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An energy-saving and environment-friendly organic light-emitting element

An organic light-emitting element, energy-saving and environmentally friendly technology, applied in electrical components, semiconductor devices, electro-solid devices, etc., can solve the problem of not being able to optimize electronic conduction loss and organic interface loss at the same time.

Active Publication Date: 2017-05-17
PEKING UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, since the use of one organic N-type doped layer cannot simultaneously optimize the electron conduction loss and the organic interface loss, a double N-type doped layer technology was developed (ZL201110001221.7)

Method used

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  • An energy-saving and environment-friendly organic light-emitting element
  • An energy-saving and environment-friendly organic light-emitting element
  • An energy-saving and environment-friendly organic light-emitting element

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0059] The preparation structure is ITO / CBP:ReO 3 =1:0.01 Thickness 1nm / m-MTDATA:F 4 TCNQ=1:0.01 Thickness 10nm / CBP:ReO 3 =1:0.01 Thickness 1nm / CBP Thickness 10nm / Alq3 Thickness 60nm / Bphen Thickness 5nm / Bphen:Cs=1:0.01 Thickness 5nm / NTCDA:LCV=1:0.01 Thickness 20nm / Bphen:Cs=1:0.01 Thickness 5nm / Al Organic light-emitting diodes with a thickness of 100nm.

[0060] The organic light-emitting diode is composed of a layer of ITO anode on a glass substrate, a layer of CBP:ReO with a thickness of 1 nm deposited on the ITO anode. 3 Thin film organic P-type doped hole injection layer, one layer deposited on CBP:ReO 3 m-MTDATA with a thickness of 10 nm on the thin-film organic P-type doped hole-injection layer: F 4 TCNQ thin film organic P-type doped hole transport layer, one layer deposited on m-MTDATA:F 4 1nm-thick CBP:ReO on TCNQ thin-film organic P-type doped hole-transport layer 3Thin film organic P-type doped hole injection auxiliary layer, one layer deposited on CBP:ReO 3 A...

Embodiment 2

[0101] The preparation structure is ITO / TCTA: MoO 3 =1:1 thickness 20nm / MeO-TPD:ReO 3 =1:1 thickness 200nm / TCTA:MoO 3 =1:1 thickness 20nm / TCTA thickness 50nm / Alq3 thickness 60nm / Bphen thickness 20nm / Bphen:Cs=1:0.5 thickness 20nm / NTCDA:LCV=1:0.1 thickness 300nm / Bphen:Cs=1:0.5 thickness 20nm / Al Organic light-emitting diodes with a thickness of 100nm.

[0102] The organic light-emitting diode is composed of a layer of ITO anode on a glass substrate, a layer of TCTA: MoO deposited on the ITO anode with a thickness of 20nm 3 Thin film organic P-type doped hole injection layer, one layer deposited on TCTA: MoO 3 MeO-TPD:ReO with a thickness of 200 nm on a thin-film organic P-type doped hole-injection layer 3 Thin-film organic P-type doped hole transport layer, one layer deposited on MeO-TPD: ReO 3 20 nm thick TCTA:MoO on thin-film organic P-type doped hole-transport layer 3 Thin film organic P-type doped hole injection auxiliary layer, one layer deposited on TCTA: MoO 3 TCTA ...

Embodiment 3

[0130] The prepared structure is Au 20nm / CBP:ReO 3 =1:0.01 Thickness 1nm / m-MTDATA:F 4 TCNQ=1:0.01 Thickness 10nm / CBP:ReO 3 =1:0.01 Thickness 1nm / CBP Thickness 10nm / Alq3 Thickness 60nm / Bphen Thickness 5nm / Bphen:Cs=1:0.01 Thickness 5nm / NTCDA:LCV=1:0.01 Thickness 20nm / Bphen:Cs=1:0.01 Thickness 5nm / Al Organic light-emitting diodes with a thickness of 100nm.

[0131] The organic light-emitting diode is composed of a layer of Au anode with a thickness of 20 nm on a glass substrate, a layer of CBP:ReO with a thickness of 1 nm deposited on the Au anode 3 Thin film organic P-type doped hole injection layer, one layer deposited on CBP:ReO 3 m-MTDATA with a thickness of 10 nm on the thin-film organic P-type doped hole-injection layer: F 4 TCNQ thin film organic P-type doped hole transport layer, one layer deposited on m-MTDATA:F 4 1nm-thick CBP:ReO on TCNQ thin-film organic P-type doped hole-transport layer 3 Thin film organic P-type doped hole injection auxiliary layer, one layer ...

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Abstract

The present invention relates to an energy-saving and environment-friendly organic light-emitting element, which is an organic light-emitting diode that adopts three organic P-type doped layers to enhance hole current and three organic N-type doped layers to enhance electron current, comprising the following sequentially arranged Material layer: a layer of anode on the substrate, organic P-type doped hole injection layer, organic P-type doped hole transport layer, organic P-type doped hole injection auxiliary layer, organic hole transport layer, organic light-emitting Layer, organic electron transport layer, organic N-type doped electron injection auxiliary layer, organic N-type doped electron transport layer, organic N-type doped electron injection layer and a layer of cathode. Compared with organic light-emitting diodes that use one or two organic P-type doped layers to enhance hole current and one or two organic N-type doped layers to enhance electron current, the present invention has a current density ratio that is nearly 70 times higher, and can significantly Improve device performance, has a broad application market and great commercial value.

Description

technical field [0001] The technical solution of the present invention relates to an organic light emitting diode, specifically an organic light emitting diode that uses three organic P-type doped layers to enhance hole injection and three organic N-type doped layers to enhance electron injection. Background technique [0002] The function of organic light-emitting diodes is to convert electrical energy into light energy, that is, electrons and holes are injected into the organic film from the negative electrode and the positive electrode respectively, and then the two form tight electron and hole pairs in the light-emitting layer, and the radiation decays to emit photons. . Therefore, the size of hole current and electron current in OLED directly determines the device performance. How to enhance the hole current and electron current is a major issue that must be solved to further improve the OLED flat panel display and lighting technology. [0003] In organic light-emitti...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L51/50H01L51/00
CPCH10K71/164H10K50/156H10K50/166H10K50/17H10K50/171
Inventor 尚静
Owner PEKING UNIV
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