Method for manufacturing trench-type power device
A power device, trench type technology, applied in the direction of semiconductor devices, semiconductor/solid-state device manufacturing, electrical components, etc., can solve the problems of BVDSS breakdown voltage reduction, device failure, and aggravated diffusion
Inactive Publication Date: 2016-04-06
SHANGHAI HUAHONG GRACE SEMICON MFG CORP
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Problems solved by technology
But this will also increase the diffusion in the vertical direction. Too much vertical diffusion will reduce the breakdown voltage of BVDSS, which will easily lead to device failure.
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[0019] In order to make the content of the present invention clearer and easier to understand, the content of the present invention will be described in detail below in conjunction with specific embodiments and accompanying drawings.
[0020] Figure 1 to Figure 4 Each step of the method for manufacturing a trench-type power device according to a preferred embodiment of the present invention is schematically shown.
[0021] Specifically, as Figure 1 to Figure 4 As shown, the method for manufacturing a trench power device according to a preferred embodiment of the present invention includes:
[0022] The first step: first implant the well region 11 on the substrate 10 (such as a silicon substrate), and then form a pattern 20 of a hard mask on the well region 11 (preferably, the material of the hard mask is silicon nitride) , and form sidewalls 30 on both sides of the hard mask pattern 20, and then use the hard mask pattern 20 formed with the spacers 30 as a mask to perform etc...
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The method provides a method for manufacturing a trench-type power device. The well region injection is executed in a substrate, the pattern of a hard mask is formed in a well region, and side walls are formed at two sides of the hard mask pattern. The etching is executed by using the hard mask pattern as a mask, and a device region groove and an end region groove are formed in the substrate. A polysilicon material is deposited, the device region groove is filled with the polysilicon material, and a protection ring is formed in the side wall of the end region groove. A side wall is removed, the ion injection is executed by using the hard mask pattern as the mask, and heavy doped regions are formed at the two sides of the device region groove and one side of the end region groove. An oxide layer is deposited and is etched such that an opening which is opened by the device region oxide is formed in the first groove with the need of forming a contact hole at the surface in the device region groove. The hard mask pattern is removed, and a contact region groove which is formed by removing the hard mask pattern is formed in the device region oxide.
Description
technical field [0001] The invention relates to the field of semiconductor manufacturing, and more specifically, the invention relates to a method for manufacturing trench power devices. Background technique [0002] Trench MOS transistor (trenchMOS), as a new type of vertical structure device, is developed on the basis of VDMOS (Vertical Double Diffused Metal-Oxide Semiconductor Field Effect Transistor), both of which belong to high cell density device. However, compared with the former, this structure has many performance advantages: such as lower on-resistance, low gate-to-drain charge density, thus low conduction and switching losses and fast switching speed. At the same time, since the channel of the trench metal oxide semiconductor is vertical, the channel density can be further increased and the chip size can be reduced. [0003] A trench power device is a specific trench metal oxide semiconductor transistor. However, the current conventional method of manufacturin...
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IPC IPC(8): H01L21/336H01L29/78
Inventor 沈思杰
Owner SHANGHAI HUAHONG GRACE SEMICON MFG CORP