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CdTe solar cell manufacturing method capable of reducing defect density

A technology of solar cells and cadmium telluride, which is applied in sustainable manufacturing/processing, circuits, photovoltaic power generation, etc., can solve the problems of reducing the lifetime of unbalanced carriers and reducing the performance of solar cells, so as to improve photoelectric conversion efficiency and reduce Effect of improving defect density and battery performance

Inactive Publication Date: 2016-12-21
ZHONGSHAN RUIKE NEW ENERGY CO LTD
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Problems solved by technology

As a compound semiconductor material, cadmium telluride often contains high concentrations of defect states such as intrinsic defects and impurity defects. The most important intrinsic defects are cation vacancies, which are introduced into the deep main energy level and form carriers. Recombination center, reducing non-equilibrium carrier lifetime and reducing solar cell performance

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  • CdTe solar cell manufacturing method capable of reducing defect density

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Embodiment Construction

[0017] Such as figure 1 As shown, in order to compare the situation before and after the improvement of the present invention more specifically, the preparation method of the traditional cadmium telluride solar cell is introduced first. Firstly, 800nm ​​SnO2:F thin film 2 (FTO) is deposited on the glass substrate 1 by CVD method as the transparent front electrode of the battery. Deposit a 50-500nm n-type CdS window layer 3 on the SnO2:F film 2 by vapor transport method, the deposition conditions are pressure 10-1000pa, temperature 100°C-650°C; O2 concentration 0.01%-10%, and then deposit 1-8um p-type CdTe film 4; CdCl after spraying 0.5-100um on the surface of CdTe film 4 2 solution, and then annealed in the atmosphere at 100-500°C for 30 minutes, and etched the annealed cadmium telluride battery in a solution containing 0.1-1.5% nitric acid; then deposited a buffer layer 5 on the etched CdTe surface , depositing a layer of Mo / Al / Cr metal back electrode 6 on the buffer layer...

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Abstract

The invention discloses a CdTe solar cell manufacturing method capable of reducing defect density. The method comprises the following steps: (A) a substrate is provided; (B) a transparent conductive oxide thin film is deposited on the substrate; (C) a window layer CdS thin film is deposited; (D) an absorption layer CdTe thin film is deposited on the CdS thin film; (E) a CdCl2 solution is sprayed on the surface of the CdTe thin film, and then thermal treatment is carried out; (F) a solution containing nitric acid is used for etching the CdTe thin film after thermal treatment; and (G) PECVD plasma treatment is carried out on the etched CdTe thin film to passivate defects. According to the method of the invention, during the CdTe solar cell manufacturing process, plasma treatment is introduced to passivate the defects, the defect density of the CdTe thin film is effectively reduced, the material performance is improved, the photoelectric conversion efficiency of the CdTe thin film solar cell is further improved, and the cell performance is improved.

Description

technical field [0001] The invention relates to the technical field of photovoltaic solar cells, in particular to a method for preparing a cadmium telluride solar cell capable of reducing defect density. Background technique [0002] With the increasing shortage of energy, people pay more and more attention to the development and utilization of solar energy. There is an increasing demand for new solar cells with larger area, higher efficiency and lower production cost. In the field of photovoltaic cells, cadmium telluride (CdTe) thin-film solar cells have attracted widespread attention because of their inherent material properties, its development process, and the advantages of being convenient for large-area continuous production. Cadmium telluride (CdTe) is a typical polycrystalline material, it has an ideal band gap of 1.45-1.5eV, and is a semiconductor material with direct band gap, the absorption coefficient is 5×105cm -1 , so only a few microns of material can be use...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/0296H01L31/0445H01L31/18
CPCH01L31/0296H01L31/0445H01L31/1828H01L31/1876Y02E10/543Y02P70/50
Inventor 蓝仕虎何光俊陈金良齐鹏飞唐智勇
Owner ZHONGSHAN RUIKE NEW ENERGY CO LTD
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