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A method for introducing molybdenum when preparing molybdenum carbide crystals by mpCVD

A molybdenum carbide, crystal technology, applied in chemical instruments and methods, crystal growth, from chemical reactive gases, etc., can solve problems such as difficulty in introducing molybdenum

Active Publication Date: 2018-05-01
上海顺心谷半导体科技有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] In order to overcome the deficiencies in the prior art, the object of the present invention is to provide a method for introducing molybdenum when utilizing MPCVD to prepare molybdenum carbide crystals, which solves the difficult problem of molybdenum introduction in microwave plasma chemical vapor deposition (MPCVD) problems, and can better control the intake of molybdenum, to obtain purer molybdenum carbide crystals

Method used

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  • A method for introducing molybdenum when preparing molybdenum carbide crystals by mpCVD
  • A method for introducing molybdenum when preparing molybdenum carbide crystals by mpCVD
  • A method for introducing molybdenum when preparing molybdenum carbide crystals by mpCVD

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Embodiment 1

[0023] A method for introducing molybdenum when utilizing MPCVD to prepare molybdenum carbide crystals, comprising the steps:

[0024] The first step is to prepare the device for preparing molybdenum carbide crystals; first, the silicon wafer is ultrasonically cleaned (ultrasonic cleaning with acetone or ethanol solvent) to remove oil stains; then the cleaned silicon wafer is placed on the substrate stage, and the substrate stage is located on the In the cavity (the silicon chip is also located in the cavity of the cavity), the cavity is evacuated (to a vacuum degree of 0.1-10Pa);

[0025] The second step is to feed hydrogen and methane into the chamber (the volume ratio of hydrogen and methane is 30:1-200:1), adjust the gas flow, microwave power and air pressure, so that the gas (hydrogen and methane) absorbs microwave energy to generate Plasma (microwave plasma);

[0026] The process parameters for microwave plasma generation are as follows: hydrogen flow: 150 sccm, methane...

Embodiment 2

[0032] A method for introducing molybdenum when utilizing MPCVD to prepare molybdenum carbide crystals, comprising the steps:

[0033] The first step is to prepare the device for preparing molybdenum carbide crystals; first, the silicon wafer is ultrasonically cleaned (ultrasonic cleaning with acetone or ethanol solvent) to remove oil stains; then the cleaned silicon wafer is placed on the substrate stage, and the substrate stage is located on the In the cavity (the silicon chip is also located in the cavity of the cavity), the cavity is evacuated (to a vacuum degree of 0.1-10Pa);

[0034] The second step is to feed hydrogen and methane into the chamber (the volume ratio of hydrogen and methane is 30:1-200:1), adjust the gas flow, microwave power and air pressure, so that the gas (hydrogen and methane) absorbs microwave energy to generate Plasma (microwave plasma);

[0035] The process parameters of microwave plasma generation are as follows: hydrogen flow: 150 sccm, methane ...

Embodiment 3

[0041] A method for introducing molybdenum when utilizing MPCVD to prepare molybdenum carbide crystals, comprising the steps:

[0042] The first step is to prepare the device for preparing molybdenum carbide crystals; first, the silicon wafer is ultrasonically cleaned (ultrasonic cleaning with acetone or ethanol solvent) to remove oil stains; then the cleaned silicon wafer is placed on the substrate stage, and the substrate stage is located on the In the cavity (the silicon chip is also located in the cavity of the cavity), the cavity is evacuated (to a vacuum degree of 0.1-10Pa);

[0043] The second step is to feed hydrogen and methane into the chamber (the volume ratio of hydrogen and methane is 30:1-200:1), adjust the gas flow, microwave power and air pressure, so that the gas (hydrogen and methane) absorbs microwave energy to generate Plasma (microwave plasma);

[0044] The process parameters for microwave plasma generation are as follows: hydrogen flow: 150 sccm, methane f...

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Abstract

The invention belongs to the field of two-dimensional crystals and discloses a molybdenum introducing method for preparing a molybdenum carbide crystal through MPCVD (Microwave Plasma Chemical Vapor Deposition). The method is characterized by comprising the following steps that firstly, ultrasonic cleaning is carried out on a silicon slice, the washed silicon slice is placed on a substrate table which is located in a cavity, and the cavity is vacuumized; secondly, hydrogen and methane are introduced into the cavity, and the gas flow, the microwave power and the air pressure are adjusted to enable the gases to absorb the microwave energy to produce plasmas; thirdly, a pulsed power source is turned on, the voltage between the molybdenum electrode and the substrate table in the cavity is adjusted so that arc discharge can be produced between the molybdenum electrode and the substrate table, and the pulsing time is adjusted to control the production time of arc light; fourthly, after the reaction is finished, the pulse power source is turned off, a sample is taken out after a chamber in the cavity cools, and the molybdenum carbide crystal is obtained. The method solves the problem that molybdenum is difficult to introduce in the MPCVD; the intake of molybdenum can be controlled well, and the pure molybdenum carbide crystal is obtained.

Description

technical field [0001] The invention belongs to the field of two-dimensional crystal preparation, and in particular relates to a method for introducing molybdenum when preparing molybdenum carbide crystals by microwave plasma chemical vapor deposition (MPCVD). Background technique [0002] Transition metal carbides (TMCs), consisting of carbon atoms bonded to metal atoms in a metal lattice, are a class of materials that combine the properties of metals and ceramics. On the one hand, TMCs exhibit extremely high strength and hardness, high melting point and stability, acid and alkali corrosion resistance, high electrical and thermal conductivity, and low chemical reactivity; on the other hand, TMCs exhibit noble metal-like catalytic activity. In addition, molybdenum carbide (Mo 2 C), tungsten carbide (W 2 C), tantalum carbide (TaC), etc. exhibit low-temperature superconducting properties. [0003] At present, the introduction methods of molybdenum when preparing molybdenum...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C30B29/36C30B25/02
CPCC30B25/02C30B29/36
Inventor 马志斌丁康俊高攀赵洪阳宋修曦
Owner 上海顺心谷半导体科技有限公司