A-axis oriented reinforced type AlN film and preparation method thereof

An enhanced and oriented technology, applied in ion implantation plating, metal material coating process, coating, etc., can solve problems such as broken fingers, easy conduction, and frequency restriction of surface acoustic wave devices, achieving high yield, Strong reliability, the effect of strong product reliability

Inactive Publication Date: 2016-12-21
UNIV OF ELECTRONICS SCI & TECH OF CHINA
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

For the surface acoustic wave crystal material with a low surface acoustic wave propagation speed, if it is used to make a 2.5GHz surface acoustic wave device, its IDT finger width d is generally less than 0.4 microns. The finger width d is less than 0.1 micron, approaching the limit of the current semiconductor industry le...

Method used

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  • A-axis oriented reinforced type AlN film and preparation method thereof
  • A-axis oriented reinforced type AlN film and preparation method thereof
  • A-axis oriented reinforced type AlN film and preparation method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0034] A method for preparing a-axis orientation enhanced AlN film includes the following steps:

[0035] Before step A, the surface of the n-type Si (100) substrate is usually polished and cleaned;

[0036] Surface polishing treatment: polishing the surface of the n-type Si (100) substrate with diamond slurry. After observing the surface of the substrate without scratches with an optical microscope, the substrate is polished by the prior art chemical mechanical polishing method.

[0037] Cleaning treatment: First, put the n-type Si(100) substrate in acetone and ultrasonically treat it for about 10 minutes, clean it with deionized water, put it in ethanol for ultrasonic treatment for about 10 minutes, clean it with deionized water, and put it in. Ultrasonic treatment in ionized water for about 10 minutes, and finally blow dry with pure nitrogen.

[0038] Step A: Put the n-type Si (100) substrate into the chamber of the magnetron sputtering system for vacuum argon treatment;

[0039] Pu...

Embodiment 2

[0049] A method for preparing a-axis orientation enhanced AlN film includes the following steps:

[0050] Before step A, the surface of the n-type Si (100) substrate is usually polished and cleaned;

[0051] Surface polishing treatment: polishing the surface of the n-type Si (100) substrate with diamond slurry. After observing the surface of the substrate without scratches with an optical microscope, the substrate is polished by the prior art chemical mechanical polishing method.

[0052] Cleaning treatment: First, put the n-type Si(100) substrate in acetone and ultrasonically treat it for about 10 minutes, clean it with deionized water, put it in ethanol for ultrasonic treatment for about 10 minutes, clean it with deionized water, and put it in. Ultrasonic treatment in ionized water for about 10 minutes, and finally blow dry with pure nitrogen.

[0053] Step A: Put the n-type Si (100) substrate into the chamber of the magnetron sputtering system for vacuum argon treatment;

[0054] Pu...

Embodiment 3

[0064] A method for preparing a-axis orientation enhanced AlN film includes the following steps:

[0065] Before step A, the surface of the n-type Si (100) substrate is usually polished and cleaned;

[0066] Surface polishing treatment: polishing the surface of the n-type Si (100) substrate with diamond slurry. After observing the surface of the substrate without scratches with an optical microscope, the substrate is polished by the prior art chemical mechanical polishing method.

[0067] Cleaning treatment: First, put the n-type Si(100) substrate in acetone and ultrasonically treat it for about 10 minutes, clean it with deionized water, put it in ethanol for ultrasonic treatment for about 10 minutes, clean it with deionized water, and put it in. Ultrasonic treatment in ionized water for about 10 minutes, and finally blow dry with pure nitrogen.

[0068] Step A: Put the n-type Si (100) substrate into the chamber of the magnetron sputtering system for vacuum argon treatment;

[0069] Pu...

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Abstract

The invention discloses an a-axis oriented reinforced type AlN film and a preparation method thereof, and belongs to the technical field of electronic information functional materials and elements. The preparation method includes the steps that an n-type Si(100) substrate is adopted and put into a magnetron sputtering system cavity to be subjected to vacuumizing treatment, different magnetron sputtering processes and annealing treatment are combined, an a-axis oriented AlN buffering layer is prepared firstly, and the AlN film is grown on the basis of the a-axis oriented AlN buffering layer in a preferred orientation mode; as the lattice matching degree of the AlN film and the AlN buffering layer is high, the growth quality of the AlN film is improved, the surface roughness of the AlN film is lowered, the piezoelectric effect of the AlN film is improved, and transmission loss of acoustic surface waves is lowered. The preparation method is easy to operate and implement in the preparing process, is environmentally friendly and saves energy, the raw materials are in abundant supply and low in price, the batch production process is controllable, batch production, application and popularization are facilitated, and the a-axis oriented reinforced type AlN film is suitable for manufacturing high-performance communication elements in the modern communication technology.

Description

Technical field [0001] The invention belongs to the technical field of electronic information functional materials and devices, and specifically relates to an a-axis orientation enhanced AlN film and a preparation method thereof, which can be used to make communication components such as resonators, transducers, piezoelectric sensors, etc. in modern communication technology . Background technique [0002] In recent years, the communication industry has developed rapidly. The frequency of communication systems and communication equipment is increasing, the integration level is getting higher and higher, and the size is decreasing. This puts forward higher requirements for filters used in communication equipment. However, the traditional dielectric filter is too large and the low-temperature co-fired ceramic filter has relatively poor filtering performance, which are difficult to meet the requirements of miniaturization, integration and high reliability of communication equipment. ...

Claims

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Application Information

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IPC IPC(8): C23C14/06C23C14/35C23C14/02C23C14/58
CPCC23C14/024C23C14/0617C23C14/35C23C14/5806
Inventor 杨成韬牛东伟唐佳琳胡现伟泰智薇
Owner UNIV OF ELECTRONICS SCI & TECH OF CHINA
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