Heterojunction solar cell and preparation method thereof

A solar cell and heterojunction technology, applied in the field of solar cells, can solve problems such as lowering the conversion efficiency of solar cells, being susceptible to the effects of the external environment, and reducing the performance of solar cells, so as to save collector materials, reduce material costs, and improve The effect of the fill factor

A solar cell and heterojunction technology, applied in the field of solar cells, can solve problems such as lowering the conversion efficiency of solar cells, being susceptible to the effects of the external environment, and reducing the performance of solar cells, so as to save collector materials, reduce material costs, and improve The effect of the fill factor

CN106098801AInactive Publication Date: 2016-11-09盐城普兰特新能源有限公司
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  • Heterojunction solar cell and preparation method thereof
  • Heterojunction solar cell and preparation method thereof
  • Heterojunction solar cell and preparation method thereof

Examples

Experimental program
Comparison scheme
Effect test

preparation example Construction

[0051] The preparation method includes: preparing a substrate 1; depositing a first intrinsic amorphous layer 2 on the light-receiving surface of the substrate 1; depositing a second intrinsic amorphous layer 5 on the back of the substrate 1; A first doped layer 3 is deposited on the first intrinsic amorphous layer 2; a second doped layer 6 is deposited on the second intrinsic amorphous layer 5; a first doped layer is deposited on the first doped layer 3. A transparent conductive layer 4; depositing a second transparent conductive layer 7 on the second doped layer 6; depositing a laminated structure on the second transparent conductive layer 7, the laminated structure includes sequentially laminated first A metal nitride film layer 10, a metal film layer 11 and a second metal nitride film layer 12, the first metal nitride film layer 10 is in direct contact with the second transparent conductive layer 7, between the first transparent conductive layer 4 and The second metal nitr...

Embodiment 1

[0056] Prepare an N-type monocrystalline silicon wafer 1 with a thickness of 200um, and then sequentially deposit 10nm intrinsic amorphous silicon film layers on the light-receiving surface of the N-type monocrystalline silicon wafer 1 as the first intrinsic amorphous layer 2 and A 25nm p-type amorphous silicon film layer is used as the first doped layer 3; then a 10nm intrinsic amorphous silicon film layer is sequentially deposited on the back of the n-type single crystal silicon wafer 1 by PECVD method as the second intrinsic amorphous silicon film layer. The n-type amorphous silicon film layer of layer 5 and 40nm is used as the second doped layer 6; Then adopts the magnetron sputtering method to deposit the ITO film layer of 100nm on the p-type amorphous silicon film layer 3 as the first transparent conductive layer 4 , then adopt magnetron sputtering method to deposit 100nm ITO film layer on n-type amorphous silicon film layer 6 as the second transparent conductive layer 7;...

Embodiment 2

[0058] Prepare an N-type monocrystalline silicon wafer 1 with a thickness of 120 μm, and then sequentially deposit 10 nm intrinsic amorphous silicon film layers on the light-receiving surface of the N-type monocrystalline silicon wafer 1 as the first intrinsic amorphous layer 2 and A 20nm p-type amorphous silicon film layer is used as the first doped layer 3; then a 10nm intrinsic amorphous silicon film layer is sequentially deposited on the back of the n-type single crystal silicon wafer 1 by PECVD method as the second intrinsic amorphous silicon film layer. The n-type amorphous silicon film layer of layer 5 and 35nm is used as the second doped layer 6; then adopts the magnetron sputtering method to deposit the ITO film layer of 100nm on the p-type amorphous silicon film layer 3 as the first transparent conductive layer 4 , then adopt magnetron sputtering method to deposit 80nm ITO film layer on n-type amorphous silicon film layer 6 as the second transparent conductive layer 7...

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Abstract

The invention relates to the field of solar cells. The invention discloses a heterojunction solar cell. The heterojunction solar cell comprises a substrate, a first intrinsic amorphous layer, a second intrinsic amorphous layer, a first doping layer, a second doping layer, a first transparent conducting layer, a second transparent conducting layer and a laminated structure, wherein the laminated structure comprises a first metal nitride film layer, a metal film layer and a second metal nitride film layer which are laminated in sequence; and the laminated structure is arranged on the transparent conducting layer. The invention also discloses a preparation method of the heterojunction solar cell. According to the heterojunction solar cell and the preparation method thereof, the contact resistance of the electrode on the back face of the cell can be reduced, and the fill factor of the cell is promoted; and moreover, the back face has an extremely good reflection function, and more light can be absorbed by the substrate, so that a thinner substrate can be used, the substrate material is saved, and the cost is reduced.

Description

technical field [0001] The invention belongs to the field of solar cells, and in particular relates to a heterojunction solar cell and a preparation method thereof. Background technique [0002] Solar cells can directly convert sunlight into electricity, so as a new energy source, more and more countries are paying attention. [0003] Heterojunction with Intrinsic Thin layer solar cell, referred to as HIT solar cell, was first invented by Sanyo Corporation. It is an amorphous silicon / crystalline silicon heterojunction solar cell, which is made of a crystalline silicon substrate and an amorphous silicon film. hybrid solar cells. Due to its high photoelectric conversion efficiency, low temperature coefficient and preparation technology under relatively low temperature conditions, HIT solar cells have become one of the key directions of research and development in the photovoltaic industry in recent years. At present, the efficiency of HIT solar cells industrialized by Japan'...

Claims

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Application Information

Patent Timeline
09 Nov 2016
Publication
CN106098801A
IPC
H01L31/02; H01L31/0216; H01L31/0232; H01L31/076; H01L31/20
CPC
H01L31/02008; H01L31/02167; H01L31/02327; H01L31/076; H01L31/202; Y02E10/548; Y02P70/50
Inventors
李艺明; 邓国云