Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Chemical vapor deposition (CVD) method adopting microwave heating mode

A technology of chemical vapor deposition and microwave heating, which is applied in the field of chemical vapor deposition (CVD), can solve the problems of slow heating rate, high energy consumption, and low production efficiency, and achieve the effects of increased efficiency, uniform film thickness, and improved production efficiency

Inactive Publication Date: 2015-12-02
NORTHEASTERN UNIV
View PDF6 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] Aiming at the deficiencies of the above-mentioned prior art, the present invention provides a chemical vapor deposition method using microwave heating, which solves the problems of slow heating rate, high energy consumption, and low production efficiency in the current chemical vapor deposition process

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Chemical vapor deposition (CVD) method adopting microwave heating mode
  • Chemical vapor deposition (CVD) method adopting microwave heating mode
  • Chemical vapor deposition (CVD) method adopting microwave heating mode

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0026] (1) Select high-purity graphite as the substrate, process it into a cylindrical substrate, hang it in the reactor chamber, turn on the rotary vane pump, and vacuum the reaction chamber to 0.1 Torr;

[0027] (2) Turn on the microwave heating system, with an initial power of 6kW, and heat at a heating rate of 10°C / min to a temperature of 1100°C;

[0028] (3) After heating and volatilizing titanium tetrachloride and boron chloride, they are mixed with a heating belt and hydrogen, and then input into the reaction chamber together, in which TiCl 4 The dosage is 450g / h, BCl 3 The dosage is 1000g / h, the flow rate of hydrogen is 0.7m 3 / h, the aeration time is 2 hours, that is, the deposition time is 2 hours. During this process, the temperature of the substrate is kept at 1100 ° C. The reaction gas and unreacted gas are pumped out by a vacuum pump, and after passing through the iron filings absorption part, they pass through the 0.2mol / L of NaOH solution is sprayed and wash...

Embodiment 2

[0031] (1) Choose silicon carbide as the substrate, process it into a sheet-like substrate, hang it in the reactor chamber, turn on the rotary vane pump, and vacuum the reaction chamber to 1 Torr;

[0032] (2) Turn on the microwave heating system, with an initial power of 4.5kW, and heat at a heating rate of 5°C / min until the temperature is 1000°C;

[0033] (3) After heating and volatilizing titanium tetrachloride and boron chloride, they are mixed with a heating belt and hydrogen, and then input into the reaction chamber together, in which TiCl 4 The dosage is 300g / h, BCl 3 The dosage is 600g / h, the flow rate of hydrogen is 0.4m 3 / h, the aeration time is 1 hour, that is, the deposition time is 1 hour. During this process, the temperature of the substrate is kept at 1000 ° C. The reaction gas and unreacted gas are pumped out by a vacuum pump, and after passing through the iron filings absorption part, they pass through 0.01mol / L of NaOH solution is sprayed and washed for c...

Embodiment 3

[0036] (1) Choose graphite composite material as the matrix, process it into a cylindrical matrix, hang it in the reactor cavity, turn on the rotary vane pump, and evacuate the reaction cavity to 0.5 Torr;

[0037] (2) Turn on the microwave heating system, with an initial power of 9kW, and heat at a heating rate of 12°C / min to a temperature of 500°C;

[0038] (3) After heating and volatilizing titanium tetrachloride and boron chloride, they are mixed with a heating belt and hydrogen, and then input into the reaction chamber together, in which TiCl 4 The dosage is 400g / h, BCl 3 The dosage is 900g / h, the flow rate of hydrogen is 0.5m 3 / h, the aeration time is 5 hours, that is, the deposition time is 5 hours. During this process, the temperature of the substrate is kept at 500 ° C. The reaction gas and unreacted gas are pumped out by a vacuum pump, and after passing through the iron filings absorption part, they pass through 1mol / L The NaOH solution is sprayed and washed for c...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
Thicknessaaaaaaaaaa
Thicknessaaaaaaaaaa
Thicknessaaaaaaaaaa
Login to View More

Abstract

The invention relates to the technical field of chemical vapor deposition (CVD), in particular to a CVD method adopting a microwave heating mode. The CVD method includes the steps that (1) one of graphite, silicon carbide and a graphite composite material or a silicon carbide composite material is processed into a base body in a needed shape and hung in a reaction cavity, and the reaction cavity is sealed and vacuumized to 0.1-1 Torr; (2) the base body is heated to the temperature of 500-1200 DEG C through microwaves, and the output power of the microwaves is 1-80 kW; and (3) reaction gas is introduced into the reaction cavity for 1-20 hours, the temperature of the base body is kept at 500-1200 DEG C in the gas introduction process, film materials are obtained, and reaction tail gas passes through metal chips, is subjected to spraying washing and is discharged after sufficient absorption. The base body is heated through microwaves, so that the temperature rise time of the base body is shortened, and production efficiency is improved.

Description

technical field [0001] The invention relates to the technical field of chemical vapor deposition (CVD), in particular to a chemical vapor deposition method using microwave heating. Background technique [0002] Chemical Vapor Deposition (CVD) is a traditional technique for preparing thin films and is widely used in the deposition of a variety of materials in the semiconductor industry, including a wide range of insulating materials, most metal materials and metal alloy materials. The principle is to use gaseous precursor reactants to decompose or react with each other in some components of gaseous precursors through chemical reactions between atoms and molecules, and deposit and form thin films on the substrate. [0003] The existing chemical vapor deposition (CVD) method mainly uses direct current to heat the graphite heating element, so that the whole cavity reaches the reaction temperature, and the energy consumption is serious. The temperature of multiple parts of the he...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): C23C16/46
Inventor 孙树臣卢帅丹黄小晓朱小平李宽贺涂赣峰彭杨威张路杰袁天明
Owner NORTHEASTERN UNIV
Features
  • Generate Ideas
  • Intellectual Property
  • Life Sciences
  • Materials
  • Tech Scout
Why Patsnap Eureka
  • Unparalleled Data Quality
  • Higher Quality Content
  • 60% Fewer Hallucinations
Social media
Patsnap Eureka Blog
Learn More

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2025 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com