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A kind of high polarization strength bismuth ferrite thick film material system and medium and low temperature preparation method

A technology of polarization strength and bismuth ferrite, which is applied in the manufacture/assembly of semiconductor devices, piezoelectric/electrostrictive devices, piezoelectric/electrostrictive/magnetostrictive devices, etc. The bismuth material has low polarization strength and low withstand voltage value, and achieves the effects of avoiding oxygen vacancies, low cost, and low leakage

Active Publication Date: 2018-10-30
欧阳俊
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0005] The purpose of the present invention is to overcome the problems of low polarization strength, easy leakage and low withstand voltage value of the prepared bismuth ferrite material, and provide a thick film material system and preparation method with simple preparation process, low crystallization temperature and low cost

Method used

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  • A kind of high polarization strength bismuth ferrite thick film material system and medium and low temperature preparation method
  • A kind of high polarization strength bismuth ferrite thick film material system and medium and low temperature preparation method
  • A kind of high polarization strength bismuth ferrite thick film material system and medium and low temperature preparation method

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Embodiment 1

[0039] A method for preparing a bismuth ferrite thick film material with high polarization strength at medium and low temperatures, comprising the following steps:

[0040] (1) Treatment of the substrate

[0041] Cleaning and installation: using semiconductor silicon single crystal as the substrate, the substrate is ultrasonically cleaned with acetone and absolute ethanol in sequence, then rinsed with deionized water, dried with high-purity nitrogen, placed in the sample holder, and then the sample The holder is fixed on the sample holder in the vacuum chamber;

[0042] Vacuuming: Close the equipment chamber, pump the chamber with a mechanical pump to achieve a low vacuum, and then pump it with a molecular pump until the chamber pressure is 2×10 -4 Pa;

[0043] Heating: Introduce argon gas into the chamber, adjust the flow rate of argon gas to 39 sccm, and adjust the chamber pressure to 2.5 Pa at the same time, then heat the substrate to raise its temperature to 500°C.

[0...

Embodiment 2

[0051] The difference between this embodiment and Example 1 is that the substrate is heated to 450° C. in step (1), and other steps and parameters are the same as those in Example 1.

Embodiment 3

[0053] The difference between this embodiment and Example 1 is that in step (1), the substrate is heated to 475° C., and other steps and parameters are the same as in Example 1.

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Abstract

The invention provides a high polarization strength bismuth ferrite thick film material system and a medium and low temperature preparation method, including a substrate, a buffer layer, a bottom electrode, a bismuth ferrite dielectric layer, and a top electrode, with a semiconductor single crystal as the substrate, buffer The layer is a thin layer of metal or metal oxide, and the bottom electrode is a thin layer of inert metal. The crystallization temperature of the material system in the provided preparation process is low (≤500°C), which is beneficial to the application of large-area silicon integrated circuits; the low crystallization temperature greatly reduces the volatilization of elements in the material system and avoids defects such as oxygen vacancies in the material Produced and obtained a membrane material with excellent performance, its saturated polarization strength is as high as ~130μC / cm2, and the external voltage that can withstand is not less than 200V. The technical process and equipment of the invention are simple to operate, and the raw materials used are all sold in the market, the cost is low, the device is easy to integrate, and it is suitable for industrial promotion and production.

Description

technical field [0001] The invention belongs to the technical field of electronic material development and thick film material preparation, and in particular relates to a high polarization strength bismuth ferrite thick film material system and a medium-low temperature preparation method. Background technique [0002] In recent years, ferroelectric ceramics and their thin film materials have been widely used in the fields of microelectronics and optoelectronics, especially in high-capacity memories and micro-electromechanical systems, due to their excellent dielectric, ferroelectric, piezoelectric, electro-optic and nonlinear optical properties. application prospects. However, there are still some problems in its material selection and preparation methods: as (1) lead-based thin film materials are still dominant in industrial production and application fields, and the toxicity of lead has brought serious harm to the environment and human health. Huge challenge; (2) In the m...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L41/187H01L41/39H01L33/44H10N30/853H10N30/093
CPCH01L33/44H10N30/8561H10N30/093
Inventor 欧阳俊朱汉飞刘梦琳
Owner 欧阳俊
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