SiC high-temperature high-energy aluminum ion implantation machine

Abstract

The invention discloses a SiC high-temperature high-energy aluminum ion implantation machine. The SiC high-temperature high-energy aluminum ion implantation machine includes an ion source used for generating aluminum-containing ions, and an ion beam transmission system used for transmitting aluminum ion beams; the ion beam transmission system comprises an extraction system, a mass analyzer, an analysis diaphragm, an accelerating tube, a vertical scanning electrode plate and a parallel beam lens which are arranged sequentially; the extraction system extracts out ions generated by the ion source and generates an ion beam; the ion beam passes through the mass analyzer and the analysis diaphragm sequentially and then is accelerated by the accelerating tube; the shape of the accelerated ion beam spot is corrected through a lens; the ion beam spot passes through the vertical scanning electrode plate, and thereafter, the ion beam spot can be scanned to a fan-shaped beam belt; the fan-shaped beam belt passes through the parallel beam lens so as to form parallel belt-shaped beams; the parallel belt-shaped beams enter a high-temperature target chamber system; the high-temperature target chamber system is used for bearing wafers to be subjected to implantation; and the wafers are heated to meet high-temperature process requirements of aluminum implantation. With the SiC high-temperature high-energy aluminum ion implantation machine of the invention adopted, choosability and energy precision of the charges of implanted aluminum ions can be ensured, and wafer heating requirements of aluminum implantation process can be satisfied.

Description

technical field [0001] The invention mainly relates to the field of semiconductor integrated circuit equipment, in particular to a SiC high-temperature high-energy aluminum ion implanter. Background technique [0002] The third-generation wide-bandgap semiconductor materials and devices are the core technologies for the development of technologies such as high-power, high-frequency high-temperature, anti-strong radiation, blue lasers and ultraviolet detectors. SiC has high thermal conductivity, high electron saturation velocity and large critical breakdown electric field, and is the preferred successor of Si material in the field of power electronics and power semiconductors. [0003] Since the atomic density of SiC is higher than that of silicon, to achieve the same implantation depth, the SiC ion implantation process requires ions to have higher implantation energy, generally reaching 350-700KeV. Al atoms are generally used in the ion implantation process of forming P-typ...

AI Technical Summary

Problems solved by technology

[0004] The existing traditional SiC ion implanter has shortcomings such as long optical path, difficult beam adjustment, and small beam current index; the high-voltage power supply mode for ion acceleration is fuel tank power supply, resulting in the entire high-voltage insulation distance being as long as 2-3 meters, and the equipment occupies an area of Large, the thickness of the lead plate for radiation shielding is up to 8mm, the ion source is a metal microwave ion source, the structure of the ion source is complex, and the production cost is high

It can be seen that the defects of the above prior art cause the whole equipment to have the disadvantages of high use and maintenance costs

Moreover, all existing implanters cannot guarantee the implantation ion purity, beam purity, beam parallelism, implantation angle and depth control, implantation repeatability and implantation yield.

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