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Method for preparing thin-wall structure silicon carbide ceramics through slip casting and solid phase sintering

A technology of structural silicon carbide and grouting molding, applied in the field of ceramics, can solve problems such as poor high temperature performance, general mechanical properties, and engineering application limitations, and achieve excellent performance

Active Publication Date: 2016-05-25
CHINA IRON & STEEL RES INST GRP +2
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] At present, reaction sintering SiC is commonly used in the market to prepare radiant tubes, and since reaction sintering SiC ceramics contains a large amount of free silicon (10-20vol%), its mechanical properties are general, especially poor at high temperature, which greatly limits its engineering application.

Method used

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  • Method for preparing thin-wall structure silicon carbide ceramics through slip casting and solid phase sintering
  • Method for preparing thin-wall structure silicon carbide ceramics through slip casting and solid phase sintering
  • Method for preparing thin-wall structure silicon carbide ceramics through slip casting and solid phase sintering

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Experimental program
Comparison scheme
Effect test

Embodiment 1

[0019] SiC raw material particle size D50 = 1.6 μm; carbon black is used as carbon source, 1% boron carbide is added, the binder is a mixture of modified PVA and liquid paraffin, wherein modified PVA: liquid paraffin = 1:1, and the addition amount is 3.5 %, the addition of dispersant organic base is 1%.

[0020] Put 2000g of SiC powder, 40g of carbon black, 20g of boron carbide, and 20g of organic base into a ball milling tank, add deionized water for ball milling for 1 hour, then add 35g of modified PVA and 35g of liquid paraffin, continue ball milling for 3 hours, and pour out the slurry until the Add 5 g of n-octanol to the bubble tank, stir slowly for 2 h to remove foam, and obtain a slurry with a solid phase content of 66%.

[0021] Pour the slurry into the gypsum mold for grouting, pour out the remaining slurry in the gypsum mold after standing for 1.5 hours and recycle, continue to stand for 1.5 hours, open the gypsum mold for demoulding to obtain a green body;

[0022...

Embodiment 2

[0026] SiC raw material particle size D50 = 2 μm; carbon black is used as carbon source, 0.6% boron carbide is added, the binder is modified PVA: liquid paraffin = 1.2:1, and the addition amount is 5%. The addition amount of organic base of dispersant is 1.1%.

[0027] Put 2000g of SiC powder, 45g of carbon black, 12g of boron carbide, and 22g of organic base into a ball mill tank, add deionized water for ball milling for 1.5 hours, then add 54.5g of modified PVA and 45.5g of liquid paraffin, continue ball milling for 2 hours, and pour out the slurry To the defoaming tank, add 4g of n-octanol, stir slowly for 1.5h to defoam, and obtain a slurry with a solid phase content of 68%.

[0028] Pour the slurry into the gypsum mold, pour out the remaining slurry in the gypsum mold after standing for 2 hours and recycle, continue to stand for 1.6 hours, open the gypsum mold for demoulding to obtain a green body;

[0029] Put the SiC ceramic green body into a drying oven and keep it wa...

Embodiment 3

[0033] SiC raw material particle size D50 = 1.8 μm; carbon black is used as carbon source, 1.2% boron carbide is added, the binder is modified PVA: liquid paraffin = 3:4, and the addition amount is 6%. The amount of dispersant organic base added is 1.8%.

[0034] Put 2000g of SiC powder, 60g of carbon black, 24g of boron carbide and 36g of organic base into the ball milling tank, add deionized water and ball mill for 1.5h, then add 51.4g of modified PVA, 68.6g of liquid paraffin, continue ball milling for 1.8h and pour out Put the slurry into a defoaming tank, add 6 g of n-octanol, stir slowly for 1 h to defoam, and obtain a slurry with a solid phase content of 70%.

[0035] Pour the slurry into the gypsum mold, pour out the remaining slurry in the gypsum mold after standing for 1.6 hours and recycle, continue to stand for 2 hours, open the gypsum mold for demoulding to obtain a green body;

[0036] Put the SiC ceramic green body into a drying oven at 115°C for 12h;

[0037]...

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Abstract

The invention discloses a method for preparing thin-wall structure silicon carbide ceramics through slip casting and solid phase sintering, and belongs to the field of ceramic preparation. SiC powder is selected as a main raw material, deionized water is used as a solvent, a proper quantity of a dispersing agent and a proper quantity of a binding agent are mixed to be uniform, then, a proper quantity of a defoaming agent is added for foam removal, ceramic slurry with the high solid phase content is obtained and then poured into a plaster mold for slip casting, standing is performed for a period of time, then, remaining slurry in the plaster mold is poured out and recycled, standing is performed continuously for a period of time, and mold stripping and drying are performed for direct sintering at the temperature of 2100-2200 DEG C. The method has the advantages that the technology period is short, the method is simple and easy to implement, the obtained thin-wall structure SiC ceramic wall thickness is 3-8 mm, the density can reach 3.08-3.15 g / cm<3>, and the strength is 360-400 MPa.

Description

technical field [0001] The invention belongs to the technical field of ceramics, in particular to a method for preparing thin-walled silicon carbide ceramics by slip casting and solid phase sintering. Background technique [0002] In order to obtain steel plates with stable performance and good surface quality, it is generally required to have high temperature uniformity under the heat treatment system. Therefore, more and more medium and heavy plate factories use radiant tubes to heat non-oxidized roller hearth furnaces, while silicon carbide ceramic materials are heated With high conductivity and good thermal shock stability, it is the preferred material for radiant tubes. [0003] Since the shape of the radiant tube is complex and most of them are thin-walled, it is more appropriate to use grouting. [0004] At present, reaction sintering SiC is commonly used in the market to prepare radiant tubes, and since reaction sintering SiC ceramics contains a large amount of free...

Claims

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Application Information

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IPC IPC(8): C04B35/565C04B35/64C04B35/634C04B35/632C04B35/65
CPCC04B35/565C04B35/573C04B35/632C04B35/63416C04B35/64C04B35/65C04B2235/6022C04B2235/606C04B2235/77C04B2235/94C04B2235/96
Inventor 贺智勇张启富千粉玲王晓波
Owner CHINA IRON & STEEL RES INST GRP