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P-type alpha-MgAgSbSn thermoelectric material with high optimum value and preparation method

A technology of thermoelectric materials and raw materials, which is applied in the direction of thermoelectric device node lead-out materials, etc., can solve the problems of unfavorable large-scale commercial application, scarce element reserves, poor mechanical properties, etc., and achieve low raw material prices, simple preparation processes, and mechanical good performance

Inactive Publication Date: 2016-09-28
ZHEJIANG UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] Bismuth telluride single crystals are generally used commercially, and the optimal thermoelectric figure of merit ZT of commercialized bismuth telluride-based single-crystal thermoelectric materials is around 1, but commercial single-crystal bismuth telluride-based thermoelectric materials have poor mechanical properties and are easy to decompose. and its constituent element tellurium is a rare earth element, and the reserve of this element on the earth's crust is scarce, which is not conducive to large-scale commercial application
[0006] At present, there are few studies on other base-based low-temperature thermoelectric materials, and it is urgent to develop a new type of low-temperature thermoelectric material with good mechanical properties and not easy to dissociate.

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  • P-type alpha-MgAgSbSn thermoelectric material with high optimum value and preparation method

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0026] Raw materials were stoichiometrically MgAgSb 0.9975 sn 0.0025 After calculation and weighing, place in a vacuum carbon-coated quartz tube with a vacuum of 10 -4 -10 -1 Pa, smelting at a high temperature of 1000°C for 10 hours to obtain ingots, and then use mechanical ball milling to crush the ingots to obtain micron-sized particles (particle size diameter: 200nm-10.0μm), and then use spark plasma sintering method to sinter at 450°C and 60MPa. 5min, followed by annealing in vacuum at 270°C for 1 week to obtain the final sample.

[0027] Adopt RigakuD / MAX-2550PC type X-ray (XRD) to carry out phase analysis to the sample that present embodiment makes, as figure 1 Shown, and confirmed as the α-MgAgSb-based structure, that is, the tetragonal structure (I-4c2), the space group number is 120.

[0028] According to the thermal diffusivity measured by the Netzsch LFA-457 laser pulse thermal analyzer, the thermal conductivity κ was calculated by comparing the measured specifi...

Embodiment 2

[0030] After weighing the raw materials according to the stoichiometric ratio of MgAgSb, place them in a vacuum carbon-coated quartz tube with a vacuum of 10 -4 -10 -1 Pa, smelting at a high temperature of 1000°C for 10 hours to obtain ingots, and then use mechanical ball milling to crush the ingots to obtain micron-sized particles (particle size diameter: 200nm-10.0μm), and then use spark plasma sintering method to sinter at 450°C and 60MPa. 5min, followed by annealing in vacuum at 270°C for 1 week to obtain the final sample.

[0031] The thermal conductivity of the sample prepared in this example is κ=1.01W·m at 525K -1 K -1 , thermoelectric potential coefficient α=193μV / K, electrical conductivity σ=46241S / m, calculated ZT value is 0.89.

Embodiment 3

[0033] Raw materials were stoichiometrically MgAgSb 0.995 sn 0.005 After calculation and weighing, place in a vacuum carbon-coated quartz tube with a vacuum of 10 -4 -10 -1 Pa, smelting at a high temperature of 1000°C for 10 hours to obtain ingots, and then use mechanical ball milling to crush the ingots to obtain micron-sized particles (particle size diameter: 200nm-10.0μm), and then use spark plasma sintering method to sinter at 450°C and 60MPa. 5min, followed by annealing in vacuum at 270°C for 1 week to obtain the final sample.

[0034] The thermal conductivity of the sample prepared in this example is κ=1.06W·m at 525K -1 K -1 , thermoelectric potential coefficient α=186μV / K, conductivity σ=53483S / m, calculated ZT value is 0.91.

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Abstract

The invention discloses a P-type alpha-MgAgSbSn thermoelectric material with a high optimum value. The P-type alpha-MgAgSbSn thermoelectric material comprises raw material compositions of MgAgSb1-xSnx, wherein x=0.001-0.05, x represents atomic percent. Meanwhile, the invention also discloses a preparation method of the P-type alpha-MgAgSbSn thermoelectric material with the high optimum value. The preparation method comprises the following steps of: (1) weighing raw materials which inlcude magnesium, silver, stibonium and stannum according to the stoichiometric ratio of MgAgSb1-xSnx, vacuum-melting to obtain a cast ingot, wherein X=0-0.05; (2) crushing the cast ingot obtained in step (1) into particles, sintering and annealing to obtain the P-type alpha-MgAgSbSn thermoelectric material. A preparation process disclosed by the invention is simple; the prepared P-type alpha-MgAgSbSn thermoelectric material is stable in property and good in repeatability; the contents of elements forming the material are abundant in the earth crust, the industrial cost of the elements is low; a maximum zT value of the P-type alpha-MgAgSbSn thermoelectric material reaches 1.0 at 525K.

Description

technical field [0001] The invention belongs to the field of semiconductor thermoelectric materials, in particular to a P-type α-MgAgSbSn thermoelectric material with a high figure of merit in a low temperature region and a preparation method thereof. Background technique [0002] A thermoelectric material is a semiconductor material that directly converts electrical energy and thermal energy through the movement of carriers (electrons or holes) inside the material. When there is a temperature difference between the two sections of the thermoelectric material, the thermoelectric material converts heat energy into electrical energy for output. Conversely, when a current is passed through the thermoelectric material, the hot spot material converts electrical energy into heat energy, and one end releases heat and the other end absorbs heat to achieve a cooling effect. Thermoelectric materials have a wide range of application backgrounds in refrigeration or power generation. Th...

Claims

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Application Information

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IPC IPC(8): C22C30/04C22C1/02B22F3/105H01L35/18
CPCC22C1/02C22C12/00C22C30/04B22F3/105B22F2003/1051H10N10/853
Inventor 朱铁军应娉君赵新兵
Owner ZHEJIANG UNIV
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