Epitaxial wafer used for schottky diode and preparation method for epitaxial wafer

Abstract

The invention discloses an epitaxial wafer used for a schottky diode and a preparation method for the epitaxial wafer. The epitaxial wafer used for the schottky diode comprises a substrate, a GaN two-dimensional growth layer, a SiN<x> template layer, a GaN recovery layer, a heavily-doped nGaN layer, and a lightly-doped nGaN layer which are arranged in a laminated manner in sequence; the epitaxial wafer also comprises an InAlN cap layer which covers the other side face, which deviates from one side of the heavily-doped nGaN layer, of the lightly-doped nGaN layer, wherein the substrate is a sapphire plain film substrate with an AlN cover layer; the SiN<x> template layer is formed by in-situ growth of SiH<4> and NH<3> on the other side face, which deviates from one side of the substrate, of the GaN two-dimensional growth layer; and the thickness of the SiN<x> layer is lower than that of an atomic layer. A schottky diode terminal device which is manufactured by the epitaxial wafer provided by the invention has relatively low electric leakage and long service life; and meanwhile, the current density is reduced, and the reverse breakdown voltage of the device is improved.

Description

technical field [0001] The invention relates to the technical field of semiconductor manufacturing, in particular to an epitaxial wafer for a Schottky diode and a preparation method thereof. Background technique [0002] Schottky diodes are made using the metal-semiconductor contact principle formed by the contact between metal and semiconductor. It is a hot carrier diode with low forward voltage and ultra-high speed. It is widely used in high frequency and high current , Low-voltage rectifier circuits, microwave electronic mixing circuits, detection circuits, high-frequency digital logic circuits, and AC-DC conversion systems are common discrete devices in electronic devices. In the prior art, Schottky diodes generally use epitaxial wafers as their semiconductor components. There are mainly three kinds of substrates used for epitaxial wafers of GaN Schottky diodes, namely sapphire substrates, silicon substrates and silicon carbide substrates. Among them, since silicon car...

AI Technical Summary

Problems solved by technology

Due to the high dislocation density of the flat sapphire substrate commonly used in the prior art, the diode electronic devices made of it have high leakage current, easy breakdown, and low crystal quality

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