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Method for preparing sulfur-doped graphene thin films

A technology of sulfur-doped graphene and graphene, applied in gaseous chemical plating, metal material coating process, coating and other directions, can solve problems such as increasing the preparation process of doped graphene film, and achieve large-scale industrial production , the preparation cost is low, the preparation process is simple and controllable

Inactive Publication Date: 2016-10-12
UNIV OF ELECTRONIC SCI & TECH OF CHINA
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Liang Chen and others from the Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences disclosed a method for sulfur-doping graphene with a sulfur source gas in the patent application number 201310080785.3. The method of doping, which is a post-treatment doping of graphene, needs to prepare a graphene film before doping, which greatly increases the preparation process of doped graphene film

Method used

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  • Method for preparing sulfur-doped graphene thin films
  • Method for preparing sulfur-doped graphene thin films
  • Method for preparing sulfur-doped graphene thin films

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0036] Step A: Wash the copper foil with a thickness of 25 microns and an area of ​​10 cm × 10 cm with 30% dilute hydrochloric acid, deionized water, and absolute ethanol in sequence, each cleaning time is 5 minutes, and finally use Blow dry with nitrogen; figure 1As shown, the cleaned copper foil is placed in the central temperature zone of the reaction chamber of the chemical vapor deposition system, and the central temperature zone of the reaction chamber of the chemical vapor deposition system is used as the first heating zone, and 200 mg of thianthrene is weighed and placed in the In the sample boat, the sample boat is placed at the front end of the first heating zone, and is insulated from the first heating zone, and the sample boat is heated by a heating belt, and the heating belt is used as the second heating zone;

[0037] Step B: Use a mechanical pump to pump the pressure of the reaction chamber of the chemical vapor deposition system to 5 Pa, and then introduce a mi...

Embodiment 2

[0044] Step A: Wash the copper foil with a thickness of 25 microns and an area of ​​10 cm × 10 cm with 30% dilute hydrochloric acid, deionized water, and absolute ethanol in sequence, each cleaning time is 5 minutes, and finally use Blow dry with nitrogen; figure 1 As shown, the cleaned copper foil is placed in the central temperature zone of the reaction chamber of the chemical vapor deposition system, and the central temperature zone of the reaction chamber of the chemical vapor deposition system is used as the first heating zone, and 100 mg of thianthrene is weighed and placed in the In the sample boat, the sample boat is placed at the front end of the first heating zone, and is insulated from the first heating zone, and the sample boat is heated by a heating belt, and the heating belt is used as the second heating zone;

[0045] Step B: Use a mechanical pump to pump the pressure of the reaction chamber of the chemical vapor deposition system to 5 Pa, and then introduce a m...

Embodiment 3

[0052] Step A: Wash the copper foil with a thickness of 25 microns and an area of ​​50 cm × 20 cm with 30% dilute hydrochloric acid, deionized water, and absolute ethanol in sequence, each cleaning time is 5 minutes, and finally use Blow dry with nitrogen; figure 1 As shown, the cleaned copper foil is placed in the central temperature zone of the reaction chamber of the chemical vapor deposition system, and the central temperature zone of the reaction chamber of the chemical vapor deposition system is used as the first heating zone, and 100 mg of thianthrene is weighed and placed in the In the sample boat, the sample boat is placed at the front end of the first heating zone, and is insulated from the first heating zone, and the sample boat is heated by a heating belt, and the heating belt is used as a second heating zone;

[0053] Step B: Use a mechanical pump to pump the pressure of the reaction chamber of the chemical vapor deposition system to 5 Pa, and then feed a mixed ga...

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Abstract

The invention discloses a method for preparing sulfur-doped graphene thin films and relates to the field of novel two-dimensional nano material preparing. The method comprises the following steps that a metal substrate and thianthrene are placed in mutually heat-insulated heating zones of a reaction chamber of a chemical vapor deposition system correspondingly; mixed gas is injected into the reaction chamber under the vacuum condition; the metal substrate is subjected to heat preservation at the preparation temperature of graphene thin films after being subjected to high-temperature annealing treatment, and then the thianthrene is heated to be vaporized and then is conveyed to the metal substrate to react through the mixed gas; and finally the sulfur-doped graphene thin films are prepared out on the metal substrate. According to the method for preparing the sulfur-doped graphene thin films, the preparation process is simple, the cost is low, large-scale industrial production can be achieved, and the raw materials are environmentally friendly and free of pollution; the layer number, the doping content and the area of the sulfur-doped graphene thin films prepared through the method can be flexibly adjusted by controlling related parameters, accordingly, the sulfur-doped graphene thin films with different natures are prepared, and the important value in the basic scientific research field, sensors and other practical application aspects is achieved.

Description

technical field [0001] The invention relates to the field of preparation of novel two-dimensional nanomaterials, in particular to a method for preparing a large-area sulfur-doped graphene film based on the principle of chemical vapor deposition. Background technique [0002] Since the preparation of graphene by mechanical exfoliation method in 2004 by Professors Andre Heim and Konstantin Novoselov of the University of Manchester, UK, more and more excellent properties of graphene have been confirmed by the laboratory. Studies have shown that graphene films have excellent electrical, optical, and electrochemical properties, such as high carrier mobility, extremely high light transmittance, and specific surface area. Therefore, graphene films can be widely used in the fields of semiconductor, energy storage and sensing. [0003] The conduction band and valence band of intrinsic graphene intersect at the Fermi level, where the carriers exhibit a linear dispersion relationship....

Claims

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Application Information

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IPC IPC(8): C23C16/26C23C16/448C23C16/01C23C16/02
CPCC23C16/01C23C16/0209C23C16/26C23C16/4488
Inventor 陈远富周金浩刘竞博戚飞郑斌杰贺加瑞王新强李谦李萍剑张万里
Owner UNIV OF ELECTRONIC SCI & TECH OF CHINA
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