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A p-i-n power generation layer structure and preparation method thereof, light-transmitting solar cell and preparation method thereof

A power generation layer, P-I-N technology, applied in the field of solar cells, can solve the problems of poor light transmittance and low photoelectric conversion efficiency of silicon-based thin-film solar cells, and achieve the effects of suppressing the photodegradation effect, improving photoelectric conversion performance, and high conductivity

Active Publication Date: 2017-12-29
HEBEI UNIVERSITY
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] One of the purposes of the present invention is to provide a P-I-N power generation layer structure to solve the problems of poor light transmittance and low photoelectric conversion efficiency of silicon-based thin film solar cells

Method used

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  • A p-i-n power generation layer structure and preparation method thereof, light-transmitting solar cell and preparation method thereof

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Experimental program
Comparison scheme
Effect test

Embodiment 1

[0043] Embodiment 1: P-I-N power generation layer structure composed of nano-silicon-oxygen film material.

[0044] The P-I-N power generation layer structure composed of nano-silicon-oxygen film material of the present invention includes a P-type doped layer, an I-layer intrinsic absorption layer and an N-type doped layer.

[0045] The P-type doped layer is made of a P-type nc-SiOx:H thin film material, the energy band gap of the P-type nc-SiOx:H thin film material is 1.8eV~2.0eV, and the dark conductance is 1×10 -2 S / cm~5×10 -2 S / cm, the crystallization rate is 30%~40%, and the thickness of the thin film material is 15 nm~25nm.

[0046] Described 1 layer intrinsic absorbing layer is to use 1 layer nc-SiOx:H film material to make, and the energy bandgap of described 1 layer nc-SiOx:H film material is 1.5eV~2.0eV, photosensitivity is 1×10 2 ~5×10 2 , the crystallization rate is 30%~50%, and the thickness of the thin film material is 100nm~200nm.

[0047] The N-type doped...

Embodiment 2

[0048] Embodiment 2: A method for preparing a P-I-N power generation layer structure composed of nano-silicon-oxygen film materials.

[0049] The preparation method of the P-I-N power generation layer structure of the present invention comprises the following steps:

[0050] 1. After cleaning and preheating, the transparent insulating substrate with a transparent conductive film enters the deposition chamber of the PECVD equipment. The gas pressure in the deposition chamber is 300~2000 mTorr, and the deposition temperature is 150°C~300°C. The plasma energy density on the board is 5mW / cm 2 ~300mW / cm 2 .

[0051] 2. Fill the P-doped deposition chamber of the PECVD equipment with silane, carbon dioxide, hydrogen and trimethyl boron gas. The gas flow ratio is silane SiH 4 : carbon dioxide CO 2 : Hydrogen H 2 ︰Trimethylboron TMB is 1︰(1.7~2.7)︰240︰(0.1~0.6); the deposition time is 12 min~18min, thus making P-type nc-SiOx:H thin film material. Through the adjustment of deposit...

Embodiment 3

[0054] Embodiment 3: A light-transmitting solar cell with a P-I-N power generation layer structure composed of nano-silicon-oxygen film materials.

[0055] Such as figure 1 As shown, the light-transmitting solar cell of the present invention is composed of a transparent insulating substrate 11, an upper transparent conductive film 21, a P-type doped layer 31, a P-type buffer layer 41, an I-layer intrinsic absorption layer 32, an N-type buffer layer 42, and a N-type buffer layer. Type doped layer 33, lower transparent conductive film 22, metal film layer 23 and transparent insulating back plate 12 are sequentially stacked and combined to form a battery body with a single junction structure. Among them, the P-type doped layer 31, the I-layer intrinsic absorption layer 32 and the N-type doped layer 33 form a P-I-N power generation layer structure; the upper transparent conductive film 21 constitutes the front electrode of the light-transmitting solar cell; the lower transparent c...

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Abstract

The invention relates to a P-I-N power generating layer structure and a manufacturing method thereof, a light-penetrable solar cell and a manufacturing method thereof. A P-type doping layer, an I layer intrinsic absorption layer and an N -type doping layer of the P-I-N power generating layer structure are made of nano-SiOx thin film material which has the advantages of high conductivity, and high photosensitiveness and absorption factor. Modulation of the band-gap and the photoelectric properties of the thin film material can be realized by adjusting deposition parameters to obtain cells made of wide band-gap material. The introduction of oxygen bonds in the thin film material helps to improve the photoelectric conversion performance of the cell under a temperature near the actual use temperature. The light-penetrable solar cell made of the thin film material has high stability, the transmittance reaches 20% to 40%, photoelectric conversion efficiency reaches 5% to 7%, and the light attenuation is less than 6%. The light-penetrable solar cell is widely applicable to photovoltaic building integration, the photovoltaic light transmission windows and sunlight greenhouses.

Description

technical field [0001] The invention relates to a solar cell, in particular to a P-I-N power generation layer structure and a preparation method thereof, a light-transmitting solar cell and a preparation method thereof. Background technique [0002] Light-transmitting solar cells are mainly thin-film solar modules. Silicon-based thin-film solar cells occupy a certain market share in thin-film solar cells due to their advantages of low cost, low energy consumption, and large-area integration. The manufacturing process of silicon-based thin-film light-transmitting cells is mainly divided into two types. The first one is to adjust the spacing between sub-cells to achieve the light transmittance of the components through laser scribing, cell structure design and other technological means. Its advantages are flexible operation and The disadvantage is that the effective area of ​​the battery is lost, the conversion efficiency is low, and the production cost is increased; the seco...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L31/0288H01L31/075H01L31/20B82Y30/00
CPCB82Y30/00H01L31/0288H01L31/075H01L31/202Y02B10/10Y02E10/548Y02P70/50
Inventor 傅广生于威黄艳红李云路万兵杨彦斌焦玉骁
Owner HEBEI UNIVERSITY