Modified polythiophene organic magnetic resistance film material, preparation method therefor and application thereof

A thin-film material, polythiophene technology, applied in semiconductor/solid-state device manufacturing, electrical components, electrical solid-state devices, etc., can solve the problems of poor electrical conductivity, low magnetoresistance response sensitivity, etc. Solve the effect of poor conductivity and enhanced magnetoresistance response

Inactive Publication Date: 2016-07-20
XINJIANG GOLDWIND SCI & TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the existing disclosed organic polymer magnetoresistive materials still have the disadvantages of relatively poor electrical conductivity and relatively low magnetoresistance response sensitivity in applications such as sensors.

Method used

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  • Modified polythiophene organic magnetic resistance film material, preparation method therefor and application thereof
  • Modified polythiophene organic magnetic resistance film material, preparation method therefor and application thereof
  • Modified polythiophene organic magnetic resistance film material, preparation method therefor and application thereof

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preparation example Construction

[0036] The invention provides a method for preparing an organic magnetoresistive thin film material, comprising the following steps:

[0037] 1) After mixing polythiophene compounds and condensed ring aromatic hydrocarbon derivatives in an organic solvent, a mixed solution is obtained;

[0038] 2) After the mixed solution obtained in the above steps is formed into a film, an organic magnetoresistive thin film is obtained.

[0039] In the present invention, the selection and ratio of raw materials in the preparation process of the organic magnetoresistive thin film material are optimized, unless otherwise specified, corresponding to the uniformity of the aforementioned organic magnetoresistive thin film material, and will not be repeated here.

[0040] In the invention, firstly, the polythiophene compound and the polycyclic aromatic hydrocarbon derivative are mixed in an organic solvent to obtain a mixed liquid.

[0041] The present invention is not particularly limited to the...

Embodiment 1

[0061] Preparation of Pentacene / 3-Hexyl-substituted Polythiophene Composite Organic Thin Films

[0062] First, set the doping ratio of 1%, and set the concentration of the prepared mixed solution to 30 mg / ml. By calculation, 1 ml of the solution contains 29.7 mg of 3-hexyl-substituted polythiophene and 0.3 mg of pentacene.

[0063] Using an electronic balance with an accuracy of 0.01 mg, weigh 30.0 mg of pentacene and dissolve it in 100.0 ml of o-dichlorobenzene solvent, accelerate the dissolution by heating and magnetic stirring, and prepare a 0.3 mg / ml pentacene solution.

[0064] 29.7 mg of 3-hexyl-substituted polythiophene was obtained by weighing with an electronic balance with an accuracy of 0.01 mg.

[0065]Use a 1.0mL pipette gun to take 1.0ml of the above-prepared pentacene solution, dissolve the above-mentioned weighed 29.7 mg of 3-hexyl-substituted polythiophene in this solution, accelerate the dissolution by heating, magnetic stirring, etc., and prepare 30mg / mL mi...

Embodiment 2

[0080] Preparation of Pentacene / 3-Hexyl-substituted Polythiophene Composite Organic Thin Films

[0081] Solution preparation process is identical with example 1.

[0082] Using a bar coater, spread it evenly on the electrode at a constant spreading speed. After the solvent o-dichlorobenzene volatilizes, a pentacene / 3-hexyl substituted polythiophene composite organic film is formed.

[0083] A pure 3-hexyl substituted polythiophene organic film without doping materials is prepared by using 3-hexyl substituted polythiophene according to the above concentration ratio.

[0084] Fabrication of Organic Magnetoresistive Thin Film Components on Flexible Substrates

[0085] see figure 2 , figure 2 A simplified diagram of the structure of a flexible organic diode electronic accessory with a magnetoresistive effect provided by an embodiment of the present invention.

[0086] figure 2 Polyethylene was selected as the base layer 04, 50 nanometers of indium tin oxide, 50 nanometers ...

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Abstract

The invention provides an organic magnetic resistance film material. The organic magnetic resistance film material is obtained after compounding a polythiophene compound and a polycyclic aromatic hydrocarbon derivative. According to the organic magnetic resistance film material, a polycyclic aromatic hydrocarbon organic small molecular compound is mixed with a polythiophene organic high molecular polymer, so that polythiophene organic high molecules can be doped and modified. The highest occupied orbital energy level of a dopant is higher than that of a doped object, so that hole carriers are blocked by the dopant in a transmission process of the doped object to form a "carrier trap", and due to the introduction of the "carrier trap", a more sensitive magnetic resistance effect can be generated; and meanwhile the polycyclic aromatic hydrocarbon dopant has higher carrier migration rate than the polythiophene doped object, so that the introduction of the dopant further enhances the conductivity of the doped object.

Description

technical field [0001] The invention relates to the technical field of magnetoresistance materials, in particular to a modified polythiophene-based organic magnetoresistance thin film material and its preparation method and application. Background technique [0002] The magnetoresistance effect (MagnetoresistanceEffect), also known as the magnetoresistance effect, refers to the phenomenon that the resistance value of some metals or semiconductors changes with the change of the applied magnetic field. The magnetoresistance effect is mainly divided into ordinary magnetoresistance, giant magnetoresistance, super giant magnetoresistance, anisotropic magnetoresistance, tunneling magnetoresistance effect and so on. In most metals, the change value of resistivity is positive, while the change value of resistivity of transition metals and metalloid alloys and saturated magnets is negative, especially semiconductors have large magnetoresistance anisotropy. Utilizing the magnetoresis...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L51/30H01L51/40H01L51/05
CPCH10K71/12H10K85/113H10K10/00
Inventor 谷航赵亮
Owner XINJIANG GOLDWIND SCI & TECH
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