A kind of ultraviolet light-emitting diode chip and preparation method thereof
A technology of light-emitting diodes and chips, applied in semiconductor devices, electrical components, circuits, etc., can solve the problems of low light-emitting efficiency of ultraviolet LED chips, and achieve the effects of improving external quantum efficiency, improving light-emitting efficiency, and reducing junction temperature.
Active Publication Date: 2018-04-20
JIANGXI ZHAO CHI SEMICON CO LTD
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[0003] The purpose of the present invention is to provide an ultraviolet light-emitting diode chip and its preparation method, aiming to solve the problem of low light extraction efficiency of ultraviolet LED chips
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[0044] In order to make the objectives, technical solutions and advantages of the present invention clearer, the present invention will be further described in detail below in conjunction with embodiments. It should be understood that the specific embodiments described herein are only used to explain the present invention, but not to limit the present invention.
[0045] The application principle of the present invention will be described in detail below with reference to the accompanying drawings.
[0046] Such as figure 1 As shown, the preparation method of the ultraviolet light emitting diode chip of the embodiment of the present invention includes the following steps:
[0047] S101: Prepare a sapphire substrate, and sequentially superimpose and grow an aluminum nitride buffer layer, an n-type aluminum gallium nitride layer, a multiple quantum well active layer, and a p-type aluminum gallium nitride layer on the surface of the sapphire substrate; The aluminum oxide buffer layer, ...
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Abstract
The invention discloses an ultraviolet light-emitting diode chip provided with a metal wire grid transparent conduction electrode and a preparing method thereof. The ultraviolet light-emitting diode chip comprises a substrate, an aluminum nitride buffering layer, an n-type aluminum gallium nitride layer, a multiple-quantum-well active layer (MQW) and a p-type aluminum gallium nitride layer, wherein the aluminum nitride buffering layer, the n-type aluminum gallium nitride layer, the multiple-quantum-well active layer (MQW) and the p-type aluminum gallium nitride layer grow from the surface of the substrate sequentially in an overlaid mode. The aluminum nitride buffering layer, the n-type aluminum gallium nitride layer, the multiple-quantum-well active layer (MQW) and the p-type aluminum gallium nitride layer form an epitaxial layer of the chip. A metal wire grid is deposited on the epitaxial layer. An aluminum reflecting layer is deposited on the metal wire grid. The chip is provided with an n-type electrode hole penetrating through the aluminum reflecting layer, the metal wire grid, the p-type aluminum gallium nitride layer, the multiple-quantum-well active layer (MQW) and the n-type aluminum gallium nitride layer. The line width, the duty ratio and the thickness of the metal wire grid can be adjusted and controlled, the ultraviolet light transmittance rate is larger than 90%, and square resistance is smaller than 25 ohm. Light outlet efficiency of installing the ultraviolet LED chip in an inverted or upright mode is improved.
Description
Technical field [0001] The invention belongs to the technical field of semiconductor lighting, and in particular relates to an ultraviolet light emitting diode chip with a metal wire grid transparent conductive electrode and a preparation method thereof. Background technique [0002] UV LED has great application value in the fields of lighting, sterilization, medical treatment, printing, biochemical testing, high-density information storage and confidential communication. For UV LED devices, in the past ten years, researchers from academia and industry at home and abroad have invested a lot of energy in researching methods to improve the quantum efficiency of UV LED chips. The metal organic chemical vapor deposition (MOCVD) method is used in the sapphire substrate. The ultraviolet LED epitaxial layer is grown on the bottom, the crystal quality of the epitaxial material is improved by adjusting the epitaxial growth process, the dislocation density of the epitaxial material is redu...
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IPC IPC(8): H01L33/36H01L33/42H01L33/06H01L33/32H01L33/46H01L33/00
CPCH01L33/0075H01L33/06H01L33/32H01L33/36H01L33/42H01L33/46
Inventor 周圣军刘胜郑晨居吕家将
Owner JIANGXI ZHAO CHI SEMICON CO LTD