A-axis oriented reinforced type AlN film and preparation method thereof

Abstract

The invention discloses an a-axis oriented reinforced type AlN film and a preparation method thereof, and belongs to the technical field of electronic information functional materials and elements. The preparation method includes the steps that an n-type Si(100) substrate is adopted and put into a magnetron sputtering system cavity to be subjected to vacuumizing treatment, different magnetron sputtering processes and annealing treatment are combined, an a-axis oriented AlN buffering layer is prepared firstly, and the AlN film is grown on the basis of the a-axis oriented AlN buffering layer in a preferred orientation mode; as the lattice matching degree of the AlN film and the AlN buffering layer is high, the growth quality of the AlN film is improved, the surface roughness of the AlN film is lowered, the piezoelectric effect of the AlN film is improved, and transmission loss of acoustic surface waves is lowered. The preparation method is easy to operate and implement in the preparing process, is environmentally friendly and saves energy, the raw materials are in abundant supply and low in price, the batch production process is controllable, batch production, application and popularization are facilitated, and the a-axis oriented reinforced type AlN film is suitable for manufacturing high-performance communication elements in the modern communication technology.

Description

Technical field [0001] The invention belongs to the technical field of electronic information functional materials and devices, and specifically relates to an a-axis orientation enhanced AlN film and a preparation method thereof, which can be used to make communication components such as resonators, transducers, piezoelectric sensors, etc. in modern communication technology . Background technique [0002] In recent years, the communication industry has developed rapidly. The frequency of communication systems and communication equipment is increasing, the integration level is getting higher and higher, and the size is decreasing. This puts forward higher requirements for filters used in communication equipment. However, the traditional dielectric filter is too large and the low-temperature co-fired ceramic filter has relatively poor filtering performance, which are difficult to meet the requirements of miniaturization, integration and high reliability of communication equipment. ...

AI Technical Summary

Problems solved by technology

For the surface acoustic wave crystal material with a low surface acoustic wave propagation speed, if it is used to make a 2.5GHz surface acoustic wave device, its IDT finger width d is generally less than 0.4 microns. The finger width d is less than 0.1 micron, approaching the limit of the current semiconductor industry level, resulting in severe finger amputation. Moreover, since the dense interdigitated metal fingers are arranged in parallel to form wiring capacitance, it is easy to conduct between the interdigitated fingers at high frequencies, which seriously restricts The further improvement of the frequency of the surface acoustic wave device

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