Semiconductor cut-out switch based on silicon carbide, and manufacturing method thereof

Abstract

The invention discloses a manufacturing method for a semiconductor cut-out switch based on silicon carbide. The method comprises the following steps: using silicon carbide as an N+ substrate, a phosphorus-doped N base region, an aluminum-doped P base region, and a boron-doped heavy-doping P+ region epitaxially growing in sequence on the substrate; respectively processing two ends of the formed device to form a cathode electrode and an anode electrode; using a mechanical cutting oblique angle method to execute platform modeling and gumming protection, so as to complete a manufacturing process of the semiconductor cut-out switch. The invention also discloses a semiconductor cut-out switch based on silicon carbide, the switch being manufactured by the method. The semiconductor cut-out switch manufactured by the manufacturing method has larger compromise among pumping, switching, and switching characteristics, heat radiation requirement under a high-frequency condition is reduced, and reliability under high-temperature condition is improved.

Description

technical field [0001] The invention belongs to the technical field of semiconductor switches, and more specifically relates to a silicon carbide-based semiconductor circuit breaker and a preparation method thereof. Background technique [0002] Semiconductor opening switch SOS (Semiconductor Opening Switch) is a new type of solid switching device. It was first discovered by S.K.Lyubutin and others at the Russian Institute of Electrophysics in 1991 when they used high-voltage diodes (SDL) for rectification experiments. Current and reverse current (current density up to tens of kA / cm 2 , the current passing time is hundreds of ns) through p + -p-n-n + The structure of the semiconductor, the decay time of the reverse current is reduced to tens of ns. This phenomenon that the large current density is truncated in the nanosecond time is called the SOS effect. The compact all-solid-state high repetition frequency pulse power source based on SOS switch has the advantages of sm...

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Problems solved by technology

[0003] However, further studies have shown that for silicon-based SOS semiconductor off-circuit switches, there are limitations in the optimization of parameters such as cut-off impedance, cut-off time, voltage gain, output pulse width at half maximum, and energy transfer efficiency, pumping characteristics and off-state The compromise between characteristics is limited by the silicon material, so that there is a limit to the overall performance. Improving the pumping characteristics will cause losses to the off-state characteristics, and improving the off-state characteristics will also cause losses to the pumping characteristics; in this case, In this field, there is an urgent need to find a more perfect semiconductor circuit breaker and its preparation method, so as to solve the above-mentioned problems of the prior art and obtain a semiconductor circuit breaker with higher comprehensive performance

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