Surface-modified three-dimensional network carbon fiber reinforced composite material and preparation method thereof
A technology for enhancing composite materials and surface modification, applied in chemical instruments and methods, metal material coating process, gaseous chemical plating, etc. The effect of improving adaptability, improving mechanical properties and improving thermal conductivity
- Summary
- Abstract
- Description
- Claims
- Application Information
AI Technical Summary
Problems solved by technology
Method used
Examples
Embodiment 1
[0037] Example 1: Diamond Modified Braided Carbon Fiber Reinforced Aluminum Matrix Composite
[0038] Include the following steps:
[0039] (1) Put the three-dimensional braided carbon fiber (with a pore size of 500 μm and a porosity of 90%) in an acetone solution for ultrasonic cleaning;
[0040] (2) Using magnetron sputtering method to sputter W film on the surface of three-dimensional woven carbon fiber, wherein the thickness of W film is 150nm; using hot wire CVD to deposit diamond film, deposition process parameters: hot wire distance 6mm, substrate temperature 800 ℃, heat Filament temperature 2200°C, deposition pressure 3KPa, CH 4 / H 2 The volume flow ratio is 1:99, and the thickness of the diamond film is 120 μm; the Mo / Cu composite film layer is sputtered on the surface of the three-dimensional network skeleton of the core diamond by magnetron sputtering, wherein the thickness of the Mo film is 50 nm, and the thickness of the Cu film is 100 nm;
[0041] (3) Put the ...
Embodiment 2
[0042] Embodiment two: diamond / graphene modified braided carbon fiber reinforced PMMA composite material
[0043] Include the following steps:
[0044] (1) Put the three-dimensional braided carbon fiber (with a pore size of 300 μm and a porosity of 80%) in an acetone solution for ultrasonic cleaning;
[0045] (2) The diamond film is deposited by hot wire CVD. The deposition process parameters are: hot wire distance 6mm, substrate temperature 800°C, hot wire temperature 2200°C, deposition pressure 3KPa, CH 4 / H 2 The volume flow ratio is 1:99, and the thickness of the diamond film is 200 μm; the graphene film layer is grown in situ on the diamond surface by plasma-assisted chemical vapor deposition, and the deposition parameters are: H 2 / CH 4 Atmosphere, CH 4 The gas mass flow percentage is 10%, the growth temperature is 900°C, and the growth pressure is 5×10 5 Pa, plasma current density 20mA / cm 2 , the magnetic field strength in the deposition area is 200 gauss, and the...
Embodiment 3
[0047] Example 3: Diamond Modified Braided Carbon Fiber Reinforced Aluminum Alloy Matrix Composite
[0048] Include the following steps:
[0049] (1) Put the three-dimensional braided carbon fiber (with a pore size of 150 μm and a porosity of 60%) in an acetone solution for ultrasonic cleaning;
[0050] (2) Sputtering a Mo film on the surface of the cored diamond three-dimensional network skeleton using evaporation plating technology, wherein the thickness of the Mo film is 50nm; using hot wire CVD to deposit the diamond film, deposition process parameters: hot wire distance 6mm, substrate temperature 750°C, Filament temperature 2200°C, deposition pressure 3KPa, CH 4 / H 2 The volume flow ratio is 1:99, and the thickness of the diamond film is 80 μm; the Mo / Ni / Cu composite film is sputtered on the surface of the three-dimensional network skeleton of the core diamond by magnetron sputtering, wherein the thickness of the Mo film is 50nm, and the thickness of the Ni film is 50nm...
PUM
Property | Measurement | Unit |
---|---|---|
pore size | aaaaa | aaaaa |
diameter | aaaaa | aaaaa |
thickness | aaaaa | aaaaa |
Abstract
Description
Claims
Application Information
- R&D Engineer
- R&D Manager
- IP Professional
- Industry Leading Data Capabilities
- Powerful AI technology
- Patent DNA Extraction
Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.
© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com