Amorphous silicon thin film solar cell and manufacturing method thereof

Abstract

An amorphous silicon thin-film solar cell and a manufacturing method thereof, wherein the amorphous silicon thin-film solar cell is composed of a flexible PET substrate layer, a SiO2 light-trapping layer, a first electrode TCO layer, a p-type amorphous silicon layer, and a p-type amorphous silicon layer connected in sequence. Type buffer layer, i-type amorphous silicon layer, n-type amorphous silicon layer, second electrode TCO layer and back reflection layer. The preparation method includes: providing a flexible PET substrate layer; sequentially depositing a SiO2 light-trapping layer, a first electrode TCO layer, a p-type amorphous silicon layer, a p-type buffer layer, an i-type amorphous silicon layer, An n-type amorphous silicon layer, a second electrode TCO layer and a back reflection layer. The photoelectric conversion efficiency of the amorphous silicon thin-film solar cell of the present invention reaches 10-14%, which is 3-8% higher than that of the existing single-junction amorphous silicon thin-film solar cell, and effectively prevents the intrinsic layer i-type The amorphous silicon layer and the n-type amorphous silicon layer are polluted and suitable for mass production.

Description

technical field [0001] The invention relates to the technical field of solar energy development, in particular to an amorphous silicon thin-film solar cell and a manufacturing method thereof. Background technique [0002] Amorphous silicon is a semiconductor material that exists in the form of an amorphous element. Compared with crystalline silicon, it has a wider optical absorption range and lower product manufacturing costs, and can be used to manufacture photovoltaic cells in large quantities. By doping +5-valent and +3-valent elements such as nitrogen and phosphorus, p-type and n-type amorphous silicon can be obtained respectively. Restricted by factors such as design and manufacturing technology, the conversion efficiency of single-junction amorphous silicon thin-film solar cells in industrialization can only reach 6~7%, which needs to be further improved. , has always been a problem that seriously affects the service life of the battery. [0003] For single-junction...

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Problems solved by technology

[0004] The thin-film solar cell disclosed in Chinese patent CN201510407757.7 uses mesh metal nanowires instead of semiconductor transparent conductive film, which can greatly reduce the resistance of the film layer under light-transmitting conditions and improve the conversion efficiency of the solar cell. However, the mesh of the cell The width between the metal nanowires is 5mm, which will create gaps in the middle of the nanowires. At the same time, the conductive layer is in contact with the substrate and the photoelectric absorption layer, which will cause pollution between the photoelectric absorption layer and the substrate, and reduce the service life of the solar cell.

However, the solar cell does not have a sufficient light-trapping structure, and the details of the anti-reflection layer are not disclosed in detail;

[0006] Chinese patent CN201110315055.8 discloses a manufacturing method of amorphous silicon thin-film solar cells using physical vapor deposition to deposit silicon-based thin films, which has the advantages of simple process and low pollution, but the design of the cell structure does not consider the p-i interface band gap difference;

[0007] Chinese patent CN201220678505.X discloses an amorphous silicon thin-film solar cell, which adopts an anti-reflection layer structure to increase the incident rate of light, but uses plasma-enhanced chemical vapor deposition to manufacture silicon-based thin films, which seriously pollutes the environment. And lack of light trapping structure composed of electrode layer and back reflection layer

[0008] U.S. Patent US009040333B2 discloses a method for manufacturing amorphous silicon thin-film solar cells. Using plasma vapor deposition technology, the structure of a single-cell cell obtained is a flexible substrate-metal layer-first electrode layer-p-i-n layer-second electrode layer, Due to the application of flexible substrates, the battery is more suitable for mass production; the disadvantages of this method are also the use of chemical vapor deposition technology, which is complicated in process, high in cost and pollutes the environment, and the conversion of amorphous silicon thin film solar cells obtained by this method Efficiency and service life are not high

[0009] The manufacturing methods of thin-film solar cells disclosed in the above-mentioned patents mostly use chemical vapor deposition technology. The reaction gas of this technology is flammable and explosive gas, such as hydrogen, silane, etc., and the manufacturing process will also produce toxic tail gas to pollute the environment, and the operation The process is complex and has high technical requirements for operators, so the production cost is high, which is not conducive to mass production at low cost

In addition, the lifetime and conversion efficiency of thin-film solar energy still need to be further improved

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