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Trench gate structure for power device and fabrication method of trench gate structure

A technology for power devices and trench gates, which is used in semiconductor/solid-state device manufacturing, semiconductor devices, electrical components, etc., can solve the problems of slow switching speed and large gate-to-drain capacitance, and achieves improved switching speed, reduced Cgd, and simple process. Effect

Inactive Publication Date: 2016-05-04
ANHUI PROVINCE QIMEN COUNTY HUANGSHAN ELECTRIC APPLIANCE
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] One of the objectives of the present invention is to provide a trench gate structure for power devices, which solves the problems of large gate-to-drain capacitance and slow switching speed in existing power devices.

Method used

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  • Trench gate structure for power device and fabrication method of trench gate structure
  • Trench gate structure for power device and fabrication method of trench gate structure
  • Trench gate structure for power device and fabrication method of trench gate structure

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0036] Embodiment 1: as Figure 5 , Figure 17 As shown, a trench gate structure for a power device includes a silicon substrate 100, and a trench 101 is formed on the surface of the silicon substrate 100. The trench 101 has a U-shaped structure as a whole; The lower part of the groove is provided with a U-shaped first layer of silicon oxide 102 along the inner wall of the trench, and a U-shaped first layer of polysilicon 103 is arranged in the U-shaped first layer of silicon oxide 102, and the first layer of polysilicon 103 is filled with The second layer of silicon oxide 104 ; the first layer of silicon oxide 102 , the first layer of polysilicon 103 and the second layer of silicon oxide 104 form an OPO structure from the periphery of the trench to the center of the trench.

[0037] A U-shaped third layer of silicon oxide 105 is arranged above the OPO structure formed by the first layer of silicon oxide 102, the first layer of polysilicon 103 and the second layer of silicon ...

Embodiment 2

[0040] Embodiment 2: as Figures 1 to 10 As shown, a method for manufacturing a trench gate structure for a power device includes the following steps:

[0041] (1) Refer to figure 1 , on the surface of the silicon substrate 100 or the epitaxial layer, a trench 101 is formed by etching;

[0042] (2) Refer to figure 2, in the trench 101 and on the surface of the silicon substrate 100 or the epitaxial layer outside the trench, a first layer of silicon oxide 102 is grown by thermal oxidation, with a thickness of 0.05-0.25 microns;

[0043] (3) Refer to image 3 , growing a first layer of polysilicon 103 on the first layer of silicon oxide 102 by vapor deposition, with a thickness of 0.10-0.30 microns;

[0044] (4) Refer to Figure 4 , the surface of the first layer of polysilicon 103 is oxidized to grow a second layer of silicon oxide 104, and the second layer of silicon oxide 104 fills the trench formed by the first layer of polysilicon 103; the method of surface oxidation ...

Embodiment 3

[0051] Embodiment 3: as Figures 1 to 3 , Figures 11 to 17 As shown, a method for manufacturing a trench gate structure for a power device includes the following steps:

[0052] (1) Refer to figure 1 , on the surface of the silicon substrate 100 or the epitaxial layer, a trench 101 is formed by etching;

[0053] (2) Refer to figure 2 , in the trench 101 and on the surface of the silicon substrate 100 or the epitaxial layer outside the trench, grow a first layer of silicon oxide 102 by thermal oxidation, with a thickness of 0.05-0.25 microns;

[0054] (3) Refer to image 3 , growing a first layer of polysilicon 103 on the first layer of silicon oxide 102 by vapor deposition, with a thickness of 0.10-0.30 microns;

[0055] (4) Refer to Figure 11 , grow a second layer of silicon oxide 104 on the surface of the first layer of polysilicon 103 by vapor deposition, and the second layer of silicon oxide 104 fills the trenches formed by the first layer of polysilicon 103; this...

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Abstract

The invention discloses a trench gate structure for a power device and a fabrication method of the trench gate structure. In the trench gate structure disclosed by the invention, a first layer of silicon oxide, a first layer of poly-silicon and an OPO structure filled with a second layer of silicon oxide are respectively formed at the lower part in a trench from outside to inside, a second third layer of silicon oxide is arranged at the periphery of the upper part in the trench, the third layer of silicon oxide and the filled second layer of poly-silicon form an OP structure at the upper part, and meanwhile, the second layer of poly-silicon at the upper part and a first layer of poly-silicon at the lower part are separated by the bottom of the third layer of silicon oxide. By the structure, the thickness of silicon oxide between a gate and a drain is increased, thus, relatively low gate-drain capacitance is obtained, and a faster switching speed is achieved. Moreover, the fabrication method is simple and stable and is easy to implement. The trench gate structure and the fabrication method thereof, disclosed by the invention, can be widely applied to various trench power devices such as a trench metal oxide semiconductor field effect transistor (MOSFET) and a trench insulated gate bipolar transistor (IGBT).

Description

technical field [0001] The invention relates to a structure of a power device and a manufacturing method thereof, in particular to a trench gate structure for a power device and a manufacturing method thereof. Background technique [0002] In order to reduce the size of power devices and improve the performance of power devices, trench structures are introduced into power devices. Such as Trench Metal Oxide Semiconductor Field Effect Transistor (TrenchMOSFET), Trench Insulated Gate Bipolar Transistor (Trench IGBT), Trench MOS Controlled Thyristor (TrenchMCT) and similar devices. [0003] In terms of trench technology, whether it is applied to MOSFET devices, or applied to IGBT or other power devices, there have been many patents. Such as US patents US4,914,058, US5,442,214, US5,473,176 and US5,770,878, and domestic patents CN101558499A, CN1205658C, CN104465769A, CN105225935A, CN102097434A, CN203199017A, CN239A938, etc. These patents realize various trench gate structures a...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L29/423H01L21/28
CPCH01L29/423H01L21/28H01L29/4236
Inventor 饶祖刚王民安黄富强项建辉王日新
Owner ANHUI PROVINCE QIMEN COUNTY HUANGSHAN ELECTRIC APPLIANCE
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