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A kind of preparation method of patterned substrate and patterned substrate

A technology for patterning substrates and sapphire substrates, applied in electrical components, circuits, semiconductor devices, etc., can solve problems such as unfavorable light output, affecting light extraction efficiency, etc., and achieve the effect of improving quality and improving light extraction efficiency.

Active Publication Date: 2018-03-06
HC SEMITEK SUZHOU
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0006] In order to solve the problem that the existing technology is not conducive to light emission and affects the light extraction efficiency, the embodiment of the present invention provides a method for preparing a patterned substrate and a patterned substrate

Method used

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  • A kind of preparation method of patterned substrate and patterned substrate
  • A kind of preparation method of patterned substrate and patterned substrate
  • A kind of preparation method of patterned substrate and patterned substrate

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Experimental program
Comparison scheme
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Embodiment 1

[0041] An embodiment of the present invention provides a method for preparing a patterned substrate, see figure 1 , the preparation method comprises:

[0042] Step 101: performing photolithography on the sapphire substrate to form an array of conical bumps on the sapphire substrate.

[0043] Optionally, the diameter of the large surface of the frusto-conical bump can be 2.5-2.9 μm, the diameter of the small surface of the frusto-conical bump can be 1.4-1.8 μm, and the height of the frusto-conical bump can be 0.8-1.2 μm.

[0044] In an implementation manner of this embodiment, step 101 may include:

[0045] Coating a layer of photoresist on the sapphire substrate;

[0046] exposing the photoresist through the first mask plate, and developing the exposed photoresist to obtain the array of the first cylindrical photoresist;

[0047] Etching the array of the first cylindrical photoresist and the sapphire substrate to form an array of conical bumps on the sapphire substrate.

...

Embodiment 2

[0099] An embodiment of the present invention provides a method for preparing a patterned substrate. The preparation method provided in this embodiment is a specific realization of the preparation method provided in Embodiment 1. Refer to image 3 , the preparation method comprises:

[0100] Step 201: coating a layer of photoresist on the sapphire substrate.

[0101] Step 202: exposing the photoresist by using a stepper photolithography machine, and developing the exposed photoresist to obtain a first cylindrical photoresist array.

[0102] Step 203a: Under the electrode power of 500w, the first cylindrical photoresist array is etched for 300-400s, the pressure is 2.0mT, the flow rate of BCl3 is 58sccm, and the flow rate of CHF3 is 6sccm, forming a conical photoresist Glue the array.

[0103] Step 203b: Under the electrode power of 300w, etch the array of conical photoresist and the sapphire substrate for 300-400s, the pressure is 2.0mT, the flow rate of BCl3 is 58sccm, and ...

Embodiment 3

[0116] see Figure 4 , the embodiment of the present invention provides a patterned substrate, the patterned substrate is made by the preparation method as provided in embodiment 1 or embodiment 2, the patterned substrate is provided with a frustum-shaped bump 10 Array, an array of conical bumps 20 is arranged on the array of conical bumps 10 and between the arrays of conical bumps 10, the bottom area of ​​the conical bumps 20<the bottom area of ​​the conical bumps 10, the conical The height of the truncated bump 20<the height of the frustum-shaped bump 10.

[0117] Optionally, the diameter of the large surface of the frustum-shaped bump 10 may be 2.5-2.9 μm, the diameter of the small surface of the frustum-shaped bump 10 may be 1.4-1.8 μm, and the height of the frustum-shaped bump may be 0.8-1.2 μm.

[0118] Optionally, the diameter of the bottom surface of the conical bumps may be 0.3-0.6 μm, the height of the conical bumps may be 0.5-0.8 μm, and the pitch of the conical bu...

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Abstract

The invention discloses a patterned substrate manufacturing method and a patterned substrate, which belong to the field of semiconductor technologies. The manufacturing method comprises the steps of: performing photoetching on a sapphire substrate to form an array of truncated-cone-shaped convex blocks on the sapphire substrate; performing photoetching on the sapphire substrate where the array of truncated-cone-shaped convex blocks is formed; and forming an array of conical convex blocks on the truncated-cone-shaped convex blocks and among the truncated-cone-shaped convex blocks, wherein the bottom area of each conical convex block is less than that of each truncated-cone-shaped convex block, and the height of each conical convex block is less than that of each truncated-cone-shaped convex block. According to the patterned substrate manufacturing method and the patterned substrate, the array of conical convex blocks is formed on the truncated-cone-shaped convex blocks and among the truncated-cone-shaped convex blocks, the small-sized PSS is superposed on the large-sized PSS, distance between the truncated-cone-shaped convex blocks in the large-sized PSS is large, epitaxial wafers can grow between the truncated-cone-shaped convex blocks, and the quality of the epitaxial wafer is increased; and distance between the conical convex blocks in the small-sized PSS is small, thereby being conductive to multiple reflections of light, and improving light extraction efficiency .

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to a method for preparing a patterned substrate and the patterned substrate. Background technique [0002] Patterned Sapphire Substrate (PSS for short) is a sapphire substrate with patterns etched on its surface. The GaN material grown on the PSS changes from vertical epitaxy to lateral epitaxy. On the one hand, it effectively reduces the dislocation density of the GaN epitaxial material, reduces the reverse leakage current, and improves the life of the Light Emitting Diode (LED for short); on the other hand, On the one hand, the light emitted by the active region is scattered by the GaN and sapphire substrate interface multiple times, which changes the exit angle of the total reflection light and improves the light extraction efficiency. Therefore, it is very important to prepare a qualified PSS. [0003] The preparation method of the existing PSS includes: coating photores...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L33/00H01L33/20
CPCH01L33/005H01L33/20
Inventor 张博业宋得林
Owner HC SEMITEK SUZHOU