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A kind of growth method of Gan-based light-emitting diode epitaxial wafer

A light-emitting diode and growth method technology, which is applied in the growth field of GaN-based light-emitting diode epitaxial wafers, can solve the problems of high warpage and fragmentation rate, and achieve the effects of improving warpage, improving crystal quality, and improving lattice mismatch

Active Publication Date: 2018-11-06
HC SEMITEK ZHEJIANG CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0006] In order to solve the problems of high warpage and fragmentation rate in the prior art, an embodiment of the present invention provides a method for growing GaN-based light-emitting diode epitaxial wafers

Method used

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  • A kind of growth method of Gan-based light-emitting diode epitaxial wafer
  • A kind of growth method of Gan-based light-emitting diode epitaxial wafer
  • A kind of growth method of Gan-based light-emitting diode epitaxial wafer

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Embodiment 1

[0048] An embodiment of the present invention provides a method for growing a GaN-based light-emitting diode epitaxial wafer, see figure 1 , the growth method includes:

[0049] Step 101: heat-treating the substrate in a pure hydrogen atmosphere by raising the temperature.

[0050] Optionally, this step 101 may include:

[0051] The temperature is raised in multiple stages, and then the substrate is heat-treated in a pure hydrogen atmosphere.

[0052] In this embodiment, the temperature in the same stage is constant, and the temperature in different stages increases with time.

[0053] Optionally, the rate of increase of temperature in different stages can be kept constant (such as Figure 2a shown), gradually decreasing (such as Figure 2b shown) or gradually increased (as Figure 2c shown).

[0054] Optionally, the temperature difference between two adjacent stages can be set according to the requirements of epitaxial growth, so as to select an optimal value matching t...

Embodiment 2

[0095] An embodiment of the present invention provides a method for growing a GaN-based light-emitting diode epitaxial wafer, and the growth method provided in this embodiment is a specific realization of the growth method provided in Embodiment 1. In an embodiment, with high-purity hydrogen (H 2 ) or nitrogen (N 2 ) as carrier gas, trimethylgallium (TMGa), trimethylaluminum (TMAl), trimethylindium (TMIn) and ammonia (NH 3 ) respectively as sources of Ga, Al, In, and N, using silane (SiH 4 ), Magnesium (Cp 2 Mg) as N-type and P-type dopants respectively. see image 3 , the growth method includes:

[0096] Step 201: The temperature of the substrate is first raised to 500°C, then raised to 800°C and stabilized for 30s, then raised to 1000°C and stabilized for 30s, then raised to 1230°C and stabilized for 10 minutes, and then heat-treated in a pure hydrogen atmosphere.

[0097] Step 202: Lower the temperature to 540° C., and deposit a GaN layer with a thickness of 30 nm to ...

Embodiment 3

[0110] An embodiment of the present invention provides a method for preparing a light-emitting diode epitaxial wafer. The difference between the preparation method provided in this embodiment and the method provided in Embodiment 2 is that the Al composition of the first AlGaN layer in the transition layer is 20%, the Al composition of the second AlGaN layer starts from 40%, and the first layer is reduced by 5% (such as Figure 5 shown).

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Abstract

The invention discloses a growth method for a GaN-based light emitting diode epitaxial wafer, and belongs to the technical field of a semiconductor. The growth method comprises the following steps of rising a temperature for thermal processing on a substrate in a pure hydrogen atmosphere; reducing the temperature for depositing a buffer layer; performing temperature rising of a plurality of stages, and growing a transition layer, wherein the transition layer is a multi-layer AlGaN layer converted to three-dimensional growth from two-dimensional growth and then converted to two-dimensional growth, the multi-layer AlGaN layer comprises first AlGaN layers and second AlGaN layers which are alternatively laminated, Al constituents of the first AlGaN layers and the second AlGaN layers are different, the temperature of the same stage is constant, and the temperatures of different states are risen with time passing; rising the temperature for depositing a non-doped GaN layer; growing an N-type layer; alternatively growing InGaN layers and GaN layers to form a multi-quantum well layer; growing a P-type electron baffler layer; growing a P-type layer; and growing a P-type contact layer. The growth method is suitably used for production of a large-size epitaxial layer.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to a method for growing GaN-based light-emitting diode epitaxial wafers. Background technique [0002] Light Emitting Diodes (LED for short) have the advantages of small size, colorful colors, and long service life. , toys and other fields. Group III nitrides represented by GaN are wide-bandgap semiconductors with direct band gaps, which have the advantages of high thermal conductivity, high luminous efficiency, stable physical and chemical properties, and the ability to achieve P-type or N-type doping, and the multi-element alloys of GaN The quantum well structure composed of InGaN and GaN can cover the entire visible light region, and has a high internal quantum efficiency, so GaN is an ideal material for making LEDs. [0003] With the continuous development of the economy and the continuous increase of labor costs in recent years, LED chip manufacturers have gradually de...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L33/00
CPCH01L33/0075
Inventor 杨兰万林胡加辉
Owner HC SEMITEK ZHEJIANG CO LTD
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