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Semi-transparent CdZnTe (cadmium zinc telluride) film solar cell

A thin film solar cell, cadmium zinc telluride technology, applied in circuits, photovoltaic power generation, electrical components and other directions, can solve the problem of opacity of the battery

Inactive Publication Date: 2015-12-16
SICHUAN UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, this CdZnTe thin-film solar cell is not suitable for solar cells because the absorbing layer has hundreds to thousands of nanometers of CdZnTe or CdTe thin film, and tens of nanometers of opaque back electrode material, which makes the whole cell opaque. Used as translucent curtain walls for buildings

Method used

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  • Semi-transparent CdZnTe (cadmium zinc telluride) film solar cell
  • Semi-transparent CdZnTe (cadmium zinc telluride) film solar cell

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Embodiment 1

[0011] The first translucent Cd 1-x Zn x Te thin film solar cell structure such as figure 1 As shown, the battery is of n-i-p structure. in SnO 2 : On the F / CdS room temperature substrate, first co-evaporate CdTe and ZnTe to the substrate to form Cd 1-x Zn x Te film, x is between 0.1-1, and the thickness is 100nm-500nm. Cd obtained by evaporation 1-x Zn x The Te thin film was taken out, annealed in dry nitrogen at 300°C to 350°C, kept for 30 minutes, and then naturally cooled to room temperature. By evaporation method in Cd 1-x Zn x A ZnTe:Cu thin film is prepared on the Te thin film with a thickness of 50 nm, and then heat-treated at 150° C. to 200° C. in an annealing furnace nitrogen atmosphere. Finally, a 200nm ZnO:N thin film was plated by sputtering as a p-type transparent back electrode. Thus the first translucent Cd 1-x Zn x Te thin film solar cells.

Embodiment 2

[0013] Second translucent Cd 1-x Zn x Te thin film solar cell structure such as figure 2 As shown, the battery is an n-p structure. in SnO 2 : On the F / ZnS room temperature substrate, three targets of CdTe, ZnTe and Cu are co-sputtered onto the substrate to form Cd 1-x Zn x Te: Cu thin film, x is between 0.1-1, and the thickness is 100nm-500nm. Cd obtained by sputtering 1-x Zn x The Te:Cu film was taken out, annealed at 300°C to 350°C in dry nitrogen, kept for 30 minutes, and then naturally cooled to room temperature. Coated 50 layers of graphene film by sputtering method as transparent back electrode. Thus the second translucent Cd 1-x Zn x Te thin film solar cells.

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Abstract

The invention belongs to the new energy material and device field and especially relates to a semi-transparent CdZnTe film solar cell used for exterior walls of buildings. A CdZnTe film serves as the absorption layer material of the film solar cell. The CdZnTe (material) is a direct gap semiconductor and has a high visible light absorption coefficient. The forbidden bandwidth of the CdZnTe can change from 1.5 eV to 2.2 eV with an increase in the zinc content. Therefore, film materials in different colors can be made by adjusting the proportions of the zinc and cadmium elements. The semi-transparent CdZnTe film solar cell structure is further formed by further adding transparent electrodes in the front and the back of the film materials. The semi-transparent film solar cell can have partial sunlight transmitted and further generate power with relatively high conversion efficiency. Therefore, the semi-transparent film solar cell becomes an ideal curtain wall for building integration.

Description

technical field [0001] The field of the invention belongs to the field of new energy, and in particular relates to a semi-transparent thin-film solar cell used for building exterior walls. Background technique [0002] Solar cells use solar energy to generate electricity, but due to the low power density of sunlight and the low conversion efficiency of solar cells, the construction of solar cell power stations needs to occupy a large area of ​​land to receive enough sunlight. In cities and regions with relatively concentrated population, from the perspective of saving land, photovoltaic integrated buildings have emerged as the times require. Photovoltaic integrated buildings are characterized by covering the surface of the building with solar cells, so that the walls of the building have the function of photovoltaic power generation at the same time, which can meet the power consumption of some buildings, thereby effectively achieving the purpose of energy saving and emissio...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/065H01L31/0296H01L31/0352H01L31/0445
CPCY02B10/10Y02E10/50H01L31/065H01L31/02966H01L31/0352H01L31/042
Inventor 武莉莉冯良桓李卫张静全王文武徐航黎兵曾广根刘才
Owner SICHUAN UNIV