Cheap disorder broad-spectrum wide-angle antireflection structure and manufacturing method thereof

Abstract

The invention discloses a cheap disorder broad-spectrum wide-angle antireflection structure and a manufacturing method thereof. The manufacturing method comprises the steps of: s1, depositing a dielectric film on the surface of a substrate material (or structure); s2, forming a metal colloid film on the surface of the dielectric film; s3, heating the metal colloid film to obtain a metal nano structure; s4, etching the dielectric film by taking the metal nano structure as a mask to form the antireflection structure; s5, and removing the metal nano structure. The dielectric nano structure manufacturing scheme provided by the invention is simple and practicable, can achieve large-area manufacturing, only needs low temperature, and is low in manufacturing energy consumption and high in efficiency. In addition, the manufactured disorder dielectric nano structure and the residual metal mask can obtain excellent broad-spectrum wide-angle antireflection effect.

Description

technical field [0001] The application belongs to the field of optics and optoelectronics, in particular to a low-cost disordered wide-spectrum wide-angle anti-reflection structure and a manufacturing method thereof. Background technique [0002] Wide-spectrum and wide-angle anti-reflection is a functional characteristic of devices required in many optical fields. How to obtain the required wide-spectrum and wide-angle anti-reflection without compromising other functional characteristics of devices has always been the goal pursued by the fields of optics and optoelectronics. [0003] As far as the field of photovoltaics is concerned, III-V solar cells and Si-based solar cells are the main components in the field of photovoltaics, but their high refractive index makes their reflection loss as high as 30% or more. However, the resulting surface non-radiative recombination makes it difficult to collect carriers and cannot effectively improve cell efficiency. How to improve its ...

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Problems solved by technology

[0003] As far as the field of photovoltaics is concerned, III-V solar cells and Si-based solar cells are the main components in the field of photovoltaics, but their high refractive index makes their reflection loss as high as 30% or more. However, the resulting surface non-radiative recombination makes it difficult to collect carriers and cannot effectively improve the efficiency of the cell. How to improve its wide-spectrum anti-reflection performance without destroying its surface carrier collection ability has always been a difficult problem in the field of photovoltaics.

[0004] Although coating the surface of solar cells with a dielectric film has become the main method of anti-reflection, and its surface nano-scale texture is more conducive to its wide-spectrum anti-reflection, but its preparation process mostly requires nano-scale photolithography, which is expensive and expensive. It is easy to improve the cost performance of the battery; metal self-assembly is widely used as a cheap large-area nanostructure pattern formation scheme, but the high self-assembly temperature makes this scheme incompatible with the preparation process of many optoelectronic devices, and will destroy the original device. performance, in addition, the energy loss caused by high temperature also increases the cost

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