Preparation method for tungsten-oxide-nanosheet-structured gas sensor working at room temperature

A technology of gas sensor and tungsten oxide, which is applied in the direction of nanotechnology, nanotechnology, nanotechnology, etc. for materials and surface science, can solve the problems of high working temperature and large power consumption of tungsten oxide gas sensor, and achieve high Sensitivity, simple operation, less process conditions

Inactive Publication Date: 2016-02-03
TIANJIN UNIV
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Problems solved by technology

[0004] In order to solve the problems existing in the prior art, the present invention provides a method for preparing a gas sensor with a tungsten oxide nanosheet structure for working at room temperature, which overcomes the problems of high operating temperature and large power consumption of the tungsten oxide gas sensor in the prior art. question

Method used

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  • Preparation method for tungsten-oxide-nanosheet-structured gas sensor working at room temperature
  • Preparation method for tungsten-oxide-nanosheet-structured gas sensor working at room temperature
  • Preparation method for tungsten-oxide-nanosheet-structured gas sensor working at room temperature

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Experimental program
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Embodiment 1

[0029] (1) Clean the ceramic sheet (aluminum oxide) substrate:

[0030] A ceramic sheet (1 cm × 2 cm) was used as the substrate, and the ceramic sheet substrate was placed in acetone solvent and absolute ethanol for 15 min and ultrasonically oscillated for 15 min to remove surface organic impurities. and dried in an infrared oven.

[0031] (2) Prepare interdigitated electrodes of Pt on the ceramic substrate:

[0032] The ceramic substrate is placed in the vacuum chamber of the DPS-Ⅲ type high-vacuum target magnetron sputtering equipment, using platinum with a mass purity of 99.99% as the target material, and argon gas with a mass purity of 99.999% as the working gas, sputtering The working pressure is 2.0Pa, the sputtering power is 85W, the sputtering time is 10min, the substrate temperature is room temperature, and interdigitated platinum electrodes are formed on the surface of the alumina substrate.

[0033] (3) Preparation of solvothermal reaction solution:

[0034] Firs...

Embodiment 2

[0045] The difference between this embodiment and Example 1 is that the reaction temperature of the solvothermal reaction in step (4) is 180° C., and the prepared tungsten oxide nanosheet structure gas sensor element is at room temperature to lppmNO 2 The sensitivity for gas is 6.72.

Embodiment 3

[0047] The difference between this embodiment and Example 1 is that the reaction temperature of the solvothermal reaction in step (4) is 190° C., and the prepared tungsten oxide nanosheet structure gas sensor element is at room temperature to lppmNO 2 The sensitivity for gas is 8.34.

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Abstract

The invention discloses a preparation method for a tungsten-oxide-nanosheet-structured gas sensor working at room temperature. The preparation method comprises the steps that a ceramic wafer substrate is cleaned, a platinic interdigital electrode is prepared on the ceramic wafer substrate, a solvothermal reaction solution is prepared, a tungsten-oxide-nanorod-structured gas sensor is prepared through a solvothermal method, an aluminum oxide substrate after a solvothermal reaction is cleaned, and thermal treatment is performed on elements of the tungsten-oxide-nanorod-structured gas sensor. According to the preparation method, the tungsten-oxide-nanosheet-structured gas sensor can be prepared at low cost. According to the solvothermal method, operation is easier, the technological conditions needing to be controlled are few, and no pollution to the environment is generated. The preparation method for the tungsten-oxide-nanosheet-structured gas sensor which can detect nitrogen oxide gas with the extremely low concentration (can reach 0.1 ppm) and is high in sensitivity and rapid to respond/recover is supplied, and the important practice and research significances are achieved.

Description

technical field [0001] The invention relates to a method for preparing a nitrogen oxide gas sensor, in particular to a method for preparing a gas sensor with a tungsten oxide nanosheet structure for working at room temperature. Background technique [0002] With the rapid development of modern industry, various harmful gases (such as NO 3 , CO, NH 3 , SO 2 etc.), which has caused great harm to human health. Of which nitrogen oxides (NO x ) as a toxic and harmful gas is the main cause of acid rain and photochemical smog. With the enhancement of human's awareness of environmental protection, gas sensors with high sensitivity, high selectivity, repeatability and other characteristics are desired by people. WO 3 The disadvantage of high working temperature (about 250°C) of gas-sensing materials brings complexity and instability to the integration of sensing systems. For this reason, scientists and technicians have been working on reducing the working temperature of gas-se...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G01N27/12B82Y30/00B82Y40/00
Inventor 胡明王自帅王毅斐刘相承袁琳
Owner TIANJIN UNIV
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