Preparation method of boron nitride composite polishing solution

A composite polishing and boron nitride technology, which is applied in the direction of polishing compositions containing abrasives, can solve problems such as difficult to overcome hard disk surface, micro scratches and particle residue, computer hard disk damage, etc., and achieve excellent anti-corrosion effect and low production cost. Low, good polishing effect

Inactive Publication Date: 2016-08-17
UNIV OF JINAN
View PDF8 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0006] The traditional chemical mechanical polishing (CMP) technology is an important means of computer hard disk processing at present. It realizes the removal of materials and the flattening of the workpiece surface under the combination of chemical and mechanical effects. Although the material removal rate of the workpiece is high, the polishing process Due to the high hardness of nano-abrasive particles, easy agglomeration, and poor dispersion, the surface of the workpiece is prone to damage such as dents, corrosion, micro-scratches, and particle residues. However, it cannot well meet the current requirements for the surface smoothing process of atomic-level materials on the surface of hard disks.
[0007] The existing polishing liquid is acidic and corrosive to a certain extent. It is easy to damage the edge of the computer hard disk when it is applied to the computer hard disk, and it is easy to affect the life of the polishing machine.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0023] (1) BN-Cr 2 o 3 -ZrO 2 Preparation of the compound: Add water: 33 mL, ammonium dichromate: 22 g, zirconium oxychloride: 16 g, nano-boron nitride: 29 g to the grinding machine, turn on the grinding machine, and grind at a speed of 500 rpm 5h, dried at 100°C, then baked at 850°C for 11h, cooled, and crushed by airflow to obtain BN-Cr 2 o 3 -ZrO 2 Composite, its particle size is 20~100nm;

[0024] (2) Preparation of boron nitride composite polishing solution: In the reactor, add water: 74 mL, lignosulfonate: 3.0 g, isopropanol: 4 mL, potassium bromate: 3 g, BN-Cr 2 o 3 -ZrO 2 Composite: 16 g, stirred and reacted for 5 hours at a speed of 300 rpm to obtain a boron nitride composite polishing solution.

Embodiment 2

[0026] (1) BN-Cr 2 o 3 -ZrO 2 Preparation of the compound: Add water: 30 mL, ammonium dichromate: 26 g, zirconium oxychloride: 20 g, nano-boron nitride: 24 g to the grinder, turn on the grinder, and grind at a speed of 550 rpm 4h, dried at 100°C, then baked at 900°C for 10h, cooled, and crushed by air flow to obtain BN-Cr 2 o 3 -ZrO 2 Composite, its particle size is 20~100nm;

[0027] (2) Preparation of boron nitride composite polishing solution: In the reactor, add water: 75 mL, lignosulfonate: 5 g, isopropanol: 5 mL, potassium bromate: 1 g, BN-Cr 2 o 3 -ZrO2 Composite: 14g, stirred and reacted for 4 hours at a speed of 300 r / min to obtain a boron nitride composite polishing solution.

Embodiment 3

[0029] (1) BN-Cr 2 o 3 -ZrO 2 Preparation of the compound: Add water: 38 mL, ammonium dichromate: 18 g, zirconium oxychloride: 12 g, nano-boron nitride: 32 g to the grinder, turn on the grinder, and grind at a speed of 600 rpm 6h, dried at 100°C, then baked at 880°C for 12h, cooled, and crushed by airflow to obtain BN-Cr 2 o 3 -ZrO 2 Composite, its particle size is 20~100nm;

[0030] (2) Preparation of boron nitride composite polishing solution: In the reactor, add water: 70 mL, lignosulfonate: 2.0 g, isopropanol: 3 mL, potassium bromate: 2 g, BN-Cr 2 o 3 -ZrO 2 Composite: 22 g, stirred and reacted for 6 hours at a speed of 300 rpm to obtain a boron nitride composite polishing solution.

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

PropertyMeasurementUnit
particle diameteraaaaaaaaaa
Mohs hardnessaaaaaaaaaa
Mohs hardnessaaaaaaaaaa
Login to view more

Abstract

The invention discloses a preparation method of a boron nitride composite polishing solution. The preparation method is characterized in that by mass, 28-38% of water, 18-26% of ammonium dichromate, 12-20% of zirconium oxychloride and 24-32% of nano boron nitride are added to a grinding machine, the grinding machine is started, and a BN-Cr2O3-ZrO2 compound is prepared through grinding, drying and calcining; by mass, 70-78% of water, 2.0-4.0% of lignosulfonate, 3.0-5.0% of isopropyl alcohol, 1.0-5.0% of potassium bromate and 14-22% of BN-Cr2O3-ZrO2 compound are added to a reactor, a stirring reaction is conducted for 4-6 h at the rotating speed of 300 r/min, and the boron nitride composite polishing solution is obtained. The preparation process is simple, conditions are easy to control, the production cost is low, and industrial production is easy. In the polishing process, the advantages of being good in liquid polishing effect, free of scratches, high in flatness, small in dosage, resistant to abrasion and easy to wash are achieved.

Description

technical field [0001] The present invention relates to the technical field of preparation of a polishing liquid, in particular to a preparation method of a boron nitride composite polishing liquid [0002] And used in the polishing of disk substrates and magnetic heads. Background technique [0003] The disk substrate is generally made of aluminum-magnesium alloy or glass material. With the rapid development of the computer industry, especially with the rapid increase in the storage density of computer disks, the magnetic head is required to read smaller and weaker signals. Therefore, the magnetic head and The distance between the disk media is further reduced to increase the strength of the output signal. At present, the gap between the magnetic head and the magnetic disk has been reduced to about 10nm. The surface roughness, scratches and impurity particles of the magnetic head and magnetic disk will cause fatal damage to the computer magnetic disk. It is expected that ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Applications(China)
IPC IPC(8): C09G1/02
CPCC09G1/02
Inventor 李慧芝许崇娟卢燕
Owner UNIV OF JINAN
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products