB81C1/00031B81C2201/0198G02B5/1857H01L21/2633H01L21/302
Inventor 欧欣贾棋斯蒂芬·福斯柯王曦
Owner SHANGHAI INST OF MICROSYSTEM & INFORMATION TECH CHINESE ACAD OF SCI
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