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Gallium nitride-based light-emitting diode and manufacturing method thereof

A light-emitting diode, gallium nitride-based technology, applied in electrical components, nanotechnology, circuits, etc., can solve the problems of low luminous efficiency of light-emitting diodes, and achieve the effect of improving luminous efficiency and injection efficiency

Active Publication Date: 2016-06-15
HC SEMITEK SUZHOU
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0006] In order to solve the problems in the prior art that the concentration of holes in the active layer is much lower than that of electrons and the luminous efficiency of light-emitting diodes is low, an embodiment of the present invention provides a gallium nitride-based light-emitting diode and its manufacturing method

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  • Gallium nitride-based light-emitting diode and manufacturing method thereof
  • Gallium nitride-based light-emitting diode and manufacturing method thereof

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Embodiment 1

[0029] An embodiment of the present invention provides a gallium nitride-based light emitting diode, see figure 1 , the gallium nitride-based light-emitting diode includes a sapphire substrate 1, and a buffer layer 2, an undoped GaN layer 3, an N-type layer 4, an active layer 5, and a P-type layer 6 sequentially stacked on the sapphire substrate 1, The P-type layer 6 includes a plurality of P-type sublayers 61, and each P-type sublayer 61 includes a hole low barrier layer 61a, a hole supply layer 61b, a hole high barrier layer 61c, and a hole low barrier layer 61a. The hole high barrier layer 61c includes an AlGaN layer and an InGaN layer, and the hole providing layer 61b includes a P-type GaN layer.

[0030] In this embodiment, the sapphire substrate 1 adopts (0001) crystal orientation sapphire. Both the buffer layer 2 and the N-type layer 4 are GaN layers, and the active layer 5 includes alternately stacked InGaN layers and GaN layers.

[0031] Optionally, the buffer layer...

Embodiment 2

[0056] An embodiment of the present invention provides a method for manufacturing a gallium nitride-based light-emitting diode, see figure 2 , the production method includes:

[0057] Step 200: Control the temperature to 1000-1200° C., anneal the sapphire substrate in a hydrogen atmosphere for 8 minutes, and perform nitriding treatment.

[0058] Understandably, step 200 can clean the surface of the sapphire substrate.

[0059] In this embodiment, the sapphire substrate 1 adopts (0001) crystal orientation sapphire.

[0060] Step 201: Control the temperature to 400-600° C. and the pressure to 400-600 Torr to grow a buffer layer on the sapphire substrate.

[0061] In this embodiment, the buffer layer is a GaN layer.

[0062] Optionally, the thickness of the buffer layer may be 10-40 nm.

[0063] Preferably, the thickness of the buffer layer may be 15-35 nm.

[0064] Optionally, after step 201, the manufacturing method may also include:

[0065] The control temperature is 1...

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Abstract

The invention discloses a gallium nitride-based light-emitting diode and a manufacturing method thereof, and belongs to the technical field of semiconductors. The gallium nitride-based light-emitting diode comprises a sapphire substrate, a buffer layer, an undoped GaN layer, an N-type layer, an active layer and a P-type layer, wherein the buffer layer, the undoped GaN layer, the N-type layer, the active layer and the P-type layer are sequentially laminated on the sapphire substrate; the P-type layer comprises a plurality of P-type sub-layers; each P-type sub-layer comprises a hole low-barrier layer, a hole supply layer and a hole high-barrier layer; each of the hole low-barrier layer and the hole high-barrier layer comprises an AlGaN layer and an InGaN layer; and each hole supply layer comprises a P-type GaN layer. The AlGaN layers and the InGaN layers with relatively large lattice mismatches are adopted by the hole low-barrier layers and the hole high-barrier layers; a hole two-dimensional gas capable of effectively spreading charges is generated on the interfaces of the AlGaN layers and the InGaN layers due to relatively high polarization stress; certain drive force is provided for injection of an active layer in holes; and the injection efficiency of the holes is improved, so that the luminous efficiency is improved.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to a gallium nitride-based light-emitting diode and a manufacturing method thereof. Background technique [0002] Light Emitting Diode (LED for short) is a semiconductor electronic component that can emit light. Gallium nitride-based materials have excellent properties such as wide direct bandgap, strong chemical bonds, high temperature resistance, and corrosion resistance. They are ideal materials for the production of short-wavelength high-brightness light-emitting devices, ultraviolet light detectors, and high-temperature and high-frequency microelectronic devices. Full-color large-screen display, LCD backlight, signal lights, lighting and other fields. [0003] Existing LEDs include a sapphire substrate, and a buffer layer, an undoped GaN layer, an N-type layer, an active layer, and a P-type layer sequentially stacked on the sapphire substrate. Wherein, electrons in the...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L33/14H01L33/00B82Y40/00
CPCB82Y40/00H01L33/007H01L33/14
Inventor 王群郭炳磊董彬忠李鹏王江波
Owner HC SEMITEK SUZHOU
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