A kind of multilayer nanocomposite phase change film material and its preparation method and application

Abstract

The invention discloses a multilayer nanocomposite phase-change thin film material and its preparation method and application. The material is alternately arranged with a single-layer Sn2Se3 thin film and a single-layer Sb thin film, and one layer of Sn2Se3 thin film and one layer of Sb thin film are used as an alternating period. The Sn2Se3 layer of the latter alternate period is deposited on the top of the Sb layer of the previous alternate period; the general formula of the film structure of the thin film material is [Sn2Se3(a) / Sb(b)]x, wherein a and b respectively represent the single The thickness of the Sn2Se3 thin film and the single-layer Sb thin film, 1nm≤a≤50nm, 1nm≤b≤50nm, x represents the number of alternating periods or layers of the single-layer Sn2Se3 and single-layer Sb thin film, and x is a positive integer. The phase change thin film material uses Sb as the crystallization inducing layer, which can accelerate the phase change speed of the phase change material, and at the same time combines the advantages of Sn2Se3 low melting point and good thermal stability; The persistence effect can reduce the grain size, thereby shortening the crystallization time, inhibiting crystallization, and accelerating the phase transformation speed while improving thermal stability.

Description

technical field [0001] The invention belongs to the technical field of microelectronic materials, and in particular relates to a multilayer nanocomposite phase-change thin film material and its preparation method and application. Background technique [0002] Phase change memory (PCRAM) is a non-volatile information memory with great application prospects. The main part of PCRAM is a phase change material based on chalcogenide compounds. The thermal effect of electric pulses is used to make the phase change material change reversibly between amorphous state (high resistance) and crystalline state (low resistance), so as to realize data synchronization. write and erase. [0003] In the prior art, among the factors affecting various performances of PCRAM, phase change materials are one of the decisive factors. At present, the research on phase change materials mainly focuses on the Ge-Sb-Te system, where Ge 2 Sb 2 Te 5 However, this material has some defects, such as the l...

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Problems solved by technology

[0003] In the prior art, among the factors affecting various performances of PCRAM, phase change materials are one of the decisive factors. At present, the research on phase change materials mainly focuses on the Ge-Sb-Te system, where Ge 2 Sb 2 Te 5 However, this material has some defects, such as the low crystallization temperature (about 160 ° C) makes the thermal stability of the amorphous state poor, and the high melting point (about 620 ° C) makes the crystal The energy required for the transition from the amorphous state to the amorphous state is relatively high, which is not conducive to the further improvement of storage density, and cannot meet the information storage requirements of the future high-speed and big data era.

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