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Polycrystalline black silicon structure and liquid phase preparation method thereof

A technology of black silicon and liquid phase, which is applied in the field of polycrystalline black silicon structure and its liquid phase preparation, can solve the problems affecting the smoothness of the surface, and achieve the effect of uniform structure size, low reflectivity and low temperature

Active Publication Date: 2015-12-09
NANJING UNIV OF AERONAUTICS & ASTRONAUTICS
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Problems solved by technology

As an etchant commonly used in MEMS technology, TMAH has an etching temperature of 80°C. Surface hillocks will be formed during the etching process, which will affect the smoothness of the surface.

Method used

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  • Polycrystalline black silicon structure and liquid phase preparation method thereof
  • Polycrystalline black silicon structure and liquid phase preparation method thereof
  • Polycrystalline black silicon structure and liquid phase preparation method thereof

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preparation example Construction

[0036] In order to control the preparation cost of black silicon and improve the conversion efficiency of black silicon cells, an embodiment of the present invention provides a method for preparing an inverted pyramid black silicon structure, including:

[0037] (1) cleaning the surface of the silicon wafer;

[0038] (2) Deposit silver nanoparticles on the surface of the silicon wafer, and catalyze and corrode the black silicon nanoporous structure;

[0039] (2) Cleaning the prepared black silicon with NSR solution to form evenly distributed inverted pyramid anti-reflection structures on the surface of the silicon wafer.

[0040] In the technical solutions provided by the embodiments of the present invention, the uniformity and structure of black silicon prepared by the MACE liquid phase method are controllable. After using the NSR solution to expand the holes, the inverted pyramid structure is uniform, which has anti-reflection performance and is beneficial to the subsequent...

Embodiment 1

[0044] (1) First use acidic hydrogen peroxide containing sulfuric acid to clean the polysilicon by acid oxidation, then use weak alkaline hydrogen peroxide containing amine to carry out alkaline oxidation cleaning, then clean it with dilute hydrofluoric acid solution, and finally clean it with The acidic hydrogen peroxide of hydrochloric acid is used for acidic oxidation cleaning, rinsed with ultrapure water (DI water) in the middle of each cleaning, and finally dried with a low boiling point organic solvent.

[0045] (2) Deposit a layer of silver nanoparticles on the surface of the silicon wafer immersed in the solution, 0.002MAgNO 3 +4MHF, response time 50s;

[0046] (3) Immerse the silicon wafer deposited with silver nanoparticles in the solution for corrosion, 0.3MH 2 o 2 +1.5MHF to obtain nano-hole structure, the reaction time is 180s. ;

[0047] (4) immerse the etched black silicon wafer in the solution for cleaning, remove residual silver nanoparticles, H 2 o 2 : ...

Embodiment 2

[0051] (1) First, use acidic hydrogen peroxide containing sulfuric acid to perform acidic oxidation cleaning on polysilicon, then use weak alkaline hydrogen peroxide containing amine to carry out alkaline oxidation cleaning, then clean with dilute hydrofluoric acid solution, and finally clean with The acidic hydrogen peroxide of hydrochloric acid is used for acidic oxidation cleaning, rinsed with ultrapure water (DI water) in the middle of each cleaning, and finally dried with a low boiling point organic solvent.

[0052] (2) Deposit a layer of silver nanoparticles on the surface of the silicon wafer immersed in the solution, 0.002MAgNO 3 +4MHF, response time 50s;

[0053] (3) Immerse the silicon wafer deposited with silver nanoparticles in the solution for corrosion, 0.3MH 2 o 2 +1.5MHF to obtain nano-hole structure, the reaction time is 180s. ;

[0054] (4) immerse the etched black silicon wafer in the solution for cleaning, remove residual silver nanoparticles, H 2 o ...

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Abstract

The invention discloses a polycrystalline black silicon structure for a high-efficient solar cell and a liquid phase preparation method thereof. The preparation method comprises steps of: (1) pre-cleaning a silicon chip; (2) preparing a black silicon structure on the surface of the silicon chip by using metal assisted chemical etching (MACE) technology; (3) performing optimization treatment on the black silicon structure by using NSR (Nano-Structure-Rebuilding) solution and finally forming an inverted pyramid structure easy to passivate and distributed uniformly. The method performs optimization treatment on the black silicon structure by using the NSR solution and has great application potential in the preparation of the polycrystalline black silicon solar cell.

Description

technical field [0001] The invention relates to a polycrystalline black silicon structure for high-efficiency solar cell production and a liquid-phase preparation method thereof. Background technique [0002] Among the many ways to improve the conversion efficiency of solar cells, reducing the surface reflectance of silicon wafers is a very effective way. In the existing production technology, alkali texturing is used to prepare micron-scale pyramid structures for monocrystalline silicon, and micron-scale worm-like structures are prepared for polycrystalline silicon using acid texturing. The reflectivity of single crystal is controlled at about 11%, and that of polycrystalline silicon is controlled at 24%. There is still a large room for optimization of the reflectivity. Black silicon technology was discovered in the late 1990s. Professor Eric Mazur of Harvard University et al. [AppliedPhysicsLetters, 1998, 73(12): 1673-1675] used femtosecond laser technology to obtain ligh...

Claims

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Application Information

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IPC IPC(8): H01L31/18H01L31/0236C30B33/10
CPCC30B33/10H01L31/0236H01L31/02366H01L31/18Y02E10/50Y02P70/50
Inventor 沈鸿烈蒋晔王威
Owner NANJING UNIV OF AERONAUTICS & ASTRONAUTICS
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