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CMOS image sensor

An image sensor and substrate technology, which is applied in the manufacture of electrical solid-state devices, semiconductor devices, and semiconductor/solid-state devices, etc., can solve the problems of reducing light sensitivity, affecting the performance of image sensors, and large light attenuation, and reducing the transmission distance, The effect of improving the display effect and increasing the sensitivity

Inactive Publication Date: 2016-07-13
思特威(上海)电子科技股份有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

For the photosensitive area, the distance from the chip surface to the photosensitive surface is relatively large, which makes the incident light have to go through a long distance to be absorbed by the photosensitive area. The angle between the normal direction of the imaging surface) cannot be too large, which affects the wide application of image sensors
[0004] In addition, during the propagation of light, due to the existence of different dielectric layers, the light will be reflected and refracted, resulting in loss of light and energy reduction, so that the number of electrons reaching the bottom of the photodiode from the chip surface is reduced, reducing the Light sensitivity, which affects the performance of the image sensor

Method used

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Embodiment 1

[0031] figure 1 A schematic cross-sectional view of a CMOS image sensor provided in Embodiment 1 of the present invention, as shown in figure 1 As shown, the present invention proposes a CMOS image sensor 10, which includes a peripheral circuit 11 and an internal circuit 12. The peripheral circuit 11 and the internal circuit 12 both include a substrate 100 and metal layers M1 and M2 on the substrate. ,...,Mn, figure 1 Only three layers are shown in the figure, the bottom metal layer M1, the middle metal layer M2 and the top metal layer M3, and the passivation layer 102 on the top metal layer M3, the passivation layer in the internal circuit 12 The thickness of 102 is smaller than the thickness of the passivation layer 102 in the peripheral circuit 11 .

[0032] The CMOS image sensor 10 further includes a dielectric layer 101 between the various metal layers and between the underlying metal layer M1 and the substrate 100 . In addition, a photodiode 121 is formed in the subst...

Embodiment 2

[0039] image 3 It is a flow chart of the manufacturing method of the CMOS image sensor provided by Embodiment 2 of the present invention, as image 3 As shown, the present invention proposes a kind of manufacturing method of CMOS image sensor, comprises the following steps:

[0040]Step S01: providing a substrate 100, and forming various metal layers on the substrate 100;

[0041] Step S02: depositing a passivation layer 102 on the top metal layer;

[0042] Step S03: Thinning the passivation layer 102 on the internal circuit 12 by etching.

[0043] Specifically, in step S01, a substrate 100 is provided, and the substrate 100 may be a silicon substrate, such as one of single crystal silicon, polycrystalline silicon or amorphous silicon, or silicon on insulator (Silicon On Insulator, SOI ), can also be a silicon germanium compound. In this embodiment, the substrate 100 is a silicon substrate. The silicon substrate includes a peripheral circuit 11 and an internal circuit 12...

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Abstract

The invention provides a CMOS image sensor and a manufacturing method thereof. A passivation layer on an inner circuit is thinned through etching, so that a photosensitive region of the inner circuit is thinner than a peripheral circuit, on the premise of not affecting metal wiring of the peripheral circuit and functions of the photosensitive region, the transmission distance from incident light of the photosensitive region to the surface of a photodiode is effectively reduced, and loss caused by photoelectron absorption and scattering is reduced in the optical path transmission process; a medium layer and the passivation layer on the photodiode are etched and filled with a high-refractive-index material, the incident light is totally reflected in the high-refractive-index material, loss, caused by reflection or refraction, of the incident light is reduced, light sensitivity of the photodiode is improved, and the image displaying effect is improved.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to a CMOS image sensor and a manufacturing method thereof. Background technique [0002] Image sensors are an important part of digital cameras. According to different components, it can be divided into two categories: CCD (ChargeCoupledDevice, charge-coupled device) and CMOS (ComplementaryMetal-OxideSemiconductor, metal-oxide-semiconductor element). With the continuous development of the manufacturing process of CMOS integrated circuits, especially the design and manufacturing process of CMOS image sensors, CMOS image sensors have gradually replaced CCD image sensors and become the mainstream. Compared with CMOS image sensors, it has the advantages of higher industrial integration and lower power. [0003] In the existing CMOS image sensor products, the processes of integrated circuit design companies and manufacturing plants around the world are not the same, but they hav...

Claims

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Application Information

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IPC IPC(8): H01L27/146H01L21/77
CPCH01L27/14643H01L27/14689
Inventor 邵泽旭
Owner 思特威(上海)电子科技股份有限公司