Anti-ferroelectric ceramic material which is sintered at low temperatures and has high energy storage density and method for preparing anti-ferroelectric ceramic material

A technology of high energy storage density and ceramic material, applied in the field of high energy storage density antiferroelectric ceramic material and preparation thereof, can solve the problems of increasing the production cost of multilayer ceramic capacitors, high sintering temperature, and high electrode Pd content, and achieves good Application prospect, high energy storage density, low sintering temperature effect

Active Publication Date: 2015-12-30
SHANGHAI INST OF CERAMIC CHEM & TECH CHINESE ACAD OF SCI
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Problems solved by technology

However, the incorporation of glass powder will reduce the polarization strength of antiferroelectric ceramics, which will affect the releasable energy storage density under a fixed working electric field.
Moreover, the sintering temperature of 1050°C requires a higher Pd content in the electrodes, which increases the production cost of multilayer ceramic capacitors
In addition, CN103693958A d

Method used

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  • Anti-ferroelectric ceramic material which is sintered at low temperatures and has high energy storage density and method for preparing anti-ferroelectric ceramic material
  • Anti-ferroelectric ceramic material which is sintered at low temperatures and has high energy storage density and method for preparing anti-ferroelectric ceramic material
  • Anti-ferroelectric ceramic material which is sintered at low temperatures and has high energy storage density and method for preparing anti-ferroelectric ceramic material

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preparation example Construction

[0037] The antiferroelectric ceramic material provided by the invention can be prepared by adopting the traditional solid-state powder making and air sintering techniques. In one example, its preparation method comprises the following steps:

[0038] 1) with Pb 3 o 4 , La 2 o 3 , ZrO 2 , SnO 2 、TiO 2 As starting material, according to Pb 0.97 La 0.02 (Zr x sn y Ti 1-x-y )O 3 The stoichiometric ratio of ingredients, mixed by wet ball milling, drying and calcination to get Pb 0.97 La 0.02 (Zr x sn y Ti 1-x-y )O 3 Powder, wherein, 0.4≤x≤0.6, 0.4≤y≤0.6, x and y are the number of moles;

[0039] 2) Add the sintering aid CuO to the powder synthesized in step 1) at a mass ratio of 0.2-1 wt%. After fine grinding, add a binder to granulate, and press to form a green body;

[0040] 3) removing the organic matter in the green body from the green body obtained in step 2) at a certain temperature;

[0041] 4) Sintering the mold-expelled green body obtained in step 3) a...

Embodiment 1

[0050] Antiferroelectric ceramic materials consist of:

[0051] Pb 0.97 La 0.02 (Zr 0.45 sn 0.45 Ti 0.10 )O 3 +0.5wt.%CuO

[0052] (1) Calculate the required Pb according to the composition of the above chemical formula 3 o 4 , La 2 o 3 , ZrO 2 , SnO 2 、TiO 2 Quality, mixed by wet ball milling method, according to the mass ratio of raw materials: balls: deionized water = 1:1.5:0.8, mixed for 6-8 hours, so that all components are mixed evenly. After drying, pass through a 30-mesh sieve, briquette in an air atmosphere, raise the temperature to 850°C at a rate of 2°C / min, and keep it warm for 3 hours. The synthetic composition is Pb 0.97 La 0.02 (Zr 0.45 sn 0.45 Ti 0.10 )O 3 of powder;

[0053] (2) Add the sintering aid CuO to the powder synthesized in step (1) according to the stoichiometric ratio. According to the ratio of material: ball: deionized water = 1:2:0.6, the wet method is finely ground for 24 hours, then the material is dried, passed through a 40-...

Embodiment 2

[0062] Antiferroelectric ceramic materials consist of:

[0063] Pb 0.97 La 0.02 (Zr 0.45 sn 0.45 Ti 0.10 )O 3 +0.4wt.%CuO

[0064] (1) Repeat the preparation method of Example 1 according to the above formula, and sinter the green body obtained at 1000° C. and keep it warm for 2 hours. The dielectric properties and energy storage characteristics of the ceramic samples were tested. At room temperature, the relative permittivity is 648, the dielectric loss is 0.005, and the AFE-FE phase transition electric field is 6.8kV / mm. Under the working electric field of 8.4kV / mm, the releasable energy storage density is 1.18J / cm 3 , the energy storage efficiency is 75%, see Table 1 for details;

[0065] (2) Surface SEM observations were carried out on ceramic samples, figure 2 The surface topography structure diagram of the ceramic sample of the present embodiment is provided;

[0066](3) The hysteresis loop was measured at room temperature for the ceramic sample of this embod...

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Abstract

The invention relates to an anti-ferroelectric ceramic material which is sintered at low temperatures and has high energy storage density and a method for preparing the anti-ferroelectric ceramic material. Chemical components of the anti-ferroelectric ceramic material conform to a chemical general formula of Pb<0.97>La<0.02> (Zr<x>Sn<y>Ti<1-x-y>) O<3>+a*wt.% CuO, wherein the x is larger than or equal to 0.4 and is smaller than or equal to 0.6, the y is larger than or equal to 0.4 and is smaller than or equal to 0.6, the a is larger than or equal to 0.2 and is smaller than or equal to 1, the x and the y are mole numbers, and the a is a mass percent. The anti-ferroelectric ceramic material and the method have the advantages that appropriate sintering additives are chosen, and appropriate Zr/Sn/Ti ratios are adjusted, so that the PLZST anti-ferroelectric energy storage ceramic material sintered at the temperatures of 950-1000 DEG C can be obtained; the anti-ferroelectric ceramic material is high in energy storage density and energy storage efficiency, can be used for manufacturing energy storage multilayer ceramic capacitors and has an excellent application prospect.

Description

technical field [0001] The invention belongs to the technical field of functional ceramic materials, and in particular relates to a low-temperature sinterable high-energy-storage-density antiferroelectric ceramic material for energy storage capacitors and a preparation method thereof. Background technique [0002] Pulse power technology refers to the electrophysical technology that slowly inputs energy of lower power into the energy storage device for a long time, and then releases it to the load with a very high power density in a very short time (Science, 313: 334 -336,2006), widely used in high-tech, civil and other fields. The basic system of pulsed power consists of two parts: one is the energy storage system at low power levels; the other is the generation and efficient transmission of high power pulses to the load. The energy storage system is an important part of the pulse power device. At present, the initial energy is mainly provided in the form of capacitance, in...

Claims

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Application Information

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IPC IPC(8): C04B35/493C04B35/622C04B35/63
Inventor 王根水徐晨洪刘振陈学锋董显林曹菲
Owner SHANGHAI INST OF CERAMIC CHEM & TECH CHINESE ACAD OF SCI
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