Atom gas chamber inner wall coating method for slowing down atomic spin relaxation

Abstract

The invention provides an atom gas chamber inner wall coating method for slowing down atomic spin relaxation. The method includes the steps that firstly, rubidium atom steam is injected into an atom gas chamber; then, hydrogen with the pressure intensity of 10 Torr to 100 Torr is released into the atom gas chamber through hydride solid gas release agents (such as titanium hydride and calcium hydride), the pressure intensity is kept for tens to hundreds of hours at the temperature 50 DEG C to 150 DEG C, and a layer of rubidium hydride thin film can be attached to the inner wall of the atom gas chamber; and finally, hydrogen left in the gas chamber is evacuated, and the coating process is finished. Hydrogen is generated through the solid gas release agents in the coating process; compared with a traditional method that a high-pressure hydrogen bottle is used as a hydrogen source, the process safety is improved when rubidium hydride coating is conducted on the inner wall of the atom gas chamber, and hydrogen left in the gas chamber after rubidium hydride coating is evacuated; and compared with the method for directly sealing hydrogen in the gas chamber, stability of performance of the atom gas chamber is easily improved.

Description

technical field [0001] The invention relates to the technical field of atomic gas chamber preparation, in particular to an atomic gas inner wall coating method for slowing down the relaxation of atomic spins. Background technique [0002] The atomic sensing gas chamber is the core physical component of atomic sensing instruments such as atomic inertial instruments, atomic clocks, and atomic magnetometers, and its performance parameters directly affect the performance of such sensing instruments. A typical atomic gas chamber uses optical glass to encapsulate alkali metal atoms such as rubidium and cesium in a vacuum or an inert gas atmosphere, and fills in a certain pressure of inert gas as a working gas and buffer gas. [0003] In the atomic gas chamber, while the atoms gain spin polarization, there is also a macroscopic spin loss process caused by the collision between the atoms and the inner wall of the gas chamber. The time from polarization to loss of atomic spin is cal...

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Problems solved by technology

In the above process, there are mainly the following problems. One is that the RbH coating is formed after the atomic gas chamber is sealed. Since the atomic gas chamber is in a sealed state during this process, the amount of free rubidium atoms in the atomic gas chamber decreases with the formation of the RbH film. At the same time, H in the gas chamber 2 The gas pressure changes, so as the baking time goes by, the performance of the atomic gas chamber will change, which increases the uncontrollable risk in the preparation of the atomic gas chamber; in addition, because high-pressure hydrogen is used as the hydrogen source in the coating process, the above There is a greater risk in the coating process

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