Nonmetal co-doped ZnO transparent conducting thin film with high migration rate and preparation method thereof

A technology of transparent conductive film and high mobility, which is applied in the direction of metal material coating process, ion implantation plating, coating, etc., can solve the problem that the conductivity of pure ZnO cannot meet the needs of use, and achieve the advantages of electron mobility, Fast conductivity, smooth growth effect

Inactive Publication Date: 2016-06-22
ZHEJIANG UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0006] The purpose of the present invention is to provide a non-metallic co-doped ZnO transparent conductive film with high mobility and its preparation method, to overcome the deficiency that the conductivity of pure ZnO cannot meet the needs of use, two kinds of non-metallic elements co-doped method to increase the carrier mobility and concentration of the film to obtain a transparent conductive film with higher conductivity and mobility

Method used

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  • Nonmetal co-doped ZnO transparent conducting thin film with high migration rate and preparation method thereof
  • Nonmetal co-doped ZnO transparent conducting thin film with high migration rate and preparation method thereof
  • Nonmetal co-doped ZnO transparent conducting thin film with high migration rate and preparation method thereof

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Experimental program
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Effect test

Embodiment 1

[0031] 1) Target preparation: according to Zn 0.92 B 0.02 f 0.06 The ratio of O to prepare BFZO ceramic targets, where the atomic ratio of B and F is 2:6;

[0032] 2) Clean the polycarbonate (PC) substrate with acetone and ethanol with an ultrasonic cleaner for 10 minutes, repeat twice, take it out, dry it with Ar gas, and place it on the substrate tray of the magnetron sputtering equipment;

[0033] 3) After installing the BFZO ceramic target, close the chamber door, turn on the mechanical pump and the molecular pump and start vacuuming until the vacuum degree reaches 5×10 -6 Torr, start the substrate heating program, and heat the substrate to 60°C;

[0034] 4) Feed pure Ar into the growth chamber, adjust the air pressure to 12mTorr and start glowing, and pre-sputter for 5 minutes to remove impurities on the target surface;

[0035] 5) Open the sputtering baffle, adjust the growth pressure to 8mTorr, turn on the RF power supply, set the power to 100W, and sputter for 1h t...

Embodiment 2

[0040] 1) Target preparation: according to Zn 0.95 B 0.02 S 0.03 The ratio of O to prepare BSZO targets, where the atomic ratio of B and S is 2:3;

[0041] 2) Clean the polycarbonate (PC) substrate with acetone and ethanol with an ultrasonic cleaner for 10 minutes, repeat twice, take it out, dry it with Ar gas, and place it on the substrate tray of the magnetron sputtering equipment;

[0042] 3) After installing the BSZO ceramic target, close the chamber door, turn on the mechanical pump and the molecular pump to start vacuuming until the vacuum degree reaches 5×10 -6 Torr, start the substrate heating program, and heat the substrate to 60°C;

[0043] 4) Feed pure Ar into the growth chamber, adjust the air pressure to 12mTorr and start glowing, and pre-sputter for 5 minutes to remove impurities on the target surface;

[0044] 5) Open the sputtering baffle, adjust the growth pressure to 8mTorr, turn on the RF power supply, set the power to 100W, and sputter for 1h to obtain ...

Embodiment 3

[0048] 1) Target preparation: according to Zn 0.92 B 0.02 Cl 0.06 Prepare B and Cl co-doped ZnO targets with the ratio of O, where the atomic ratio of B and Cl is 2:6;

[0049] 2) Clean the polycarbonate (PC) substrate with acetone and ethanol with an ultrasonic cleaner for 10 minutes, repeat twice, take it out, dry it with Ar gas, and place it on the substrate tray of the magnetron sputtering equipment;

[0050] 3) After installing the BClZO ceramic target, close the chamber door, turn on the mechanical pump and the molecular pump to start vacuuming until the vacuum degree reaches 5×10 -6 Torr, start the substrate heating program, and heat the substrate to 60°C;

[0051] 4) Feed pure Ar into the growth chamber, adjust the air pressure to 12mTorr and start glowing, and pre-sputter for 5 minutes to remove impurities on the target surface;

[0052] 5) Open the sputtering baffle, adjust the growth pressure to 8mTorr, turn on the RF power supply, set the power to 100W, and spu...

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Abstract

The invention discloses a non-metal co-doped ZnO transparent conductive film with high mobility. The film is a ZnO-based film grown on a flexible substrate, and its chemical composition is Zn 1-x-y A x B y O, where 0< x ≦0.50, 0< y ≦0.40, A is one of fluorine, chlorine, sulfur and selenium, B is one of boron and hydrogen, and the atomic ratio of A and B satisfies 1 <x:y≦10。制备该薄膜采用射频磁控溅射法，通过结合氢等离子处理和真空热退火的手段，从而制得导电性能良好的透明导电薄膜。本发明制备的薄膜结晶性能好，薄膜生长平整，光透过率在80%以上，电阻率可降至10-3 order of magnitude, square resistance can reach 81.9. It can be applied in the fields of front electrodes of solar cells, thin film transistors, ultraviolet detectors, transparent display screens and the like.< / x:y≦10。制备该薄膜采用射频磁控溅射法，通过结合氢等离子处理和真空热退火的手段，从而制得导电性能良好的透明导电薄膜。本发明制备的薄膜结晶性能好，薄膜生长平整，光透过率在80%以上，电阻率可降至10

Description

technical field [0001] The invention relates to a preparation method of a transparent conductive oxide film, in particular to a non-metal co-doped ZnO transparent conductive film with high mobility and a preparation method thereof. Background technique [0002] The transparent conductive film is a metal oxide-based semiconductor material, which is prepared into a transparent and conductive film material through a specific preparation process. The transparent conductive film combines the two properties of transparency and conductivity, and has broad application prospects in the optoelectronic industry. For quite a long time, research on transparent conductive films has mainly focused on ITO films (tin-doped In 2 o 3 ), ITO has excellent photoelectric properties: the transmittance of visible light at 550nm wavelength can reach more than 85%; low resistivity (10 -5 ~10 一3 Ωcm); wide band gap (Eg=3.5~4.3eV); infrared reflectance greater than 80%; ultraviolet absorption great...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C14/35C23C14/08C23C14/58
CPCC23C14/35C23C14/086C23C14/5806C23C14/5826
Inventor 朱丽萍李琴张翔宇
Owner ZHEJIANG UNIV
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