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Manganese tin oxide based transparent conducting oxide and transparent conductive film and method for fabricating transparent conductive film using the same

一种透明导电膜、锡氧化物的技术，应用在氧化物导体、氧化锰/氢氧化锰、绝缘载体上的导电层等方向，能够解决金属层不能均匀蒸镀、表面粗糙度大、电阻增加等问题，达到稳定电特性及光学特性、低费用、优秀电特性的效果

Inactive Publication Date: 2016-08-10
KOREA INST OF SCI & TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

In the case of a transparent conductive oxide (TCO) thin film in a crystalline form such as single crystal or polycrystal, since the surface roughness is large (for example, the root mean square (RMS) is tens of nm), such as figure 1 The metal layer shown cannot be evaporated uniformly, so the electron movement path in the metal layer is restricted by the surface, and finally the phenomenon of increased resistance caused by reduced mobility

Method used

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  • Manganese tin oxide based transparent conducting oxide and transparent conductive film and method for fabricating transparent conductive film using the same
  • Manganese tin oxide based transparent conducting oxide and transparent conductive film and method for fabricating transparent conductive film using the same
  • Manganese tin oxide based transparent conducting oxide and transparent conductive film and method for fabricating transparent conductive film using the same

Examples

Experimental program
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Effect test

Embodiment 1

[0040] Example 1: Determination of optimal composition by continuous composition diffusion method

[0041] A glass substrate of 75 mm × 15 mm is located in an off-axis continuos compositions-spread sputtering device (off-axis continuos compositions-spread sputtering device) in which two sputtering guns (sputter guns) are arranged in a 90-degree manner. 2 inches of SnO are installed in the shooting gun 2 target and MnO 2 target. Use rotary pumps and turbomolecular pumps to form 2×10 -6 After a high vacuum atmosphere of about Torr, argon (Ar) gas is injected, and sputtering is performed at a pressure of 45 mtorr. At this time, SnO 2 Target with 40W power, MnO 2 The targets were each sputtered at a power of 10 W for 1 hour, and pre-sputtering was performed for 15 minutes before the thin film was deposited.

[0042] A thin film layer is formed on a glass substrate by sputtering, with SnO 2 target and MnO 2 target is used to form a Mn x sn 1-x MnO with continuous composit...

Embodiment 2

[0046] Embodiment 2: Evaporation and characteristics of multilayer transparent conductive film

[0047] On the glass substrate, transparent conductive oxide (TCO), metal thin film and transparent conductive oxide (TCO) are sequentially evaporated. The transparent conductive oxide is SnO doped with Mn 2 , The metal thin film is Ag. That is, forming Mn-doped SnO on a glass substrate 2 / Ag / Mn doped SnO 2 The multilayer transparent conductive film with the structure is vapor-deposited using the sputtering method at room temperature.

[0048] For Mn-doped SnO 2 , using a target pair of SnO containing 2.59% Mn 2 For comparison, SnO containing 2.59% Mn was vapor-deposited 2 and SnO 2 , to form SnO doped with 2.59wt% Mn 2 / Ag / SnO doped with 2.59wt% Mn 2 , SnO doped with 10wt% Mn 2 / Ag / SnO doped with 10wt% Mn 2 and SnO 2 / Ag / SnO 2 Three types of multilayer transparent conductive films.

[0049] Using an on-axis sputtering apparatus, vapor deposition was performed under an...

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Abstract

The ivnetion relates to a manganese tin oxide-based transparent conducting oxide (TCO) with an optimized composition, which has low surface roughness, low sheet resistance and high transmittance even when vapor deposition at room temperature, a multilayer transparent conductive film using the same and a method for fabricating the same. The manganese tin oxide-based transparent conducting oxide has a composition of Mn<x>Sn<1-x>O (0<x<=0.055). The multilayer transparent conductive film includes: the manganese tin oxide-based transparent conducting oxide having the composition of Mn<x>Sn<1-x>O (0<x<=0.055), a metal thin film deposited on the manganese tin oxide-based transparent conducting oxide, and a manganese tin oxide-based transparent conducting oxide having a composition of Mn<x>Sn<1-x>O (0<x<=0.055) deposited on the metal thin film.

Description

technical field [0001] The present invention relates to a manganese tin oxide-based transparent conductive oxide, a multilayer transparent conductive film using the same, and a method for preparing the same. Manganese-tin oxide-based transparent conductive oxide (TCO) having an optimal composition with surface resistance and high transmittance characteristics, a multilayer transparent conductive film using the same, and a preparation method thereof. Background technique [0002] Transparent Conducting Oxide (TCO, Transparent Conducting Oxide) is an important material used in flat panel displays (PDPs), light emitting diodes, various touch panels, and the like. Recently, as the development of optical devices, thin-film transistors, thin-film solar cells, and the like is actively carried out, attention to transparent electrodes is increasing, and research on them is also actively carried out. Research and commercialization related to transparent conductive oxide thin film mat...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01B1/08H01B5/14H01B13/00C01G19/02C01G45/02
CPCC01G19/02C01G45/02H01B1/08H01B5/14H01B13/00C01P2002/50C01P2002/54H01B1/02H01L31/022466H01L31/1884H01L33/42H01L29/43Y02E10/50
Inventor 崔志远崔源国金镇相任咳摞
Owner KOREA INST OF SCI & TECH
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