Device and method for silicon carbide crystal deflection shaping

Abstract

The invention provides a device and method for silicon carbide crystal deflection shaping. The device comprises a clamp for clamping a crystal ingot, a deflection adjusting module for adjusting the deflection direction and a substrate attached to a milling bed; and the deflection adjusting module is a dual-sine module. By means of the device and method, it can be guaranteed that silicon carbide crystal deflection crystal faces are molded in a one-time orientation manner, the repeated correction process during conventional deflection shaping is avoided, the shaping efficiency is effectively improved, and the device is simple in operation and higher in accuracy.

Description

technical field [0001] The invention relates to off-angle shaping of silicon carbide crystals, and more particularly, the invention relates to a device for off-angle shaping of silicon carbide crystals and a method for using the device for shaping the off-angle. Background technique [0002] Silicon carbide crystal is the third-generation wide-bandgap semiconductor material. Compared with the first-generation silicon and second-generation gallium arsenide semiconductor materials, it has a large band gap, high breakdown voltage, high thermal conductivity, and high electron saturation drift rate. , high electron mobility, small dielectric constant, strong radiation resistance, good chemical stability and other excellent physical and chemical properties, as well as the characteristics of compatibility with silicon integrated circuit technology, excellent performance makes silicon carbide crystal become a high-temperature, high-frequency manufacturing , high-power, radiation-res...

AI Technical Summary

Problems solved by technology

Due to the high hardness of silicon carbide crystals, which is second only to diamond, this brings great difficulties to crystal processing, especially for silicon carbide substrates for epitaxy. Due to process requirements, the (0001) plane must be along the direction 4-degree or 8-degree deflection is performed, and the growth of silicon carbide crystals may be processed by multiple deflection processes due to the micropipe control requirements. Therefore, the grinding amount of the end face of the ingot is relatively large when processing the substrate wafer

[0004] At present, the more advanced off-angle processing method is to install an online orientation system on the program-controlled grinding machine, and accurately process the off-angle surface through the adjustment of the universal turntable, but this method is relatively expensive.

The traditional processing method is to use ordinary grinding through combined with sine gauge to perform two orientation deflection processing. This method takes a long time to process and has a large amount of end face grinding.

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