Chemical vapor deposition (CVD) method adopting microwave heating mode

A technology of chemical vapor deposition and microwave heating, which is applied in the field of chemical vapor deposition (CVD), can solve the problems of slow heating rate, high energy consumption, and low production efficiency, and achieve the effects of increased efficiency, uniform film thickness, and improved production efficiency

Inactive Publication Date: 2015-12-02
NORTHEASTERN UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0005] Aiming at the deficiencies of the above-mentioned prior art, the present invention provides a chemical vapor deposition method using microwave heati

Method used

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  • Chemical vapor deposition (CVD) method adopting microwave heating mode
  • Chemical vapor deposition (CVD) method adopting microwave heating mode
  • Chemical vapor deposition (CVD) method adopting microwave heating mode

Examples

Experimental program
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Example Embodiment

[0025] Example 1

[0026] (1) Select high-purity graphite as the substrate, process it into a cylindrical substrate, hang it in the reactor cavity, turn on the rotary vane pump, and vacuum the reaction cavity to 0.1 Torr;

[0027] (2) Turn on the microwave heating system, the initial power is 6kW, and the heating rate is 10℃ / min to heat to 1100℃;

[0028] (3) After heating and volatilizing titanium tetrachloride and boron chloride, they are mixed with hydrogen through a heating belt and then fed into the reaction chamber together. 4 The dosage is 450g / h, BCl 3 The dosage is 1000g / h, and the flow rate of hydrogen is 0.7m 3 / h, the aeration time is 2 hours, that is, the deposition time is 2 hours. During this process, the temperature of the substrate is maintained at 1100°C. The reaction gas and unreacted gas are pumped out by the vacuum pump, and pass through the iron filings absorption part and pass 0.2mol / L NaOH solution spray washing is completely absorbed and then discharged.

[0...

Example Embodiment

[0030] Example 2

[0031] (1) Select silicon carbide as the substrate, process it into a sheet-like substrate, hang it in the reactor cavity, turn on the rotary vane pump, and evacuate the reaction cavity to 1 Torr;

[0032] (2) Turn on the microwave heating system, the initial power is 4.5kW, and the heating rate is 5℃ / min to heat to 1000℃;

[0033] (3) After heating and volatilizing titanium tetrachloride and boron chloride, they are mixed with hydrogen through a heating belt and then fed into the reaction chamber together, where TiCl 4 The dosage is 300g / h, BCl 3 The dosage is 600g / h, and the flow rate of hydrogen is 0.4m 3 / h, the aeration time is 1 hour, that is, the deposition time is 1 hour. During this process, the temperature of the substrate is maintained at 1000 ℃, and the reaction gas and unreacted gas are pumped out by the vacuum pump. After passing through the iron filings absorption part, the temperature is 0.01mol / L NaOH solution spray washing is completely absorbed ...

Example Embodiment

[0035] Example 3

[0036] (1) Select graphite composite material as the matrix, process it into a cylindrical matrix, hang it in the reactor cavity, turn on the rotary vane pump, and vacuum the reaction cavity to 0.5 Torr;

[0037] (2) Turn on the microwave heating system, the initial power is 9kW, and the heating rate is 12℃ / min to heat to 500℃;

[0038] (3) After heating and volatilizing titanium tetrachloride and boron chloride, they are mixed with hydrogen through a heating belt and then fed into the reaction chamber together, where TiCl 4 The dosage is 400g / h, BCl 3 The dosage is 900g / h, and the flow rate of hydrogen is 0.5m 3 / h, the aeration time is 5 hours, that is, the deposition time is 5 hours. During this process, the temperature of the substrate is maintained at 500°C. The reaction gas and unreacted gas are pumped out by the vacuum pump, and pass through the iron filings absorption part and then pass 1mol / L The NaOH solution spray washing is completely absorbed and then ...

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Abstract

The invention relates to the technical field of chemical vapor deposition (CVD), in particular to a CVD method adopting a microwave heating mode. The CVD method includes the steps that (1) one of graphite, silicon carbide and a graphite composite material or a silicon carbide composite material is processed into a base body in a needed shape and hung in a reaction cavity, and the reaction cavity is sealed and vacuumized to 0.1-1 Torr; (2) the base body is heated to the temperature of 500-1200 DEG C through microwaves, and the output power of the microwaves is 1-80 kW; and (3) reaction gas is introduced into the reaction cavity for 1-20 hours, the temperature of the base body is kept at 500-1200 DEG C in the gas introduction process, film materials are obtained, and reaction tail gas passes through metal chips, is subjected to spraying washing and is discharged after sufficient absorption. The base body is heated through microwaves, so that the temperature rise time of the base body is shortened, and production efficiency is improved.

Description

technical field [0001] The invention relates to the technical field of chemical vapor deposition (CVD), in particular to a chemical vapor deposition method using microwave heating. Background technique [0002] Chemical Vapor Deposition (CVD) is a traditional technique for preparing thin films and is widely used in the deposition of a variety of materials in the semiconductor industry, including a wide range of insulating materials, most metal materials and metal alloy materials. The principle is to use gaseous precursor reactants to decompose or react with each other in some components of gaseous precursors through chemical reactions between atoms and molecules, and deposit and form thin films on the substrate. [0003] The existing chemical vapor deposition (CVD) method mainly uses direct current to heat the graphite heating element, so that the whole cavity reaches the reaction temperature, and the energy consumption is serious. The temperature of multiple parts of the he...

Claims

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Application Information

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IPC IPC(8): C23C16/46
Inventor 孙树臣卢帅丹黄小晓朱小平李宽贺涂赣峰彭杨威张路杰袁天明
Owner NORTHEASTERN UNIV
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