Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Method of optimizing organic thin film transistor insulating layer by bi-crosslinking reaction

An organic thin film and insulating layer technology is applied in the field of optimizing the insulating layer of organic thin film transistors, which can solve the problems of easy aging, non-compactness, and influence on device performance, and achieve the effects of low cost, good optoelectronic performance and simple operation.

Active Publication Date: 2016-11-16
FUZHOU UNIV
View PDF4 Cites 5 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Although organic insulating materials have many advantages, there are disadvantages such as easy aging and non-denseness of organic insulating materials, which affect the performance of devices.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Method of optimizing organic thin film transistor insulating layer by bi-crosslinking reaction
  • Method of optimizing organic thin film transistor insulating layer by bi-crosslinking reaction
  • Method of optimizing organic thin film transistor insulating layer by bi-crosslinking reaction

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0081] 1) Clean a P-type silicon wafer with a size of 1.5cm×2cm with acetone, isopropanol, chloroform, and distilled water (three times), and then dry it with nitrogen to obtain a clean silicon wafer as a gate.

[0082] 2) Use a syringe with a 0.22um filter plug to spread the 150mg / ml PVP solution over the silicon wafer, and then use a speed of 2000rpm (30s) to make the PVP solution form a uniform film on the silicon wafer, and then move the silicon wafer into the glove box for further processing. A 850nm insulating layer film was prepared by cross-linking reaction at 120°C (2h).

[0083] 3) The semiconductor polymer PDVT-8 was dissolved in chloroform at 5 mg / ml, and the PDVT-8 solution was spin-coated at 1000 rpm (60 s) to prepare the active layer, and then heated at 150 °C for 10 min.

[0084] 4) Finally, a 50nm-thick source-drain electrode with a channel length of 30um and a width of 1mm was evaporated on the silicon wafer obtained in step 5) by thermal evaporation using a ...

Embodiment 2

[0086] 1) Clean a P-type silicon wafer with a size of 1.5cm×2cm with acetone, isopropanol, chloroform, and distilled water (three times), and then dry it with nitrogen to obtain a clean silicon wafer as a gate.

[0087] 2) Use a syringe with a 0.22um filter plug to spread the 150mg / ml PVP solution over the silicon wafer, and then use a speed of 2000rpm (30s) to make the PVP solution form a uniform film on the silicon wafer, and then move the silicon wafer into the glove box for further processing. A 850nm insulating layer film was prepared by cross-linking reaction at 120°C (2h).

[0088] 3) Drop the methacrylic acid (MAA) small molecule monomer solution on the sample that has prepared the insulating layer film, among which, MAA liquid small molecule monomer: EGDMA: photoinitiator Irgacure 651=96:3:1, static After 2s, use 5000rpm (60) to remove excess small molecule monomer solution on the surface of the insulating layer.

[0089] 4) Prepare a 40w-BL Philips UV lamp, and place ...

Embodiment 3

[0094] 1) A P-type silicon wafer with a size of 1.5cm×2cm was blown dry with acetone, isopropanol, chloroform, distilled water (three times) and nitrogen to obtain a clean silicon wafer as a gate.

[0095] 2) Use a syringe with a 0.22um filter plug to spread the 150mg / ml PVP solution over the silicon wafer, and then use a speed of 2000rpm (30s) to make the PVP solution form a uniform film on the silicon wafer, and then move the silicon wafer into the glove box for further processing. A 850nm insulating layer film was prepared by cross-linking reaction at 120°C (2h).

[0096] 3) Drip the small molecule monomer solution of methyl methacrylate (MMA) on the sample that has prepared the insulating layer film, among which, MMA liquid small molecule monomer: EGDMA: photoinitiator Irgacure 651=96:3:1 After standing for 2s, use 5000rpm (60s) to remove excess small molecule monomer solution on the surface of the insulating layer.

[0097] 4) Prepare a 40w-BL Philips UV lamp, and place ...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The present invention relates to a method of optimizing an organic thin film transistor insulating layer by bi-crosslinking reaction. The method is characterized in that an organic thin film transistor is provided and comprises a substrate, an insulating layer, an active layer and a source-drain electrode which are arranged orderly from bottom to top; the insulating layer adopts a solution method, and after an insulating layer film is formed on the grid of the substrate by utilizing a spin coating technology or a blade coating technology, a liquid small organic molecule monomer solution permeates the insulating layer and is carried out the UV light processing, so that the small molecule monomers in the small molecule monomer solution are aggregated, cured and embedded in a netted structure of the insulating layer to modify the surface of the insulating layer. An insulating layer surface modification method provided by the present invention is simple and convenient in operation method and obvious in modification effect, and enables a leakage current in the organic thin film transistor to be reduced effectively and the migration rate of the organic thin film transistor to be improved.

Description

technical field [0001] The invention relates to the field of electro-optical materials, in particular to a method for optimizing the insulating layer of an organic thin film transistor by injecting an interpenetrating network polymer into the surface. Background technique [0002] As an important part of the organic thin film transistor, the insulating layer mainly plays the role of isolating the gate and the active layer or the source and drain electrodes. The layer forms a good contact surface and cannot affect the growth of the active layer film. Both inorganic materials and organic materials can be used to prepare insulating layers in organic thin film transistors. The most commonly used of these is SiO 2 , it has good insulating properties, but it cannot form a good contact interface with the organic film, and it needs to be modified when preparing the active layer on it. In addition, the preparation of SiO 2 Generally, the thermal growth method is adopted, and the p...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): H01L51/05H01L51/40
CPCH10K10/478H10K10/471
Inventor 陈惠鹏郭太良张军张国成陈赐海杨辉煌
Owner FUZHOU UNIV
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com