Method of directly preparing flexible and transparent conductive film through sol-gel process

A transparent conductive film, gel method technology, applied in circuits, electrical components, heat treatment equipment, etc., can solve the problems of inability to form films, small film grain size, high resistivity, etc., to optimize electrical conductivity, slow down The effect of bending deformation

Inactive Publication Date: 2016-05-11
NORTHWESTERN POLYTECHNICAL UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The attached crystallization of the deposited material is generally higher than 300°C, and the general organic substrate begins to deform at about 130°C, which is not conducive to film formation; in addition, when the substrate temperature is too low, the deposited atomic groups do not have enough energy Migration and crystallization will increase the defects in the film, so that the obtained film has a smaller grain size, a higher resistivity, and a lower visible light transmittance; in addition, the lattice matching between the organic substrate and the transparent conductive film is not as good as that of glass Substrate, the thin film should not be attached, especially when the substrate temperature is low, the bonding between the film and the substrate is very weak, and the thin film is easy to fall off or cannot be formed at all.
At the same time, due to the poor surface flatness of the organic substrate, the thickness of the deposited film will inevitably be uneven. These characteristics make the resistivity of the transparent conductive film prepared on the organic substrate larger. These are problems that need to be solved
In order to improve the quality of the film, the previous methods are mainly divided into two types: one is to use physical methods to prepare flexible films, such as magnetron sputtering, but this method is expensive and requires a vacuum environment, which is not conducive to large-scale film formation; After the film is made by sol-gel method, secondary treatment is carried out by ultraviolet light and other methods, but the process is relatively cumbersome

Method used

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  • Method of directly preparing flexible and transparent conductive film through sol-gel process
  • Method of directly preparing flexible and transparent conductive film through sol-gel process
  • Method of directly preparing flexible and transparent conductive film through sol-gel process

Examples

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Effect test

Embodiment 1

[0039] (1) Preparation of Al-ZnO sol with an Al doping atomic ratio of 1%: the zinc source is zinc acetate, the doping source is aluminum nitrate, the solvent is ethylene glycol methyl ether, and the stabilizer is ethanolamine. The molar ratio of aluminum nitrate to zinc acetate is 1:99, the molar ratio of ethanolamine to metal atoms is 1:1, and the sol concentration is 0.75mol / L. The raw materials zinc acetate and aluminum nitrate are weighed according to the ratio and dissolved in the solvent Add stabilizer ethanolamine to ethylene glycol methyl ether, and stir the mixed solution in a water bath at 60°C for 1 hour to obtain a transparent and clear liquid. After constant volume, continue to stir for 2 hours, and finally age at room temperature for 24 hours to obtain a stable and transparent Al - Sol of ZnO;

[0040](2) Cleaning of polyimide flexible substrates: the polyimide flexible substrates with thicknesses of 0.025mm, 0.050mm and 0.075mm were washed with dilute hydrochlo...

Embodiment 2

[0050] (1) Preparation of Al-ZnO sol with an Al doping atomic ratio of 1%: the zinc source is zinc acetate, the doping source is aluminum nitrate, the solvent is ethylene glycol methyl ether, and the stabilizer is ethanolamine. The molar ratio of aluminum nitrate to zinc acetate is 1:99, the molar ratio of ethanolamine to metal atoms is 1:1, and the sol concentration is 0.75mol / L. Weigh the raw materials zinc acetate and aluminum nitrate according to the ratio, dissolve them in the solvent ethylene glycol methyl ether, add the stabilizer ethanolamine, stir the mixed solution in a water bath at 60°C for 1 hour to obtain a transparent and clear liquid, and then Continue to stir for 2h, and finally age at room temperature for 24h to obtain a stable and transparent Al-ZnO sol;

[0051] (2) Cleaning of the polyimide flexible substrate: the polyimide flexible substrate with a thickness of 0.075mm is sequentially washed with 10% dilute hydrochloric acid, deionized water, and 10% sodi...

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Abstract

The invention provides a method of directly preparing a flexible and transparent conductive film through a sol-gel process, mainly relating to the film preparation field. The method employs a sol-gel process to directly prepare an aluminum-doped zinc oxide flexible conductive film, guarantees the transmittance of a flexible transparent conductive film, meanwhile realizes low temperature preparation of the flexible transparent conductive film, and regulates the electrical property of the flexible transparent conductive film through low temperature annealing treatment. The method optimizes the electrical property of the flexible transparent conductive film through selecting different substrate thickness and annealing conditions, realizes the direct preparation of the flexible transparent conductive film with higher transmittance and electrical properties by employing a sol-gel process, effectively optimizes the conductive performance of the film through different annealing treatments, controllably regulates the electrical property of the flexible transparent conductive film, and realizes flexible transparent conductive film production under industrialization and low cost conditions.

Description

technical field [0001] The invention relates to the field of film preparation, in particular to a preparation method of a transparent conductive film. Background technique [0002] Since the organic flexible substrate is not resistant to high temperature, it brings great difficulty to the deposition of thin film. The attached crystallization of the deposited material is generally higher than 300°C, and the general organic substrate begins to deform at about 130°C, which is not conducive to film formation; in addition, when the substrate temperature is too low, the deposited atomic groups do not have enough energy Migration and crystallization will increase the defects in the film, so that the obtained film has a smaller grain size, a higher resistivity, and a lower visible light transmittance; in addition, the lattice matching between the organic substrate and the transparent conductive film is not as good as that of glass The substrate and thin film should not be attached,...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01B13/00
CPCH01B13/00H01B13/0016
Inventor 段利兵王亚君沈浩张阳阳赵小如
Owner NORTHWESTERN POLYTECHNICAL UNIV
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